Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract: Among other things, one or more image sensors and techniques for guiding light towards a photodiode are provided. An image sensor comprises a metal grid configured to direct light towards a corresponding photodiode and away from other photodiodes. The image sensor also comprises a dielectric grid and a filler grid over the metal grid to direct light towards the corresponding photodiode and away from other photodiodes, where the filler grid has a different refractive index than the dielectric grid. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. A filler grid is formed over the photodiode array, such as over a dielectric grid. The filler grid comprises one or more filler structures, such as a first filler structure that provides a light propagation path to a first photodiode that is primarily through the first filler structure. In this way, signal strength decay of light along the light propagation path before detection by the first photodiode is mitigated. The image sensor comprises a reflective layer that channels light towards corresponding photodiodes. For example, a first reflective layer portion guides light towards the first photodiode and away from a second photodiode. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.

Abstract: A bonding pad structure for an image sensor device and a method of fabrication thereof. The image sensor device has a radiation-sensor region including a substrate and a radiation detection device, and a bonding pad region including the bonding pad structure. The bonding pad structure includes: an interconnect layer; an interlayer dielectric layer (IDL), both layers extending from under the substrate into the bonding pad region; an isolation layer formed on IDL; a conductive pad having a planar portion and one or more bridging portions extending perpendicularly from the planar portion, through the IDL and isolation layers, and to the interconnect layer; and a plurality of non-conducting stress-releasing structures disposed between the isolation layer and the conductive pad in such a way to adjoin its planar and the bridging portions together for releasing potential pulling stress applied thereon and preventing a conductive pad peeling.