Patents by Inventor Chen-Hsun Du
Chen-Hsun Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10693030Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.Type: GrantFiled: January 15, 2018Date of Patent: June 23, 2020Assignee: Industrial Technology Research InstituteInventors: Chao-Cheng Lin, Chorng-Jye Huang, Chen-Cheng Lin, Chun-Heng Chen, Chen-Hsun Du, Chun-Ming Yeh, Jui-Chung Hsiao
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Publication number: 20190221701Abstract: A solar cell includes a photoelectric conversion layer, a doped layer, a first passivation layer, a first TCO layer, a front electrode and a back electrode. The doped layer is disposed on the front surface of the photoelectric conversion layer. The first passivation layer is disposed on the doped layer, wherein the first passivation layer has a plurality of openings exposing a portion of the doped layer. The first TCO layer is disposed on the first passivation layer and in the openings, and directly contacts the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first TCO layer is between 0.01 and 0.5. The front electrode is disposed on the first TCO layer. The back electrode is disposed on the back surface of the photoelectric conversion layer.Type: ApplicationFiled: January 15, 2018Publication date: July 18, 2019Applicant: Industrial Technology Research InstituteInventors: Chao-Cheng Lin, Chorng-Jye Huang, Chen-Cheng Lin, Chun-Heng Chen, Chen-Hsun Du, Chun-Ming Yeh, Jui-Chung Hsiao
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Patent number: 10312384Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.Type: GrantFiled: November 15, 2016Date of Patent: June 4, 2019Assignee: Industrial Technology Research InstituteInventors: Chao-Cheng Lin, Chien-Kai Peng, Chen-Cheng Lin, Chen-Hsun Du, Chorng-Jye Huang, Chun-Ming Yeh
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Publication number: 20190131472Abstract: A solar cell includes a silicon substrate, a passivation structure, and a metal electrode. The passivation structure is disposed on a surface of the silicon substrate, and the passivation structure includes a tunneling layer and a doped polysilicon layer. The tunneling layer is disposed on the surface of the silicon substrate. The doped polysilicon layer is disposed on the tunneling layer and includes a first region and a second region having different thicknesses from each other, and the thickness of the first region is greater than that of the second region, wherein the thickness of the first region is between 50 nm and 500 nm, and the thickness of the second region is greater than 0 and equal to or less than 250 nm. The metal electrode is disposed on the first region of the doped polysilicon layer.Type: ApplicationFiled: December 11, 2017Publication date: May 2, 2019Applicant: Industrial Technology Research InstituteInventors: Jui-Chung Hsiao, Chun-Ming Yeh, Chao-Cheng Lin, Chorng-Jye Huang, Chen-Hsun Du, Chun-Heng Chen
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Publication number: 20180114871Abstract: A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.Type: ApplicationFiled: November 15, 2016Publication date: April 26, 2018Applicant: Industrial Technology Research InstituteInventors: Chao-Cheng Lin, Chien-Kai Peng, Chen-Cheng Lin, Chen-Hsun Du, Chorng-Jye Huang, Chun-Ming Yeh
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Patent number: 8895347Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.Type: GrantFiled: April 24, 2013Date of Patent: November 25, 2014Assignee: Industrial Technology Research InstituteInventors: Teng-Yu Wang, Chien-Hsun Chen, Chen-Hsun Du, Chung-Yuan Kung
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Publication number: 20140224313Abstract: A silicon solar cell structure includes a silicon substrate, a phosphorus diffusion doping layer within a surface of the silicon substrate, a passivation layer on the surface of the silicon substrate, a phosphorous-containing oxide layer between the passivation layer and the phosphorus diffusion doping layer within the silicon substrate, and an electrode on the surface of the silicon substrate through the passivation layer and the phosphorous-containing oxide layer.Type: ApplicationFiled: July 11, 2013Publication date: August 14, 2014Inventors: Der-Chin Wu, Li-Yu Li, Chen-Hsun Du, Bing-Cyun Chen
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Publication number: 20140083502Abstract: Provided is a solar cell including a substrate of a first conductivity type, a first electrode, a dielectric layer, a region of a second conductivity type, and a second electrode. The substrate of the first conductivity type has a front surface and a back surface opposite to each other. The first electrode is disposed on the front surface. The dielectric layer has charges. The dielectric layer is disposed on the front surface and positioned at both sides of the first electrode. The region of the second conductivity type is disposed between the substrate of the first conductivity type and the first electrode, wherein the region of the second conductivity type is disposed only below the first electrode. The second electrode is disposed on the back surface.Type: ApplicationFiled: December 26, 2012Publication date: March 27, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Der-Chin Wu, Chen-Hsun Du
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Patent number: 8664520Abstract: Provided is an electrode of a solar cell including a first electrode layer, a photoelectric conversion layer, an antireflective layer, and a second electrode layer. The first electrode layer is disposed on the photoelectric conversion layer. The antireflective layer is disposed on the photoelectric conversion layer to cover the first electrode layer. The second electrode layer is disposed on the antireflective layer and electrically connected to the first electrode layer, wherein a material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during a sintering process, and at least a material of the second electrode layer reacts with the antireflective layer during the sintering process.Type: GrantFiled: June 3, 2013Date of Patent: March 4, 2014Assignee: Industrial Technology Research InstituteInventors: Chen-Hsun Du, Shih-Peng Hsu, Han-Chang Liu
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Patent number: 8609456Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.Type: GrantFiled: September 9, 2012Date of Patent: December 17, 2013Assignee: Industrial Technology Research InstituteInventors: Teng-Yu Wang, Chien-Hsun Chen, Chen-Hsun Du, Chung-Yuan Kung
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Publication number: 20130269774Abstract: Provided is an electrode of a solar cell including a first electrode layer, a photoelectric conversion layer, an antireflective layer, and a second electrode layer. The first electrode layer is disposed on the photoelectric conversion layer. The antireflective layer is disposed on the photoelectric conversion layer to cover the first electrode layer. The second electrode layer is disposed on the antireflective layer and electrically connected to the first electrode layer, wherein a material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during a sintering process, and at least a material of the second electrode layer reacts with the antireflective layer during the sintering process.Type: ApplicationFiled: June 3, 2013Publication date: October 17, 2013Inventors: Chen-Hsun Du, Shih-Peng Hsu, Han-Chang Liu
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Patent number: 8536447Abstract: A fabricating method of an electrode of a solar cell includes forming a first electrode layer on a photoelectric conversion layer, forming an antireflective layer on the photoelectric conversion layer to cover the first electrode layer, forming a second electrode layer on the antireflective layer, and performing a sintering process. A material of the first electrode layer does not react with the photoelectric conversion layer and the antireflective layer during the sintering process, while at least a material of the second electrode layer reacts with the antireflective layer during the sintering process. The sintering process is performed, such that the second electrode layer reacts with the antireflective layer, and the second electrode layer penetrates the antireflective layer to electrically connect the first electrode layer.Type: GrantFiled: March 26, 2009Date of Patent: September 17, 2013Assignee: Industrial Technology Research InstituteInventors: Chen-Hsun Du, Shih-Peng Hsu, Han-Chang Liu
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Publication number: 20130237005Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process or a low temperature process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.Type: ApplicationFiled: April 24, 2013Publication date: September 12, 2013Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Teng-Yu WANG, Chien-Hsun CHEN, Chen-Hsun DU, Chung-Yuan KUNG
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Publication number: 20130217171Abstract: The disclosure provides a method for fabricating a semiconductor layer having a textured surface, including: (a) providing a textured substrate; (b) forming at least one semiconductor layer on the textured substrate; (c) forming a metal layer on the semiconductor layer; and (d) conducting a thermal process to the textured substrate, the semiconductor layer and the metal layer, wherein the semiconductor layer is separated from the textured substrate by the thermal process to obtain the semiconductor layer having the metal layer and a textured surface.Type: ApplicationFiled: September 9, 2012Publication date: August 22, 2013Inventors: Teng-Yu WANG, Chien-Hsun CHEN, Chen-Hsun DU, Chung-Yuan KUNG
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Publication number: 20120138137Abstract: The invention provides a solar cell which includes a solar cell, comprising: a first conductivity type semiconductor substrate, wherein the first conductivity type semiconductor substrate comprises a light receiving surface, a non-light receiving surface and a plurality of through holes extending from the light receiving surface to the non-light receiving surface; a second conductivity type semiconductor layer formed on the non-light receiving surface and extended into the first conductivity type semiconductor substrate, wherein the second conductivity type is opposite to the first conductivity type; a first electrode layer formed on the second conductivity type semiconductor layer; and a second electrode layer formed on the light receiving surface and extended to the non-light receiving surface by the through hole.Type: ApplicationFiled: September 12, 2011Publication date: June 7, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Bing-Cyun Chen, Wei-Chih Hsu, Wei-Lun Chang, Chen-Hsun Du
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Patent number: 8173035Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.Type: GrantFiled: February 16, 2009Date of Patent: May 8, 2012Assignee: Industrial Technology Research InstituteInventors: Ching-Hsi Lin, Chen-Hsun Du, Chung-Wen Lan
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Publication number: 20110139250Abstract: A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.Type: ApplicationFiled: May 27, 2010Publication date: June 16, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Chen-Hsun Du, Wen-Ching Sun, Wei-Lun Chang
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Publication number: 20110120548Abstract: A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage.Type: ApplicationFiled: November 19, 2010Publication date: May 26, 2011Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Bing-Cyun CHEN, Ching-Hsi LIN, Chen-Hsun DU, Chung-Wen LAN
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Patent number: 7759258Abstract: A surface texturization process for a silicon wafer, which is applied to a method for making a solar cell, is provided. The surface texturization process substantially comprises: 1) providing an acidic mixed solution; 2) immersing the silicon wafer in the acidic mixed solution; and 3) etching the acidic mixed solution for a predetermined time section. The mixed acidic solution includes nitric acid and ammonium fluoride and a predetermined mixture selecting from the group consisting of phosphoric acid, sulfuric acid or acetic acid.Type: GrantFiled: December 29, 2005Date of Patent: July 20, 2010Assignee: Industrial Technology Research InstituteInventor: Chen-Hsun Du
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Publication number: 20100147798Abstract: A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate.Type: ApplicationFiled: February 16, 2009Publication date: June 17, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ching-Hsi Lin, Chen-Hsun Du, Chung-Wen Lan