Abstract: A semiconductor structure includes a metal gate structure including a gate dielectric layer and a gate electrode, a conductive layer disposed on the gate electrode, and a gate contact disposed on the conductive layer. The conductive layer extends from a position below a top surface of the metal gate structure to a position above the top surface of the metal gate structure. The gate electrode includes at least a first metal, and the conductive layer includes at least the first metal and a second metal different from the first metal. Laterally the conductive layer is fully between opposing sidewalls of the metal gate structure.

Abstract: A method for preparing a multi-substituted acrylic acid compound includes steps as follow. A reaction solution is provided, wherein the reaction solution includes an organometallic reagent, a nickel-containing metal catalyst, a catalyst ligand, a first solvent, and the organometallic reagent is a Grignard reagent or a Gilman reagent. An addition step is conducted, wherein an alkyne compound is mixed with the reaction solution so as to undergo an addition reaction, thus an intermediate solution is obtained. A substitution step is conducted, wherein a carbon dioxide is introduced into the intermediate solution so as to obtain the multi-substituted acrylic acid compound.

Abstract: A carrier generation material is provided, which has a chemical structure of: wherein R1 is hydrogen or alkyl group; each of R2 is independently hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; each of R3 is independently hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R4 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R5 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R6 is ?O, ?NH, or malononitrile group, and R7 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group.

Abstract: A carrier generation material is provided, which has a chemical structure of: wherein R1 is hydrogen or alkyl group; each of R2 is independently hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; each of R3 is independently hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R4 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R5 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group; R6 is ?O, ?NH, or malononitrile group, and R7 is hydrogen, halogen, —CN, —CF3, —NO2, or alkyl group.