Abstract: A system for improving reliability of a memory device includes one or more memory banks, each of which has one or more regular memory cell rows and one or more redundant memory cell rows. At least one built-in-self-test (BIST) unit is coupled to the memory banks for testing the redundant memory cell rows to determine their respective quality standards, and testing the regular memory cell rows to identify the regular memory cell row that fails to pass a predetermined quality standard. At least one built-in-self-repair (BISR) unit is coupled to the BIST unit for replacing the failed regular memory cell row with the redundant memory cell row having a quality standard equal to or higher than the predetermined quality standard. The BIST unit repeatedly tests the regular memory cell rows a number of times, with each time applying a different quality standard.

Abstract: A method and system is presented for measuring a data access time of an embedded macro module in an integrated circuit. A single external test signal is inputted into the embedded macro module for enabling a data input therein and extracting a data output therefrom. A pulse width of the single external test signal is incrementally increased until a latch of the data output is observed. Then, the data access time is obtained, as its substantially equals a time interval of the increased pulse width.

Abstract: A memory cell for a static random access memory (SRAM) is disclosed that can be programmed to have a one-bit cell or a multi-bit cell (i.e, including two or more latches) according to a desired amount of cell current. For lower current needs, the memory cell can incorporate a single bit-element, while for higher current needs the memory cell can incorporate two or more bit-elements. An exemplary static random access memory device includes a memory cell having one or more bit-elements, such as bistable latches. Access devices, such as pass transistors, are coupled between each of the bit-elements and a bit line. A word line is coupled to the control terminal of each of the pass transistors for controlling communication between the bit-elements and the bit line.

Abstract: A method for making a semiconductor device having a fuse window above a substrate is disclosed. The semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a drain is connected to the second end of the fuse, a gate for receiving an input signal, and a source is connected to a second voltage. A second transistor having a drain is connected to the second end of the fuse, a gate, and a source is connected to the second voltage. A first diode having an anode and a cathode, the anode of the first diode is connected to the second voltage and the cathode of the first diode is connected to the second end of the fuse. A second diode having an anode and a cathode, the anode of the second diode is connected to the second end of the fuse and the cathode of the second diode is connected to the first voltage.

Abstract: This invention provides a circuit and a method for re-configuring fuse sets for memory cell array redundancy repair. In addition this invention relates to the use of fuse sets and spare row and column lines in the memory array to repair memory cell defects. Each fuse set can be used for either a row or a column, as needed, during a repair of the memory array. This allows the fuse sets to be allocated freely according to the process defects distribution on the chip and wafer. This results in higher repair efficiency and increased wafer yield.

Abstract: A semiconductor device having a fuse window above a substrate, the semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a drain is connected to the second end of the fuse, a gate for receiving an input signal, and a source is connected to a second voltage. A second transistor having a drain is connected to the second end of the fuse, a gate, and a source is connected to the second voltage. A first diode having an anode and a cathode, the anode of the first diode is connected to the second voltage and the cathode of the first diode is connected to the second end of the fuse.

Abstract: A method and system is presented for measuring a data access time of an embedded macro module in an integrated circuit. A single external test signal is inputted into the embedded macro module for enabling a data input therein and extracting a data output therefrom. A pulse width of the single external test signal is incrementally increased until a latch of the data output is observed. Then, the data access time is obtained, as its substantially equals a time interval of the increased pulse width.

Abstract: A memory cell for a static random access memory (SRAM) is disclosed that can be programmed to have a one-bit cell or a multi-bit cell (i.e., including two or more latches) according to a desired amount of cell current. For lower current needs, the memory cell can incorporate a single bit-element, while for higher current needs the memory cell can incorporate two or more bit-elements. An exemplary static random access memory device includes a memory cell having one or more bit-elements, such as bistable latches. Access devices, such as pass transistors, are coupled between each of the bit-elements and a bit line. A word line is coupled to the control terminal of each of the pass transistors for controlling communication between the bit-elements and the bit line.

Abstract: A fuse state detection circuit (300) has a reference circuit part (302, 302?) and a fuse detection circuit part (308, 308?), the reference circuit part (302, 302?) having a fuse (304, 304?) identical to a fuse (306, 306?) under detection. A reference voltage is between a voltage of a blown fuse (306, 306?) under detection and a voltage of an un-blown fuse (306, 306?) under detection, thus distinguishing a blown state of the fuse (306, 306?) under detection from an un-blown state of the fuse (306, 306?) under detection.

Abstract: A semiconductor device having a fuse window above a substrate, the semiconductor device has at least one fuse protection circuit located under the fuse window. The fuse protection circuit includes a fuse having a first end connected to a first voltage and a second end. A first transistor having a drain is connected to the second end of the fuse, a gate for receiving an input signal, and a source is connected to a second voltage. A second transistor having a drain is connected to the second end of the fuse, a gate, and a source is connected to the second voltage. A first diode having an anode and a cathode, the anode of the first diode is connected to the second voltage and the cathode of the first diode is connected to the second end of the fuse. A second diode having an anode and a cathode, the anode of the second diode is connected to the second end of the fuse and the cathode of the second diode is connected to the first voltage.

Abstract: A fuse state detection circuit (300) has a reference circuit part (302, 302?) and a fuse detection circuit part (308, 308?), the reference circuit part (302, 302?) having a fuse (304, 304?) identical to a fuse (306, 306?) under detection. A reference voltage is between a voltage of a blown fuse (306, 306?) under detection and a voltage of an un-blown fuse (306, 306?) under detection, thus distinguishing a blown state of the fuse (306, 306?) under detection from an un-blown state of the fuse (306, 306?) under detection.

Abstract: A process of making environmentally friendly joss-sticks including grinding high-grade carbon materials into powder and mixing the carbon powder with a gum producing powder at a suitable proportion to form a gum-carbon powder mixture; adding a suitable amount of incense to the gum-carbon powder mixture; soaking the bamboo sticks in water and dipping them in the gum producing powder; and soaking the bamboo sticks in water again and dipping them in the gum-carbon powder mixture. The bamboo sticks may further be soaked in water and dipped in a powdered pigment after being wrapped by the gum-carbon powder mixture.