Patents by Inventor Chen-Hwa Yu

Chen-Hwa Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6423640
    Abstract: A method for planarizing an oxide surface and removing dishing or erosion defect from a semiconductor wafer. An apparatus for carrying out the planarization process on a semiconductor wafer is further described. In the method, a wafer that has metal residues or dishing or erosion defect after a copper CMP process is first rotated at a rotational speed of at least 1000 RPM, while simultaneously a solvent/abrasive particles mixture is injected onto the rotating surface for a sufficient length of time until the metal residues, the dishing or erosion defect is removed. The rotational speed of the semiconductor wafer can be suitably controlled in a range between about 1000 RPM and about 10,000 RPM. For the removal of an oxide layer, a suitable solvent of diluted HF and a suitable abrasive particle such as aluminum oxide may be used.
    Type: Grant
    Filed: August 9, 2000
    Date of Patent: July 23, 2002
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tze-Liang Lee, Fan-Keng Yang, Chen-Hwa Yu
  • Patent number: 6136679
    Abstract: A new method of forming sub-micron features, such as a gate feature in particular, of less than 0.25 micrometers (.mu.m) to 0.18 .mu.m employing a micro-patterning process is disclosed. It is shown that the critical dimension width of a polysilicon gate can be controlled precisely by using very thin lithographic layers in a micro-patterning process. This is accomplished by forming a conductive layer over a gate oxide layer, followed by forming a planarization layer, an anti-reflective coating (ARC), and then, as a key feature, a very thin photoresist layer. A high resolution photoresist mask is next formed without the presence of any reflections in the photoresist layer due to the high optical absorptivity of the ARC, or BARC, at the bottom of the photoresist layer. Then, the precisely formed pattern is successively transferred, by etching, to BARC and to planarization layers which in turn form as second and first hard masks, respectively.
    Type: Grant
    Filed: March 5, 1999
    Date of Patent: October 24, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hwa Yu, Syun-Ming Jang