Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: An electronic apparatus with a two-way cable connection construction is provided. The electronic apparatus includes a casing kit and an electronic device. The casing kit includes a casing, a main circuit board and an auxiliary circuit board. The main circuit board and the auxiliary circuit board are disposed inside the casing. The auxiliary circuit board and the main circuit board are electrically connected to each other and non-coplanar with each other. When the electronic device is inserted into a mounting slot of the casing along a first direction, a mating electrical connector of the electronic device is connected to a first electrical connector of the auxiliary circuit board. When the electronic device is inserted into the mounting slot of the casing along a second direction opposite to the first direction, the mating electrical connector of the electronic device is connected to a second electrical connector of the auxiliary circuit board.

Abstract: A method includes forming a gate stack, growing a source/drain region on a side of the gate stack through epitaxy, depositing a contact etch stop layer (CESL) over the source/drain region, depositing an inter-layer dielectric over the CESL, etching the inter-layer dielectric and the CESL to form a contact opening, and etching the source/drain region so that the contact opening extends into the source/drain region. The method further includes depositing a metal layer extending into the contact opening. Horizontal portions, vertical portions, and corner portions of the metal layer have a substantially uniform thickness. An annealing process is performed to react the metal layer with the source/drain region to form a source/drain silicide region. The contact opening is filled to form a source/drain contact plug.

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A semiconductor structure and a method of forming the same are provided. An exemplary method of forming the semiconductor structure includes receiving a workpiece including a fin structure over a front side of a substrate, recessing a source region of the fin structure to form a source opening, extending the source opening into the substrate to form a plug opening, forming a semiconductor plug in the plug opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a first wet etching process to remove a portion of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize a rest portion of the substrate, performing a second wet etching process to remove the amorphized rest portion of the substrate to form a dielectric opening, depositing a dielectric layer in the dielectric opening, and replacing the semiconductor plug with a backside source contact.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

Abstract: A modified polyphenylene ether resin having a structure represented by [Formula 1] is provided.

Abstract: Cleaning tools for cleaning the pull cable of an ingot puller apparatus and methods for cleaning the pull cable are disclosed. The cleaning tool includes a chamber for receiving the pull cable. Pressurized fluid is discharged through one or more nozzles to detach debris from the pull cable. The fluid and debris are collected in an exhaust plenum of the cleaning tool and are expelled through an exhaust tube. The cleaning tool includes one or more guides that guide the cleaning tool in an upper segment of the ingot puller apparatus.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.

Abstract: The present invention provides four-particle electrophoretic displays with improved driving methods to achieve better color separation between adjacent pixel electrodes. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.

Abstract: The present invention provides four-particle electrophoretic displays with improved driving methods to achieve better color separation between adjacent pixel electrodes. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: A high electron mobility transistor comprising a nucleation layer having a first lattice constant, a back-barrier layer having a second lattice constant and a stress management layer having a third lattice constant which is larger than both first and second lattice constants. The stress management layer compensates some or all of the stress due to the lattice mismatch between the nucleation layer and back barrier layer so that the resulting structure experiences less bow and warp.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays. The driving methods improve the color state performance when a first pixel is displaying a mixed state of a first highly-charged particle and a second lower-charged particle of the opposite polarity, while a neighboring pixel is displaying a state of a second highly-charged particle having the opposite polarity to the first highly-charged particle. The particles can be, for example, all reflective or one type of particle can be partially light transmissive.

Abstract: An electrophoretic display and a driving method thereof are provided. The electrophoretic display includes a display panel and a driving circuit. The display panel includes an electrophoretic unit and a driving substrate. The electrophoretic unit includes a plurality of electrophoretic particles. The driving substrate is disposed below the electrophoretic unit. The driving circuit is coupled to the driving substrate. The driving circuit sequentially provides a first reset signal and a second reset signal to the driving substrate during a reset period to reset the plurality of electrophoretic particles. The first reset signal sequentially includes a first sub-balanced signal and a first sub-mixed signal. The second reset signal sequentially includes a second sub-balanced signal and a second sub-mixed signal.

Abstract: The present invention provides improved driving methods for four particle electrophoretic displays that improves the performance of such displays when they are deployed in low temperature environments and the displays are required to be updated when positioned vertically (i.e., the driving electric fields are substantially perpendicular to the direction of Earth's gravity). Methods are provided for displaying each of the colors at each pixel, as desired, with minimal interference (contamination) from the other particles.