Patents by Inventor Chen Kang HSIEH

Chen Kang HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20240120444
    Abstract: A light-emitting device includes a substrate, a semiconductor epitaxial structure, and an etch stop layer. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure has a side surface that has a roughened structure formed with protrusions, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer disposed on the first surface of the substrate in such order. The etch stop layer is disposed on a surface of the semiconductor epitaxial structure away from the substrate for preventing an etching solution from etching the semiconductor epitaxial structure. A light-emitting package and a light-emitting apparatus are also provided. A method for manufacturing a light-emitting device is also provided.
    Type: Application
    Filed: December 18, 2023
    Publication date: April 11, 2024
    Inventors: Wuqi SHEN, Die HU, Shaohua WU, Lingfei WANG, Zhendong NING, Chen Kang HSIEH, Chun-I CHANG, Duxiang WANG
  • Light emitting diode and fabrication method thereof
    Patent number: 11063184
    Abstract: A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.
    Type: Grant
    Filed: September 20, 2018
    Date of Patent: July 13, 2021
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chao Jin, Chuang Yu Hsieh, Chen Kang Hsieh, Duxiang Wang, Chaoyu Wu, Chih Pang Ma
  • Light Emitting Diode and Fabrication Method Thereof
    Publication number: 20190027652
    Abstract: A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.
    Type: Application
    Filed: September 20, 2018
    Publication date: January 24, 2019
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Chao JIN, Chuang Yu HSIEH, Chen Kang HSIEH, Duxiang WANG, Chaoyu WU, Chih Pang MA