Abstract: A semiconductor pattern includes a first pattern section and a second pattern section. Each of the first pattern section and the second pattern section includes a plurality of irregularly arranged first unit images and at least one set of second unit images disposed outside the first unit images. Each set of second unit images includes a plurality of second unit images that are equidistantly spaced apart from one another. The sets of second unit images of the first pattern section and the second pattern section form an outer part. The outer part has a plurality of sides, and each side is formed by one set of second unit images of the first pattern section and a corresponding set of second unit images of the second pattern section.

Abstract: A method for double patterning lithography includes: (a) forming a first pattern on a first material layer that is formed on a semiconductor substrate, the first pattern having a plurality of first parts extending in a first direction and spaced apart along a second direction transverse to the first direction, and a plurality of first gaps among the first parts; (b) forming a second pattern on the first pattern, the second pattern having a plurality of second parts extending in the second direction and spaced apart along the first direction, and a plurality of second gaps among the second parts, the first and second gaps intersecting each other and cooperatively defining a plurality of uncovering regions where the first and second gaps intersect each other; and (c) etching portions of the first material layer exposed via the uncovering regions.