Patents by Inventor Chen Lee-Chang

Chen Lee-Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240096757
    Abstract: An integrated circuit (IC) die includes first through third adjacent rows of through-silicon vias (TSVs), and first and second adjacent rows of memory macros. TSVs of the first row of TSVs extend through and are electrically isolated from memory macros of the first row of memory macros. TSVs of the third row of TSVs extend through and are electrically isolated from memory macros of the second row of memory macros.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Inventors: Hidehiro FUJIWARA, Tze-Chiang HUANG, Hong-Chen CHENG, Yen-Huei CHEN, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG, Yun-Han LEE, Lee-Chung LU
  • Publication number: 20240074337
    Abstract: A memory device includes a substrate, a bottom electrode disposed over the substrate, a top electrode disposed over the bottom electrode, and a phase change layer disposed between the top electrode and bottom electrode. The phase change layer includes a GeSbTe material that contains a Ge content of about 20 at % or less, a Sb content of about 30 at % or more, and a Te content of about 40 at % at or more.
    Type: Application
    Filed: August 26, 2022
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hengyuan Lee, Cheng-Chun Chang, Chen-Feng Hsu, Tung-Ying Lee, Xinyu BAO
  • Patent number: D336871
    Type: Grant
    Filed: October 22, 1991
    Date of Patent: June 29, 1993
    Inventor: Chen Lee-Chang
  • Patent number: D352442
    Type: Grant
    Filed: January 12, 1993
    Date of Patent: November 15, 1994
    Assignee: Co-Union Industry Co., Ltd.
    Inventor: Chen Lee-Chang