Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A magnetic filtering film is used to remove grains from liquid that goes through the magnetic filtering film. The magnetic filtering film includes a rubber film and micro-magnets. The rubber film is made of organic polymer. The rubber film is formed with apertures through which liquid can go. The micro-magnets are distributed in the rubber film for attracting ferromagnetic grains from the liquid.

Abstract: A magnetic filtering film is used to remove grains from liquid that goes through the magnetic filtering film. The magnetic filtering film includes a rubber film and micro-magnets. The rubber film is made of organic polymer. The rubber film is formed with apertures through which liquid can go. The micro-magnets are distributed in the rubber film for attracting ferromagnetic grains from the liquid.