Abstract: A grille light fixture and its housing are provided. The grille light fixture includes a housing, at least one light emitting device and an optical film. The housing has a base plate, a surrounding wall upwardly extending from the base plate and a plurality of supporting members disposed at the top of the surrounding wall, wherein the surrounding wall defines an opening. The light emitting device, an LED device for example, is disposed on the base plate. The optical film, a diffusion plate for example, is fixed on the supporting members and covers the opening.

Abstract: A method for processing a wafer in a reaction chamber is provided. The method includes the following steps: performing an over-etching, so as to have a sufficient oxide-layer isolation depth between metal wires; applying high-bias, high-watt plasma, so as to remove a reaction polymer on a surface of the wafer, and to remove the reaction polymer on the surface of the reaction chamber; and performing a static-eliminating procedure, so as to remove the static charges on the wafer, and then delivering the wafer out of the reaction chamber. Through the method with the high-bias, high-watt plasma of the present invention, the following efficacies can be achieved: (1) eliminating blemishes on the produced wafer; (2) prolonging a corrosion time of an aluminum-copper wire on the surface of the wafer; (3) prolonging an average cycle period for cleaning the reaction chamber; (4) shortening the time in the next acid tank; and (5) enhancing the yield of each wafer by 2-5%.

Abstract: Disclosed is a seasoning method for an etch chamber for improving the passing rate, comprising the steps of: introducing a wafer or plural control wafers into the etch chamber; introducing reacting gases into the etch chamber; applying power to top and bottom electrodes of the etch chamber to plasmarize the reacting gases; and adjusting the gate valve of the etch chamber to 90 to 100% of the fully open position, thereby reducing the amount of by-products and eliminating the factors for reducing the passing rate. The seasoning method of this invention is based on a low pressure, high flow-rate sluicing mechanism, where the atmospheric flow and high vacuuming ability would remove the maximum amount of polymer particles and flaking from the etch chamber.

Abstract: The present invention relates to a method for cleaning a metal etching chamber. The method is accomplished by using waterless auto cleaning first, followed by an Argon clean. The waterless auto cleaning process comprises two steps. First, oxygen plasma is used to eliminate the byproducts produced from the side reaction with photo resistant in the etching reaction. Second, chlorine plasma is used to eliminate the byproducts produced from the side reaction with a metal thin film under a photo resistant and the residual oxygen of the previous step. The Argon clean can further eliminate the residual chlorine of the previous step and the products produced in the chemical reaction during the process of waterless auto clean.