Patents by Inventor Chen MEI
Chen MEI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979202Abstract: An emulated card selection method is implemented on a mobile device having a near field communication (NEC) NFC function. A first emulated card and a second emulated card are configured on the mobile device, When detecting an NFC radio frequency field, the mobile device detects whether there is fingerprint input. The mobile device selects the first emulated card if there is the fingerprint input. The mobile device selects the second emulated card if there is no fingerprint input. The mobile device performs NEC interaction with the NFC card reader based on the selected first emulated card or second emulated card. The mobile device can automatically select an emulated card in different emulated cards based on a card swiping status when a user uses an NEC emulated card.Type: GrantFiled: December 29, 2017Date of Patent: May 7, 2024Assignee: HUAWEI TECHNOLOGIES CO., LTD.Inventors: Sishan Wang, Xinmiao Chang, Xiaona Zhao, Jingqing Mei, Chen Dong
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Patent number: 11959826Abstract: The disclosure is an engine simulation test device capable of realizing an ultrahigh compression temperature and pressure, belonging to the field of a diesel engine high-temperature and high-pressure system, solving the problems that the existing engine simulation test cannot achieve ultra-high compression temperature and pressure, and the temperature and pressure are not adjustable. It includes a compressed air inlet mechanism, a nitrogen gas inlet mechanism, a pressure stabilizing mechanism, a cyclic heating mechanism, an air inlet mechanism and a fast compressor mechanism.Type: GrantFiled: December 29, 2021Date of Patent: April 16, 2024Assignee: HARBIN ENGINEERING UNIVERSITYInventors: Long Liu, Yue Wu, Dai Liu, Qian Xiong, Xinru Shi, Shihai Liu, Chen An, Qihao Mei
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Publication number: 20230289211Abstract: A processor supports new thread group hierarchies by centralizing work distribution to provide hardware-guaranteed concurrent execution of thread groups in a thread group array through speculative launch and load balancing across processing cores. Efficiencies are realized by distributing grid rasterization among the processing cores.Type: ApplicationFiled: March 10, 2022Publication date: September 14, 2023Inventors: Gentaro HIROTA, Tanmoy MANDAL, Jeff TUCKEY, Kevin STEPHANO, Chen MEI, Shayani DEB, Naman GOVIL, Rajballav DASH, Ronny KRASHINSKY, Ze LONG, Brian PHARRIS
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Publication number: 20230236878Abstract: In various embodiments, scheduling dependencies associated with tasks executed on a processor are decoupled from data dependencies associated with the tasks. Before the completion of a first task that is executing in the processor, a scheduling dependency specifying that a second task is dependent on the first task is resolved based on a pre-exit trigger. In response to the resolution of the scheduling dependency, the second task is launched on the processor.Type: ApplicationFiled: January 25, 2022Publication date: July 27, 2023Inventors: Jack Hilaire CHOQUETTE, Rajballav DASH, Shayani DEB, Gentaro HIROTA, Ronny M. KRASHINSKY, Ze LONG, Chen MEI, Manan PATEL, Ming Y. SIU
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Patent number: 9236429Abstract: A semiconductor structure includes a substrate, a dam element, a first isolation layer, a second isolation layer, and a conductive layer. The substrate has a conductive pad, a trench, a sidewall, a first surface, and a second surface opposite to the first surface. The conductive pad is located on the second surface. The trench has a first opening at the first surface, and has a second opening at the second surface. The dam element is located on the second surface and covers the second opening. The dam element has a concave portion that is at the second opening. The first isolation layer is located on a portion of the sidewall. The second isolation layer is located on the first surface and the sidewall that is not covered by the first isolation layer, such that an interface is formed between the first and second isolation layers.Type: GrantFiled: April 29, 2015Date of Patent: January 12, 2016Assignee: XINTEC INC.Inventors: Yu-Lin Yen, Sheng-Hao Chiang, Hung-Chang Chen, Ho-Ku Lan, Chen-Mei Fan
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Publication number: 20150318348Abstract: A semiconductor structure includes a substrate, a dam element, a first isolation layer, a second isolation layer, and a conductive layer. The substrate has a conductive pad, a trench, a sidewall, a first surface, and a second surface opposite to the first surface. The conductive pad is located on the second surface. The trench has a first opening at the first surface, and has a second opening at the second surface. The dam element is located on the second surface and covers the second opening. The dam element has a concave portion that is at the second opening. The first isolation layer is located on a portion of the sidewall. The second isolation layer is located on the first surface and the sidewall that is not covered by the first isolation layer, such that an interface is formed between the first and second isolation layers.Type: ApplicationFiled: April 29, 2015Publication date: November 5, 2015Inventors: Yu-Lin YEN, Sheng-Hao CHIANG, Hung-Chang CHEN, Ho-Ku LAN, Chen-Mei FAN
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Publication number: 20150177748Abstract: A control method includes pre-setting a PMV index range for an internal space in which a fan and an air conditioner is mounted and measuring a PMV value of the internal space; comparing the PMV value of the internal space with the PMV index range; and increasing a rotational speed of the fan when the PMV value of the internal space is greater than the PMV value of the PMV index region, and decreasing the rotational speed of the fan when the PMV value of the internal space is less than the PMV value of the PMV index region.Type: ApplicationFiled: December 8, 2014Publication date: June 25, 2015Inventor: Chen-Mei LO
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Patent number: 8624383Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.Type: GrantFiled: July 14, 2010Date of Patent: January 7, 2014Inventors: Yu-Lin Yen, Chen-Mei Fan
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Patent number: 8003442Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.Type: GrantFiled: July 25, 2007Date of Patent: August 23, 2011Inventors: Yu-Lin Yen, Chen-Mei Fan
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Publication number: 20100276774Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device; a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.Type: ApplicationFiled: July 14, 2010Publication date: November 4, 2010Inventors: Yu-Lin YEN, Chen-Mei Fan
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Publication number: 20080230860Abstract: The invention provides an integrated circuit package and method of fabrication thereof. The integrated circuit package comprises an integrated circuit chip having a photosensitive device thereon; a bonding pad formed on an upper surface of the integrated circuit chip and electrically connected to the photosensitive device, a barrier formed between the bonding pad and the photosensitive device; and a conductive layer formed on a sidewall of the integrated circuit chip and electrically connected to the bonding pad. The barrier layer blocks overflow of the adhesive layer into a region, on which the photosensitive device is formed, to improve yield for fabricating the integrated circuit package.Type: ApplicationFiled: July 25, 2007Publication date: September 25, 2008Inventors: Yu-Lin Yen, Chen-Mei Fan
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Patent number: 6742532Abstract: A cleaning container and method for using the same for chemically cleaning elongated members including quartz thermocouple sleeves including a first body member and a second body member said first body member and second body member respectively forming a first containing space and a second containing space including a first means for reversibly compressively sealing the first body member and the second body member to a form a combined containing space for sealably holding a cleaning solution level; a cap member disposed at a distal end of the first body member said cap member including a second means for reversibly compressively sealing a first opening in communication with the first containing space; and, a second opening centrally disposed in a distal end of the second containing space said second opening including a third means for reversibly compressively sealing around at least one elongated member penetrating through said second opening.Type: GrantFiled: January 9, 2002Date of Patent: June 1, 2004Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yung-Pin Lin, Chung-Ray Chen, Chen-Mei Fan, Chan-Chung Shu
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Publication number: 20030127114Abstract: A cleaning container and method for using the same for chemically cleaning elongated members including quartz thermocouple sleeves including a first body member and a second body member said first body member and second body member respectively forming a first containing space and a second containing space including a first means for reversibly compressively sealing the first body member and the second body member to a form a combined containing space for sealably holding a cleaning solution level; a cap member disposed at a distal end of the first body member said cap member including a second means for reversibly compressively sealing a first opening in communication with the first containing space; and, a second opening centrally disposed in a distal end of the second containing space said second opening including a third means for reversibly compressively sealing around at least one elongated member penetrating through said second opening.Type: ApplicationFiled: January 9, 2002Publication date: July 10, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yung-Pin Lin, Chung-Ray Chen, Chen-Mei Fan, Chien-Chung Hsu
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Patent number: 6538237Abstract: An apparatus for fixing the position of a quartz furnace tube in a semiconductor processing furnace is described. The furnace is of the type that has a cylindrical body possessing an open end through which the tube may be withdrawn, and a base postioned on the open end, wherein the tube includes a flange portion secured to the base through which gas may be withdrawn from or introduced into the furnace tube. The tube is coaxially disposed within the furnace body. The apparatus may include two clamp halves each has a half-circular shape for engaging the flange portion of the furnace tube onto the base, and a mounting means for mounting the two clamp halves to the base.Type: GrantFiled: January 8, 2002Date of Patent: March 25, 2003Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Ming-Hsun Yang, Chen-Mei Fan, Allan Wang, June-Yie Kao
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Patent number: 6252410Abstract: A pico fuse detector assembly incorporating a probe structure that minimizes short-out of closely adjacent pico fuses during testing has two probe arms, each pivotably connected at one end to a detector body with their free ends adjustably dispaceable from each other and respectively accomodating improved probe elements thereon. Each probe element has a conductive lead disposed inside an insulating housing connected at one end to a set of test contacts extending from the bottom of the housing. The other end of the lead is coupled by a spring to a test circuit. The restricting of the contact area with the isolating housing limits the chance of the contacts accidentally being placed at a location to cause damage to two closely arranged adjacent pico fuses under test and thus obviates the problem of fuse short-out during measuring of the closely arranged fuses. Also, the contacts and lead are axially movable by virtue of the spring-mounting to the test circuit.Type: GrantFiled: January 29, 1999Date of Patent: June 26, 2001Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventor: Chen Mei Fan
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Patent number: 6191035Abstract: In a CVD vacuum chamber processing system for depositing a blanket of refractory material, such as tungsten, upon a frontside of a semiconductor wafer, an inert gas, such as argon is directed to the backside of the wafer in a manner so as to prevent the chamber reaction gases from reacting with polysilicon or other materials on the backside of the wafer as well as to prevent the deposition of the blanket material on the backside of the wafer. This method alleviates the problems of particulate generation and loss of wafer backside datum surface due to the inadvertent buildup of unwanted materials. The wafer is placed on a heater platen and is secured by a specified range of vacuum pressures. The wafer is exposed to specified ranges of chamber pressure during the deposition phase. During the purge phase, the chamber pressure is reduced and the wafer chucking pressure is increased to a specified range. The method is terminated with the equalization of pressure between the front and backside of the wafer.Type: GrantFiled: May 17, 1999Date of Patent: February 20, 2001Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Kuo-Hsien Cheng, Chen-Mei Fan
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Patent number: D1017882Type: GrantFiled: February 21, 2023Date of Patent: March 12, 2024Assignee: JIAXING SUPER LIGHTING ELECTRIC APPLIANCE CO., LTDInventors: Tao Jiang, Ming-Bin Wang, Chen-Kun Chen, Dong-Mei Zhang