Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.

Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.

Abstract: A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions.

Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes.

Abstract: A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions.

Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image.

Abstract: The present invention is related to an illumination device capable of producing ambient light and whose structure can be efficiently manufactured and assembled. The illumination device comprises: a substrate electrically connect to a power supply, a plurality of light sources attached to a surface of the substrate, a reflection body with a reflection surface situated a distance from said plurality of light sources, a shell having a diffusion surface situated a distance from said reflection surface. The illumination device may further comprise a housing for receiving and supporting the substrate and the reflection body. The housing is configured to join with the shell and can be further attached to an external device receiving the ambient light. The light emitted from the light sources is reflected by the reflection body to the diffusion member and then radiates outwardly to the surrounding environment of the shell. The reflection surface of the reflection body is inclined at angle relative to the substrate.

Abstract: The present invention is related to an illumination device capable of producing ambient light and whose structure can be efficiently manufactured and assembled. The illumination device comprises: a substrate electrically connect to a power supply, a plurality of light sources attached to a surface of the substrate, a reflection body with a reflection surface situated a distance from said plurality of light sources, a shell having a diffusion surface situated a distance from said reflection surface. The illumination device may further comprise a housing for receiving and supporting the substrate and the reflection body. The housing is configured to join with the shell and can be further attached to an external device receiving the ambient light. The light emitted from the light sources is reflected by the reflection body to the diffusion member and then radiates outwardly to the surrounding environment of the shell. The reflection surface of the reflection body is inclined at angle relative to the substrate.

Abstract: The present invention is to provide a TV image conversion device for turning a computer on or off by means of a multimedia remote control. The TV image conversion device is electrically coupled to a computer enabling a user to operate a computer on-off switch on the multimedia remote control to turn the computer on or off wirelessly rather than walk to a computer to either turn the computer on or off by pressing an on/off switch on the computer. By utilizing this, the above drawback of incapable of turning a computer on or off by means of a remote control as experienced by the prior art can be overcome.