Patents by Inventor Chen Ming Wang
Chen Ming Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250089334Abstract: A semiconductor includes a substrate. A gate structure is disposed on the substrate. A liner oxide contacts a side of the gate structure. A silicon oxide spacer contacts the liner oxide. An end of the silicon oxide spacer forms a kink profile. A silicon nitride spacer contacts the silicon oxide spacer and a tail of the silicon nitride spacer covers part of the kink profile. A stressor covers the silicon nitride spacer and the substrate.Type: ApplicationFiled: October 13, 2023Publication date: March 13, 2025Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Fan Li, Chen-Ming Wang, Po-Ching Su, Pei-Hsun Kao, Ti-Bin Chen, Chun-Wei Yu, Chih-Chiang Wu
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Publication number: 20240295820Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.Type: ApplicationFiled: May 14, 2024Publication date: September 5, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Tsung SHIH, Chen-Ming WANG, Yahru CHENG, Bo-Tsun LIU, Tsung Chuan LEE
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Patent number: 12013641Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.Type: GrantFiled: July 27, 2022Date of Patent: June 18, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Tsung Shih, Chen-Ming Wang, Yahru Cheng, Bo-Tsun Liu, Tsung Chuan Lee
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Patent number: 11703762Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.Type: GrantFiled: October 24, 2019Date of Patent: July 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Tsung Shih, Chen-Ming Wang, Yahru Cheng, Bo-Tsun Liu, Tsung Chuan Lee
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Publication number: 20220373890Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Chih-Tsung SHIH, Chen-Ming WANG, Yahru CHENG, Bo-Tsun LIU, Tsung Chuan LEE
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Publication number: 20200133127Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.Type: ApplicationFiled: October 24, 2019Publication date: April 30, 2020Inventors: Chih-Tsung SHIH, Chen-Ming WANG, Yahru CHENG, Bo-Tsun LIU, Tsung Chuan LEE
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Patent number: 10274839Abstract: A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions.Type: GrantFiled: May 24, 2013Date of Patent: April 30, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wen-Zhan Zhou, Heng-Jen Lee, Chen-Ming Wang, Kai-Hsiung Cheng, Chih-Ming Ke, Ho-Yung David Hwang
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Patent number: 8837810Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes.Type: GrantFiled: March 27, 2012Date of Patent: September 16, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Liang Chen, Te-Chih Huang, Chen-Ming Wang, Chih-Ming Ke, Tsai-Sheng Gau
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Publication number: 20140253901Abstract: A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions.Type: ApplicationFiled: May 24, 2013Publication date: September 11, 2014Inventors: Wen-Zhan Zhou, Heng-Jen Lee, Chen-Ming Wang, Kai-Hsiung Cheng, Chih-Ming Ke, Ho-Yung David Hwang
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Publication number: 20130259358Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image.Type: ApplicationFiled: March 27, 2012Publication date: October 3, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”)Inventors: Yen-Liang Chen, Te-Chih Huang, Chen-Ming Wang, Chih-Ming Ke, Tsai-Sheng Gau
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Patent number: 7635199Abstract: The present invention is related to an illumination device capable of producing ambient light and whose structure can be efficiently manufactured and assembled. The illumination device comprises: a substrate electrically connect to a power supply, a plurality of light sources attached to a surface of the substrate, a reflection body with a reflection surface situated a distance from said plurality of light sources, a shell having a diffusion surface situated a distance from said reflection surface. The illumination device may further comprise a housing for receiving and supporting the substrate and the reflection body. The housing is configured to join with the shell and can be further attached to an external device receiving the ambient light. The light emitted from the light sources is reflected by the reflection body to the diffusion member and then radiates outwardly to the surrounding environment of the shell. The reflection surface of the reflection body is inclined at angle relative to the substrate.Type: GrantFiled: March 1, 2007Date of Patent: December 22, 2009Assignee: UPEC Electronics Corp.Inventors: Huang-Chen Guo, Chen-Yuan Huang, Chen-Ming Wang, Tzy-Chang Tan, Kun-Han Hsieh, Kai-Chi Chang
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Publication number: 20070147048Abstract: The present invention is related to an illumination device capable of producing ambient light and whose structure can be efficiently manufactured and assembled. The illumination device comprises: a substrate electrically connect to a power supply, a plurality of light sources attached to a surface of the substrate, a reflection body with a reflection surface situated a distance from said plurality of light sources, a shell having a diffusion surface situated a distance from said reflection surface. The illumination device may further comprise a housing for receiving and supporting the substrate and the reflection body. The housing is configured to join with the shell and can be further attached to an external device receiving the ambient light. The light emitted from the light sources is reflected by the reflection body to the diffusion member and then radiates outwardly to the surrounding environment of the shell. The reflection surface of the reflection body is inclined at angle relative to the substrate.Type: ApplicationFiled: March 1, 2007Publication date: June 28, 2007Inventors: Huang-Chen Guo, Chen-Yuan Huang, Chen-Ming Wang, Tzy-Chang Tan, Kun-Han Hsieh, Kai-Chi Chang
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Patent number: 7098968Abstract: The present invention is to provide a TV image conversion device for turning a computer on or off by means of a multimedia remote control. The TV image conversion device is electrically coupled to a computer enabling a user to operate a computer on-off switch on the multimedia remote control to turn the computer on or off wirelessly rather than walk to a computer to either turn the computer on or off by pressing an on/off switch on the computer. By utilizing this, the above drawback of incapable of turning a computer on or off by means of a remote control as experienced by the prior art can be overcome.Type: GrantFiled: April 2, 2003Date of Patent: August 29, 2006Assignee: Elitegroup Computer Systems, Co., Ltd.Inventors: Chen Ming Wang, Hsien Yao Hsieh, Hung Chih Huang