Abstract: The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 independently represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.

Abstract: A silver compound having a silver complex structure composed of silver ion, 2,2,6,6-tetramethyl-3,5-heptanedionato, and diethylenetriamine is disclosed. A silver ink is prepared by the silver compound applied for inkjet printing of a flexible substrate. A method for inkjet printing of the flexible substrate comprises the steps of pre-heating the flexible substrate to the temperature of 60° C., inkjet printing the flexible substrate with the silver ink thereon, and heating the flexible substrate under a low temperature to form a thin film of silver conductive pattern thereon. The silver conductive pattern has excellent electrical conductivity and a resistance value proximate to that of a general silver slug.

Abstract: A silver compound having a silver complex structure composed of silver ion, 2,2,6,6-tetramethyl-3,5-heptanedionato, and diethylenetriamine is disclosed. A silver ink is prepared by the silver compound applied for inkjet printing of a flexible substrate. A method for inkjet printing of the flexible substrate comprises the steps of pre-heating the flexible substrate to the temperature of 60° C., inkjet printing the flexible substrate with the silver ink thereon, and heating the flexible substrate under a low temperature to form a thin film of silver conductive pattern thereon. The silver conductive pattern has excellent electrical conductivity and a resistance value proximate to that of a general silver slug.

Abstract: A method for forming a conductive film at room temperature is provided and includes steps of: adding AgNO3 into a first solution of dodecanoic acid; dropping n-butylamine and a diluted aqueous solution of a reducing agent into the first solution in turn, so as to initially obtain the dodecanoate-protected silver nanoparticles as a capping ligand; then using cyclohexane as a solvent to apply the silver nanoparticles onto a surface of a substrate to form a patterned film of silver nanoparticles; and finally immersing the substrate into a high concentrated aqueous solution of a reducing agent to chemically reduce the patterned film of silver nanoparticles into a conductive silver film. Thus, a patterned film or circuit can be conveniently and rapidly formed, and the silver nanoparticles can be applied to flexible substrates with low material cost and temperature sensitivity.