Patents by Inventor Chen-Pei Hsieh

Chen-Pei Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor package including offset stack of semiconductor dies between first and second redistribution structures, and manufacturing method therefor
    Patent number: 11158608
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first redistribution structure, a second redistribution structure, a first semiconductor die, a second semiconductor die and an encapsulant. The second redistribution structure is vertically overlapped with the first redistribution structure. The first and second semiconductor dies are located between the first and second redistribution structures, and respectively have an active side and a back side opposite to the active side, as well as a conductive pillar at the active side. The back side of the first semiconductor die is attached to the back side of the second semiconductor die. The conductive pillar of the first semiconductor die is attached to the first redistribution structure, whereas the conductive pillar of the second semiconductor die extends to the second redistribution structure.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: October 26, 2021
    Assignee: Powertech Technology Inc.
    Inventors: Kuang-Jen Shen, Chen-Pei Hsieh
  • SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210091043
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first redistribution structure, a second redistribution structure, a first semiconductor die, a second semiconductor die and an encapsulant. The second redistribution structure is vertically overlapped with the first redistribution structure. The first and second semiconductor dies are located between the first and second redistribution structures, and respectively have an active side and a back side opposite to the active side, as well as a conductive pillar at the active side. The back side of the first semiconductor die is attached to the back side of the second semiconductor die. The conductive pillar of the first semiconductor die is attached to the first redistribution structure, whereas the conductive pillar of the second semiconductor die extends to the second redistribution structure.
    Type: Application
    Filed: September 25, 2019
    Publication date: March 25, 2021
    Applicant: Powertech Technology Inc.
    Inventors: Kuang-Jen Shen, Chen-Pei Hsieh