Patents by Inventor Chen Perkins Yan

Chen Perkins Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210335772
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.
    Type: Application
    Filed: April 24, 2020
    Publication date: October 28, 2021
    Inventors: Wenjun LI, Chen PERKINS YAN, Tamilmani ETHIRAJAN, Cole E. ZEMKE
  • Patent number: 11158624
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to unitary Cascode cells with resistance and capacitance optimization, and methods of manufacture. The structure includes a common source FET (CS-FET) in a first portion of a single common semiconductor region, the CS-FET comprising a source region and a drain region, a common gate FET (CG-FET) in a second portion of the single common semiconductor region, the CG-FET comprising a source region and a drain region, and a doped connecting region of the single common semiconductor region, connecting the drain of the CS-FET and the source of the CG-FET.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: October 26, 2021
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Wenjun Li, Chen Perkins Yan, Tamilmani Ethirajan, Cole E. Zemke