Patents by Inventor Chen-Pin Hsu
Chen-Pin Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948776Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.Type: GrantFiled: January 21, 2021Date of Patent: April 2, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Chen Pin Hsu, Hitoshi Tamura
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Publication number: 20230352273Abstract: A plasma processing apparatus adapted to reduce non-uniformity of plasma distribution in a process chamber and to adjust the plasma distribution to “centrally high density”, “circumferentially high density”, or “uniform density” in accordance with a desired etching process, a process chamber; a radio frequency power source; a rectangular waveguide; and a circular waveguide connected to the rectangular waveguide, in which the rectangular waveguide includes an upper rectangular waveguide and a lower rectangular waveguide formed by vertically dividing the rectangular waveguide; and a cutoff section which cuts off the microwave frequency power and which has a dielectric body. The circular waveguide includes an inner waveguide connected to the upper rectangular waveguide and formed inside; and an outer waveguide connected to the lower rectangular waveguide and formed on an outer side of the inner waveguide. The cutoff section has a width narrower than those of the rectangular waveguides except the cutoff section.Type: ApplicationFiled: January 21, 2021Publication date: November 2, 2023Inventors: Chen Pin Hsu, Hitoshi Tamura
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Publication number: 20230352274Abstract: A plasma processing apparatus includes: a vacuum chamber that includes a plasma processing chamber in which a substrate is to be plasma-processed and that can exhaust an inside of the plasma processing chamber to vacuum; and a microwave power supply unit that supplies a microwave power to the vacuum chamber via a circular waveguide. The vacuum chamber includes: a parallel flat plate line portion that is connected to the circular waveguide and receives a microwave power propagated from the circular waveguide; a ring resonator unit that is disposed on an outer periphery of the parallel flat plate line portion and receives the microwave power propagated from the parallel flat plate line portion; a cavity portion that receives a microwave power radiated from a slot antenna formed in the ring resonator unit; and a microwave introduction window that separates the cavity portion from the plasma processing chamber.Type: ApplicationFiled: December 24, 2020Publication date: November 2, 2023Inventors: Hitoshi Tamura, Norihiko Ikeda, Chen Pin Hsu
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Publication number: 20220344132Abstract: In order to enable plasma density distribution control having a high degree of freedom to solve problems of not only in-plane uniformity of an etching processing but also a reduction of a charge-up damage, a plasma processing apparatus includes: a vacuum chamber provided with a plasma processing chamber that plasma-processes a substrate inside and is able to exhaust the inside of this plasma processing chamber to a vacuum; and a microwave power supply unit that is provided with a microwave source and a circular waveguide and supplies, via the circular waveguide, a microwave power oscillated from the microwave source to the vacuum chamber, in which the microwave power supply unit is configured by arranging a plurality of waveguides, which are coaxially and concentrically arranged with the circular waveguide and have different dielectric constants inside, between the circular waveguide and the vacuum chamber.Type: ApplicationFiled: April 30, 2020Publication date: October 27, 2022Inventors: Chen Pin Hsu, Hitoshi Tamura
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Publication number: 20220246843Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.Type: ApplicationFiled: April 21, 2022Publication date: August 4, 2022Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20210351345Abstract: Some embodiments relate to an integrated chip having a memory cell overlying a substrate and comprising a top electrode. A top electrode via overlies the top electrode. A width of an upper surface of the top electrode via is greater than a width of an upper surface of the top electrode. A conductive via overlies the top electrode via. A width of an upper surface of the conductive via is greater than the width of the upper surface of the top electrode via.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 11075335Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.Type: GrantFiled: May 10, 2019Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Publication number: 20200098982Abstract: Some embodiments relate to a method for manufacturing a memory device. The method includes forming a first masking layer disposed over a dielectric layer, the first masking layer exhibiting sidewalls defining an opening disposed above a magnetoresistive random-access memory (MRAM) cell located in an embedded memory region. A first etch is performed to form a first via opening within the dielectric layer above the MRAM cell. A top electrode via layer formed over the MRAM cell and the dielectric layer. A first planarization process performed on the top electrode via layer to remove part of the top electrode via layer and define a top electrode via having a substantially flat top surface.Type: ApplicationFiled: May 10, 2019Publication date: March 26, 2020Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
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Patent number: 10242963Abstract: Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.Type: GrantFiled: April 13, 2016Date of Patent: March 26, 2019Assignee: National Tsing Hua UniversityInventors: Yu-Lin Wang, Chen-Pin Hsu, Pei-Chi Chen
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Patent number: 10107824Abstract: A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample includes: applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor and having a receptor immobilized thereon for specific binding with the CVD biomarker, the liquid sample being in contact with the gate terminal and the reactive electrode; applying a voltage pulse between the reactive electrode and the source, the voltage pulse having a pulse width; monitoring a response current in response to the voltage pulse; and analyzing the response current.Type: GrantFiled: September 27, 2016Date of Patent: October 23, 2018Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Yu-Lin Wang, Gwo-Bin Lee, Shu-Chu Shiesh, Jen-Inn Chyi, Abiral Regmi, Indu Sarangadharan, Chen-Pin Hsu
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Patent number: 9891186Abstract: A method for analyzing concentration of an analyte in a liquid sample applied to a biosensor includes: applying a voltage pulse to the liquid sample applied to the biosensor, the voltage pulse having a pulse width of not greater than 10?3 second; monitoring a response current, which is produced in response to the voltage pulse, within the pulse width via electrodes of the biosensor; and analyzing the response current that is correlated to the concentration of the analyte in the liquid sample.Type: GrantFiled: September 30, 2015Date of Patent: February 13, 2018Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Yu-Lin Wang, Chen-Pin Hsu
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Publication number: 20170248590Abstract: Provided is a manufacturing method of a sensor including the following steps. A mold having a cavity is provided. At least one chip is disposed in the cavity. The chip has an active surface and a back surface opposite to each other. The active surface faces toward a bottom surface of the cavity. A polymer material is filled in the cavity to cover the back surface of the chip. A heat treatment is performed, such that the polymer material is solidified to form a polymer substrate. A mold release treatment is performed to isolate the polymer substrate from the cavity. A plurality of conductive lines are formed on a first surface of the polymer substrate. The conductive lines are electrically connected with the chip.Type: ApplicationFiled: April 13, 2016Publication date: August 31, 2017Inventors: Yu-Lin Wang, Chen-Pin Hsu, Pei-Chi Chen
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Publication number: 20170016916Abstract: A method for analyzing concentration of a cardiovascular disease (CVD) biomarker in a liquid sample includes: applying the liquid sample to a biosensor, the biosensor including a transistor having a drain, a source, and a gate terminal disposed between the gate and the source, and a reactive electrode spaced apart from the gate terminal of the transistor and having a receptor immobilized thereon for specific binding with the CVD biomarker, the liquid sample being in contact with the gate terminal and the reactive electrode; applying a voltage pulse between the reactive electrode and the source, the voltage pulse having a pulse width; monitoring a response current in response to the voltage pulse; and analyzing the response current.Type: ApplicationFiled: September 27, 2016Publication date: January 19, 2017Applicant: National Tsing Hua UniversityInventors: Yu-Lin WANG, Gwo-Bin LEE, Shu-Chu SHIESH, Jen-Inn CHYI, Abiral REGMI, Indu SARANGADHARAN, Chen-Pin HSU
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Publication number: 20160282295Abstract: A method for analyzing concentration of an analyte in a liquid sample applied to a biosensor includes: applying a voltage pulse to the liquid sample applied to the biosensor, the voltage pulse having a pulse width of not greater than 10?3 second; monitoring a response current, which is produced in response to the voltage pulse, within the pulse width via electrodes of the biosensor; and analyzing the response current that is correlated to the concentration of the analyte in the liquid sample.Type: ApplicationFiled: September 30, 2015Publication date: September 29, 2016Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Yu-Lin WANG, Chen-Pin HSU
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Patent number: 9419099Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes forming a gate stack over a silicon substrate, forming dummy spacers on sidewalls of the gate stack, isotropically etching the silicon substrate to form recess regions on either side of the gate stack, forming a semiconductor material in the recess regions, the semiconductor material being different from the silicon substrate, removing the dummy spacers, forming spacer layers having an oxide-nitride-oxide configuration over the gate stack and the semiconductor material, and etching the spacer layers to form gate spacers on the sidewalls of the gate stack.Type: GrantFiled: April 16, 2015Date of Patent: August 16, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Pin Hsu, Harry Chuang, Kong-Beng Thei
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Patent number: 9117840Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes forming a gate stack over a silicon substrate, forming dummy spacers on sidewalls of the gate stack, isotropically etching the silicon substrate to form recess regions on either side of the gate stack, forming a semiconductor material in the recess regions, the semiconductor material being different from the silicon substrate, removing the dummy spacers, forming spacer layers having an oxide-nitride-oxide configuration over the gate stack and the semiconductor material, and etching the spacer layers to form gate spacers on the sidewalls of the gate stack.Type: GrantFiled: February 17, 2012Date of Patent: August 25, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Pin Hsu, Kong-Beng Thei, Harry Chuang
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Publication number: 20150228790Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes forming a gate stack over a silicon substrate, forming dummy spacers on sidewalls of the gate stack, isotropically etching the silicon substrate to form recess regions on either side of the gate stack, forming a semiconductor material in the recess regions, the semiconductor material being different from the silicon substrate, removing the dummy spacers, forming spacer layers having an oxide-nitride-oxide configuration over the gate stack and the semiconductor material, and etching the spacer layers to form gate spacers on the sidewalls of the gate stack.Type: ApplicationFiled: April 16, 2015Publication date: August 13, 2015Inventors: Chen-Pin Hsu, Harry Chuang, Kong-Beng Thei
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Patent number: 8629515Abstract: A semiconductor device includes a semiconductor substrate, a source and a drain region formed on the semiconductor substrate, and a gate structure disposed on the substrate between the source and drain regions. The gate structure includes an interfacial layer formed over the substrate, a high-k dielectric formed over the interfacial layer, and a metal gate formed over the high-k dielectric that includes a first metal layer and a second metal layer, where the first metal layer is formed on a portion of the sidewalls of the gate structure and where the second metal layer is formed on another portion of the sidewalls of the gate structure.Type: GrantFiled: September 26, 2011Date of Patent: January 14, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Han Yeh, Chen-Pin Hsu, Ming-Yuan Wu, Kong-Beng Thei, Harry Chuang
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Publication number: 20120146057Abstract: The present disclosure provides a method for fabricating a semiconductor device that includes forming a gate stack over a silicon substrate, forming dummy spacers on sidewalls of the gate stack, isotropically etching the silicon substrate to form recess regions on either side of the gate stack, forming a semiconductor material in the recess regions, the semiconductor material being different from the silicon substrate, removing the dummy spacers, forming spacer layers having an oxide-nitride-oxide configuration over the gate stack and the semiconductor material, and etching the spacer layers to form gate spacers on the sidewalls of the gate stack.Type: ApplicationFiled: February 17, 2012Publication date: June 14, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Pin Hsu, Kong-Beng Thei, Harry Chuang
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Patent number: 8153498Abstract: A semiconductor device and method for fabricating a semiconductor device protecting a resistive structure in gate replacement processing is disclosed. The method comprises providing a semiconductor substrate; forming at least one gate structure including a dummy gate over the semiconductor substrate; forming at least one resistive structure including a gate over the semiconductor substrate; exposing a portion of the gate of the at least one resistive structure; forming an etch stop layer over the semiconductor substrate, including over the exposed portion of the gate; removing the dummy gate from the at least one gate structure to create an opening; and forming a metal gate in the opening of the at least one gate structure.Type: GrantFiled: March 11, 2009Date of Patent: April 10, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Pin Hsu, Chung-Long Cheng, Kong-Beng Thei, Harry Chuang