Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: An automobile remote control circuitry. There are wireless transmission circuitry and wireless receiving circuitry each on the remote control itself and the circuitry inside the automobile. The special feature: the wireless transmission circuitry and wireless receiving circuitry apply the same specification of LO base band frequency circuitry. Based on above structure, it can reduce the number of components used in the bi-direction remote control, lower the total component cost and easier in manufacture processes.

Abstract: An automobile remote control circuitry. There are wireless transmission circuitry and wireless receiving circuitry each on the remote control itself and the circuitry inside the automobile. The special feature: the wireless transmission circuitry and wireless receiving circuitry apply the same specification of LO base band frequency circuitry. Based on above structure, it can reduce the number of components used in the bi-direction remote control, lower the total component cost and easier in manufacture processes.