Patents by Inventor Chen-Shiang Shieh

Chen-Shiang Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with robust polysilicon fuse
    Patent number: 7576374
    Abstract: A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
    Type: Grant
    Filed: June 26, 2006
    Date of Patent: August 18, 2009
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yuan-Pang Lee, Chen-Shiang Shieh, Ping-Hung Yin, Fei-Yun Chen, Yuan-Ko Hwang
  • SEMICONDUCTOR DEVICE WITH ROBUST POLYSILICON FUSE
    Publication number: 20060240363
    Abstract: A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
    Type: Application
    Filed: June 26, 2006
    Publication date: October 26, 2006
    Inventors: Yuan-Pang Lee, Chen-Shiang Shieh, Ping-Hung Yin, Fei-Yun Chen, Yuan-Ko Hwang
  • Method of fabricating a poly fuse
    Patent number: 7083897
    Abstract: A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
    Type: Grant
    Filed: May 15, 2003
    Date of Patent: August 1, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yuan-Pang Lee, Chen-Shiang Shieh, Ping-Hung Yin, Fei-Yun Chen, Yuan-Ko Hwang
  • Method of fabricating a poly fuse
    Publication number: 20040229168
    Abstract: A new method is provided to create a polysilicon fuse. The invention provides for applying a first oxide plasma treatment to the surface of the created polysilicon fuse, creating a thin layer of native oxide over the surface of the created polysilicon fuse, followed by a DI water rinse. This thin layer of native oxide is made more robust by applying a second oxide plasma treatment to exposed surfaces, this more robust layer of native oxide protects the polysilicon fuse during subsequent processing steps of wet photoresist and polymer removal.
    Type: Application
    Filed: May 15, 2003
    Publication date: November 18, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co.
    Inventors: Yuan-Pang Lee, Chen-Shiang Shieh, Ping-Hung Yin, Fei-Yun Chen, Yuan-Ko Hwang