Patents by Inventor Chen-Shuo HSIEH

Chen-Shuo HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Liquid crystal display device
    Patent number: 11036094
    Abstract: A liquid crystal display device including a first flexible substrate, a plurality of first spacers, a second flexible substrate, a plurality of second spacers, and a liquid crystal layer is provided. The first spacers are disposed on the first flexible substrate, the second flexible substrate is disposed opposite to the first flexible substrate, the second spacers are disposed on the second flexible substrate, and the liquid crystal layer is disposed between the first flexible substrate and the second flexible substrate.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: June 15, 2021
    Assignee: InnoLux Corporation
    Inventors: Yu-Chih Tseng, Chu-Hong Lai, Kuo-Shun Tsai, Chen-Shuo Hsieh
  • LIQUID CRYSTAL DISPLAY DEVICE
    Publication number: 20200249514
    Abstract: A liquid crystal display device including a first flexible substrate, a plurality of first spacers, a second flexible substrate, a plurality of second spacers, and a liquid crystal layer is provided. The first spacers are disposed on the first flexible substrate, the second flexible substrate is disposed opposite to the first flexible substrate, the second spacers are disposed on the second flexible substrate, and the liquid crystal layer is disposed between the first flexible substrate and the second flexible substrate.
    Type: Application
    Filed: December 31, 2019
    Publication date: August 6, 2020
    Inventors: Yu-Chih Tseng, Chu-Hong Lai, Kuo-Shun Tsai, Chen-Shuo Hsieh
  • METAL-LAMINATED STRUCTURE AND HIGH-FREQUENCY DEVICE COMPRISING THE SAME
    Publication number: 20180206334
    Abstract: A metal-laminated structure is provided. The metal-laminated structure includes a substrate, a compressive stress layer disposed on the substrate, and at least one metal layer disposed on the compressive stress layer, wherein the thickness ratio of the metal layer to the compressive stress layer is in a range from 1 to 30. A high-frequency device including the metal-laminated structure is also provided.
    Type: Application
    Filed: December 22, 2017
    Publication date: July 19, 2018
    Inventors: I-Yin LI, Chia-Chi HO, Yi-Hung LIN, Chen-Shuo HSIEH, Ker-Yih KAO