Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A fixing frame for a heat sink includes boards, at least one foldable plate, and connection members. The boards surround a hollow area, and the hollow area includes a main accommodating space and at least one subsidiary accommodating space at one side of the main accommodating space. At least one foldable plate is detachably connected to one of the boards and is disposed in the subsidiary accommodating space. The connection members are disposed on the boards. By means of the connection members, the fixing frame mounts the heat sink on a circuit board of various sizes to dissipate heat therefrom.

Abstract: A fixing frame for a heat sink includes boards, at least one foldable plate, and connection members. The boards surround a hollow area, and the hollow area includes a main accommodating space and at least one subsidiary accommodating space at one side of the main accommodating space. At least one foldable plate is detachably connected to one of the boards and is disposed in the subsidiary accommodating space. The connection members are disposed on the boards. By means of the connection members, the fixing frame mounts the heat sink on a circuit board of various sizes to dissipate heat therefrom.

Abstract: An adjustable fastening bracket used in a radiator includes a supporting stand which includes a plate body provided with pluralities of combination grooves, each combination groove includes a through hole and a long through groove, at least one side of the long through groove away from the through hole is provided with at least one positioning recess; pluralities of positioning elements, each of which includes a positioning plate and a pair of elastic arms, a penetrating hole is provided on the positioning plate corresponding to the through hole, each elastic arm has a positioning convex part; pluralities of fixing elements, each of which penetrates the penetrating hole and the through hole to be disposed in each combination groove, and each fixing element drives the pair of elastic arms to make the positioning convex part of the pair of the elastic arms clip into any one of the positioning recesses.

Abstract: An adjustable fastening bracket used in a radiator includes a supporting stand which includes a plate body provided with pluralities of combination grooves, each combination groove includes a through hole and a long through groove, at least one side of the long through groove away from the through hole is provided with at least one positioning recess; pluralities of positioning elements, each of which includes a positioning plate and a pair of elastic arms, a penetrating hole is provided on the positioning plate corresponding to the through hole, each elastic arm has a positioning convex part; pluralities of fixing elements, each of which penetrates the penetrating hole and the through hole to be disposed in each combination groove, and each fixing element drives the pair of elastic arms to make the positioning convex part of the pair of the elastic arms clip into any one of the positioning recesses.

Abstract: In a method of manufacturing MOSFET devices, and particularly to the trench-type MOSFET devices, embodiments of the present invention provide methods of forming bottom oxide layers having uniform thickness on the bottom of the trenches and avoiding undesired damage in the partial semiconductor substrate near the top of the trenches. In one embodiment, a method for manufacturing a trench-type MOSFET comprises providing a semiconductor substrate and forming a trench on the semiconductor substrate; forming a first oxide layer on a bottom and sidewalls of the trench and on the semiconductor substrate; forming a bottom anti-reflective coating (BARC) layer in the trench to cover the first oxide layer; forming a photoresist layer on the bottom anti-reflective coating layer; removing the photoresist layer; removing the bottom anti-reflective coating layer; and removing the first oxide layer on the sidewalls of the trench to form a bottom oxide layer on the bottom of the trench.

Abstract: Embodiments of the present invention provide a developing method, which can efficiently prevent the developing solution from remaining on the backside surface of the wafer, so as to avoid the influence of the contamination on the subsequent processes. In one embodiment, a developing method comprises providing a wafer in a reaction space, wherein the wafer has an exposed photoresist thereon; coating a developing solution on a surface of the wafer; rotating the wafer; rinsing a normal surface and a backside surface of the wafer; and stopping rinsing the normal surface of the wafer while keeping rinsing the backside surface of the wafer for a specific time period.