Abstract: A semiconductor device includes a fin disposed on a substrate, a first dielectric layer disposed over the fin, a first contact extending through the first dielectric layer to a first depth and electrically coupled to the fin, and a second contact extending through the first dielectric layer to a second depth different than the first depth. The first contact has a first bottom portion having a first cross-sectional shape profile. The second contact being electrically isolated from the fin and having a second bottom portion having a second cross-sectional shape profile different than the first cross-sectional shape profile. The semiconductor device also includes a first protective layer disposed along the first contact without being disposed on at least a portion of the first bottom portion of the first contact, and a second protective layer disposed along the second contact including along the second bottom portion of the second contact.

Abstract: A method for semiconductor fabrication includes providing a device structure having an isolation structure, a fin adjacent the isolation structure, gate structures over the fin and the isolation structure, one or more dielectric layers over the isolation structure and the fin and between the gate structures, a first contact hole over the fin, and a second contact hole over the isolation structure. The method further includes depositing a protection layer and treating it with a plasma so that the protection layer in the first contact hole and the protection layer in the second contact hole have different etch selectivity in an etching process; and etching the protection layer to etch through the protection layer on the bottom surface of the first contact hole without etching through the protection layer on the bottom surface of the second contact hole.

Abstract: Phase-locked loops (PLLs) are provided. A PLL includes a voltage-controlled oscillator (VCO), a frequency divider and a track-and-hold charge pump. The VCO is configured to provide an output clock corresponding to a pumping current. The frequency divider is configured to provide a feedback signal according to the output clock. The track-and-hold charge pump is configured to provide the pumping current according to a reference clock and the feedback signal. The track-and-hold charge pump includes a track-and-hold circuit, a pumping switch and a pulse width modulator (PWM). The track-and-hold circuit is coupled to the frequency divider and configured to sample the feedback signal according to the reference clock. The PWM is configured to provide a PWM signal to control the pumping switch according to the reference clock, so as to provide the pumping current corresponding to the sampled feedback signal.

Abstract: Phase-locked loops (PLLs) are provided. A PLL includes a voltage-controlled oscillator (VCO), a frequency divider and a track-and-hold charge pump. The VCO is configured to provide an output clock corresponding to a pumping current. The frequency divider is configured to provide a feedback signal according to the output clock. The track-and-hold charge pump is configured to provide the pumping current according to a reference clock and the feedback signal. The track-and-hold charge pump includes a track-and-hold circuit, a pumping switch and a pulse width modulator (PWM). The track-and-hold circuit is coupled to the frequency divider and configured to sample the feedback signal according to the reference clock. The PWM is configured to provide a PWM signal to control the pumping switch according to the reference clock, so as to provide the pumping current corresponding to the sampled feedback signal.

Abstract: Phase-locked loops (PLLs) are provided. A PLL includes a voltage-controlled oscillator (VCO), a frequency divider, a track-and-hold charge pump, and a frequency tracking circuit. The VCO is configured to provide an output clock corresponding to a pumping current. The frequency divider is configured to divide the output clock to provide a feedback signal. The track-and-hold charge pump is configured to provide the pumping current according to a reference clock and the feedback signal. The frequency tracking circuit is configured to decrease frequency error between the feedback signal and the reference clock. The track-and-hold charge pump includes a pumping switch and a pulse width modulator (PWM). The PWM is configured to provide a PWM signal to control the pumping switch according to the reference clock, so as to provide the pumping current corresponding to the feedback signal.

Abstract: Phase-locked loops (PLLs) are provided. A PLL includes a voltage-controlled oscillator (VCO), a frequency divider, a track-and-hold charge pump, and a frequency tracking circuit. The VCO is configured to provide an output clock corresponding to a pumping current. The frequency divider is configured to divide the output clock to provide a feedback signal. The track-and-hold charge pump is configured to provide the pumping current according to a reference clock and the feedback signal. The frequency tracking circuit is configured to decrease frequency error between the feedback signal and the reference clock. The track-and-hold charge pump includes a pumping switch and a pulse width modulator (PWM). The PWM is configured to provide a PWM signal to control the pumping switch according to the reference clock, so as to provide the pumping current corresponding to the feedback signal.

Abstract: Track-and-hold charge pumps and PLL are provided. A track-and-hold charge pump includes a track-and-hold circuit, a transconductance amplifier, a pulse width modulator (PWM), and a pumping switch coupled to the transconductance amplifier. The track-and-hold circuit samples an input signal according to a reference clock. The transconductance amplifier converts the sampled input signal into a current. The PWM provides a PWM signal according to the reference clock. The pumping switch is controlled by the PWM signal, to provide an output current according to the current.

Abstract: Track-and-hold charge pumps and PLL are provided. A track-and-hold charge pump includes a track-and-hold circuit, a transconductance amplifier, a pulse width modulator (PWM), and a pumping switch coupled to the transconductance amplifier. The track-and-hold circuit samples an input signal according to a reference clock. The transconductance amplifier converts the sampled input signal into a current. The PWM provides a PWM signal according to the reference clock. The pumping switch is controlled by the PWM signal, to provide an output current according to the current.

Abstract: An example circuit includes: a slew rate driver configured to provide an output voltage; a first voltage provider configured to provide a first input voltage to the slew rate driver in response to the output voltage being within a first range; and a second voltage provider configured to provide a second input voltage to the slew rate driver in response to the output voltage being within a second range. The slew rate driver is further configured to change the output voltage based at least in part on the first input voltage or the second input voltage.

Abstract: An example circuit includes: a slew rate driver configured to provide an output voltage; a first voltage provider configured to provide a first input voltage to the slew rate driver in response to the output voltage being within a first range; and a second voltage provider configured to provide a second input voltage to the slew rate driver in response to the output voltage being within a second range. The slew rate driver is further configured to change the output voltage based at least in part on the first input voltage or the second input voltage.

Abstract: Among other things, one or more stacked semiconductor arrangements or techniques for applying voltage schemes to such stacked semiconductor arrangements is provided. A stacked semiconductor arrangement comprises one or more tiers, such as a first tier comprising a first semiconductor structure, a second tier comprising a second semiconductor structure, or other tiers. A first voltage domain is applied to the first tier, such as a first substrate voltage of 0v and a first power voltage of 1.6v. A second voltage domain is applied to the second tier, such as a second substrate voltage of 1.6v and a second power voltage of 3.3v. In this way, semiconductor structures having different operational voltages are separated into different tiers, such as to mitigate damage to a lower voltage integrated circuit from a relatively higher voltage for a higher voltage integrated circuit.

Abstract: Power supply regulators, integrated circuits including a power supply regulator, and methods of regulating a power supply are provided. In one embodiment, a power supply regulator includes a first self-bias circuit configured to receive a supply voltage from a power supply, a second self-bias circuit coupled to a reference voltage, and a clamping circuit coupled between the first and second self-bias circuits. The clamping circuit includes a NMOS transistor coupled to the first self-bias circuit and a PMOS transistor coupled to the second self-bias circuit. The clamping circuit is further configured to generate an output voltage less than the supply voltage at substantially the same time as when the supply voltage is received from the power supply.

Abstract: Among other things, one or more stacked semiconductor arrangements or techniques for applying voltage schemes to such stacked semiconductor arrangements is provided. A stacked semiconductor arrangement comprises one or more tiers, such as a first tier comprising a first semiconductor structure, a second tier comprising a second semiconductor structure, or other tiers. A first voltage domain is applied to the first tier, such as a first substrate voltage of 0 v and a first power voltage of 1.6 v. A second voltage domain is applied to the second tier, such as a second substrate voltage of 1.6 v and a second power voltage of 3.3 v. In this way, semiconductor structures having different operational voltages are separated into different tiers, such as to mitigate damage to a lower voltage integrated circuit from a relatively higher voltage for a higher voltage integrated circuit.

Abstract: Some aspects of this disclosure provide for electronic design automation (EDA) techniques that check whether individual blocks, such as transistors or other semiconductor devices, are connected to their correct power domains during design. In this way, the disclosed EDA techniques can limit or prevent overstress conditions applied to blocks and help to improve reliability of integrated circuits, when manufactured.

Abstract: Some aspects of this disclosure provide for electronic design automation (EDA) techniques that check whether individual blocks, such as transistors or other semiconductor devices, are connected to their correct power domains during design. In this way, the disclosed EDA techniques can limit or prevent overstress conditions applied to blocks and help to improve reliability of integrated circuits, when manufactured.

Abstract: Power supply regulators, integrated circuits including a power supply regulator, and methods of regulating a power supply are provided. In one embodiment, a power supply regulator includes a first self-bias circuit configured to receive a supply voltage from a power supply, a second self-bias circuit coupled to a reference voltage, and a clamping circuit coupled between the first and second self-bias circuits. The clamping circuit includes a NMOS transistor coupled to the first self-bias circuit and a PMOS transistor coupled to the second self-bias circuit. The clamping circuit is further configured to generate an output voltage less than the supply voltage at substantially the same time as when the supply voltage is received from the power supply.

Abstract: An output driver having a power supply line, a control switch, at least one protection device and at least one voltage clamp device. The control switch disposed between the at least one protection device and the power supply line an output line. The at least one protection device disposed in a series arrangement between the output line and the control switch. The at least one voltage clamp device disposed across a corresponding protection device and adapted to clamp a voltage across the protection device below a predetermined threshold voltage.

Abstract: A current mode trimming apparatus for trimming a desired current is provided. The trimming apparatus includes a first transistor, a first resistor, an operational amplifier, a first controlled current source, and a second controlled current source. The first and second controlled current sources adjust the output current thereof respectively in accordance with the trimming data. The desired current passing through the first transistor is trimmed in a manner of increasing or decreasing current. Therefore, the invention can linearly increase or decrease the desired current by controlling the controlled current sources with the trimming data to achieve the goal of trimming.