Abstract: A semiconductor manufacturing system includes an operating terminal, a first controller, and a plurality of second controllers. The operating terminal controls a main controller. Each of the plurality of second controllers is electrically connected to the first controller. In an initial or default state, the operating terminal controls the first controller as a main controller, and when the first controller fails, the operating terminal controls one of the plurality of the second controllers as a main controller, the others of the plurality of second controllers being controlled by the main controller.

Abstract: A front opening unified pod (FOUP) loading and air filling system comprises a FOUP loading device and an air filling device. The FOUP loading device is configured to load and unload a FOUP, and comprises a substrate and a controller. The substrate comprises a frame, a bearing platform installed on the frame, and a cavity under the bearing platform. The bearing platform is configured to support the FOUP. The controller and the air filling device are accommodated in the cavity. The air filling device is connected to the FOUP.

Abstract: A wafer supporting system includes a supporting pedestal. The supporting pedestal includes a main supporting body and a hollow frame surrounding the supporting pedestal. The main supporting body includes a top surface and a bottom surface opposite to the top surface, the top surface defined a plurality of vent grooves and a plurality of holding grooves. The main supporting body includes a plurality of holding channels extending through from the bottom surface to the holding grooves and a plurality of first through holes pass through from the top surface to the bottom surface, each holding groove is surrounded by a plurality of first through holes; an inner side surface of the hollow frame and a side wall of the supporting pedestal form a gap, and a plurality of exhaust cylinders are arranged in the annular gap and each exhaust cylinder is communicated with each vent groove.

Abstract: A reflective exposure apparatus includes a platform, an illuminating system, a photomask, a chip, and a reflecting convex mirror. The photomask is formed on the platform and faces the illuminating system. The chip is formed on the platform. The illuminating system and the reflecting curved mirror are formed on opposite sides of the platform. The platform can be moved relative to the illuminating system and the reflecting curved mirror.

Abstract: An exemplary method for laser machining is provided comprising: providing a workpiece, the workpiece including a predetermined machining region; loading the workpiece onto a laser machining station, the laser machining station being configured for providing an initial ambient temperature for the workpiece; heating the machining region of the workpiece up to a predetermined temperature between the initial ambient temperature and a melting temperature of a material of the workpiece; and machining the machining region with at least one laser beam. An exemplary apparatus for laser machining is also provided.

Abstract: A method for processing a brittle substrate includes first providing a brittle substrate having a substrate surface. Then applying a first laser beam onto the brittle substrate surface to form a pre-cut groove in the brittle substrate, the first laser beam being generated by a solid-state laser device. A second laser beam is then applied onto the brittle substrate surface along the precut groove to heat the brittle substrate, the second laser beam being generated by a gas laser device. Finally, a coolant is applied onto the brittle substrate along the pre-cut groove so as to cause formation of a through crack in the brittle substrate. The first laser beam can be generated by a solid-state laser device, the first laser beam should be of narrow diameter and high energy density, so the first laser beam can form a pre-cut groove rapidly and accurately without generation of micro-cracks, in addition, the pre-cut groove should have a better uniformity and linearity.

Abstract: A sintered silicon carbide (SiC) body prepared by a process which contains the steps of: (a) preparing a raw batch containing: (i) a raw silicon carbide mixture containing about 10 to about 90 weight percent of an .alpha.-phase SiC powder and about 90 to about 10 weight percent of a .beta.-phase SiC powder; (ii) aluminum oxide (Al.sub.2 O.sub.3) powder, about 3 to 15 weight percent of the raw silicon carbide mixture; (iii) yttrium oxide (Y.sub.2 O.sub.3) powder, about 2 to 10 weight percent of the raw silicon carbide mixture; (iv) an organic binding agent and a dispersing agent; and (v) deionized water; (b) drying the raw batch to form a green body; (c) heating the green body at temperatures between about 400.degree. and 800.degree. C. to remove the organic binding agent and the dispersing agent; and (d) subjecting the green body to a two-stage pressureless sintering process, first at a first sintering temperature between about 1,800.degree. and about 1,950.degree. C. for 0.5 to 8.

Abstract: A heat treatment method is disclosed for improving the strength and the toughness of particle reinforced alumina composite. A densified alumina composite is heated to a temperature of higher than 600.degree. C., maintained at that temperature for about 0.5-150 hours, and then the temperature is lowered to room temperature. As a result, the flexure strength and the fracture tougnness of the particle reinforced alumina composite are substantially increased after the heat treatment in comparison to those without heat treatment.