Abstract: A joint test action group transmission system includes a host terminal and a slave terminal. The slave terminal includes a test access port (TAP) circuit, an internal memory, and a memory interface controller. The TAP circuit includes a test data register set. The memory interface controller stores the data received from the TAP circuit to the internal memory. The host terminal transmits a set of download instruction bits to the TAP circuit to have the TAP circuit select the test data register set, and have the TAP circuit enter a data shift status to receive a data package through the test data register set. During the process of receiving the data package, the TAP circuit remains in the data shift status to receive the address and at least one piece of data stored in the data package continuously.

Abstract: A direct memory access (DMA) controller, an electronic device that uses the DMA controller, and a method of operating the DMA controller are provided. The DMA controller is configured to access a memory that contains a privilege area and a normal area. The method of operating the DMA controller includes the following steps: searching for a DMA channel that is in an idle state in the DMA controller; setting a register value of a mode register of the DMA channel such that the DMA channel operates in a privilege mode; setting a memory address register and a byte count register of the DMA channel; and controlling the DMA channel to transfer data based on the memory address register and the byte count register.

Abstract: A direct memory access (DMA) controller, an electronic device that uses the DMA controller, and a method of operating the DMA controller are provided. The DMA controller is configured to access a memory that contains a secure area and a non-secure area. The method of operating the DMA controller includes the following steps: searching for a DMA channel that is in an idle state in the DMA controller; setting a register value of a mode register of the DMA channel such that the DMA channel operates in a secure mode; setting a memory address register and a byte count register of the DMA channel; and controlling the DMA channel to transfer data based on the memory address register and the byte count register.

Abstract: The present disclosure provides a control module and a control method thereof for an SDRAM. The control module includes a register and a controller. The controller is configured to: select a first command, wherein the first command includes at least two first memory commands; execute one of the at least two first memory commands; store an un-executed memory command of the at least two first memory commands in a register and back the un-executed memory command up as at least one first back-up memory command; select a second command, wherein the first command and the second command are stored in different memory bank groups; and execute the second command.

Abstract: A direct memory access (DMA) controller, an electronic device that uses the DMA controller, and a method of operating the DMA controller are provided. The DMA controller is configured to access a memory that contains a privilege area and a normal area. The method of operating the DMA controller includes the following steps: searching for a DMA channel that is in an idle state in the DMA controller; setting a register value of a mode register of the DMA channel such that the DMA channel operates in a privilege mode; setting a memory address register and a byte count register of the DMA channel; and controlling the DMA channel to transfer data based on the memory address register and the byte count register.

Abstract: A direct memory access (DMA) controller, an electronic device that uses the DMA controller, and a method of operating the DMA controller are provided. The DMA controller is configured to access a memory that contains a secure area and a non-secure area. The method of operating the DMA controller includes the following steps: searching for a DMA channel that is in an idle state in the DMA controller; setting a register value of a mode register of the DMA channel such that the DMA channel operates in a secure mode; setting a memory address register and a byte count register of the DMA channel; and controlling the DMA channel to transfer data based on the memory address register and the byte count register.

Abstract: A data transmission system includes a host, a universal serial bus (USB) interface adaptor, a first-in first-out (FIFO) interface adaptor, a plurality of functional circuits, and a bus bridge circuit. The host accesses data according to the communications protocols of USB. The USB interface adaptor accesses data through a first port according to the communications protocols of USB, and accesses data through a second port according to the communications protocols of FIFO. The FIFO interface adaptor accesses data through a third port coupled to the second port according to the communications protocols of FIFO, and accesses data through a fourth port according to the communications protocols of a specific type of bus. The bus bridge circuit transmits the data received from the fourth port to a functional circuit according to the communications protocols of the specific type of bus.

Abstract: A data transmission system includes a host, a universal serial bus (USB) interface adaptor, a first-in first-out (FIFO) interface adaptor, a plurality of functional circuits, and a bus bridge circuit. The host accesses data according to the communications protocols of USB. The USB interface adaptor accesses data through a first port according to the communications protocols of USB, and accesses data through a second port according to the communications protocols of FIFO. The FIFO interface adaptor accesses data through a third port coupled to the second port according to the communications protocols of FIFO, and accesses data through a fourth port according to the communications protocols of a specific type of bus. The bus bridge circuit transmits the data received from the fourth port to a functional circuit according to the communications protocols of the specific type of bus.

Abstract: A joint test action group transmission system includes a host terminal and a slave terminal. The slave terminal includes a test access port (TAP) circuit, an internal memory, and a memory interface controller. The TAP circuit includes a test data register set. The memory interface controller stores the data received from the TAP circuit to the internal memory. The host terminal transmits a set of download instruction bits to the TAP circuit to have the TAP circuit select the test data register set, and have the TAP circuit enter a data shift status to receive a data package through the test data register set. During the process of receiving the data package, the TAP circuit remains in the data shift status to receive the address and at least one piece of data stored in the data package continuously.

Abstract: A method for cleaning a cache of a processor includes: generating a specific command according to a request, wherein the specific command includes an operation command, a first field and a second field; obtaining an offset and a starting address according to the first field and the second field; selecting a specific segment from the cache according to the starting address and the offset; and cleaning data stored in the specific segment.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract: An exemplary scan clock generator for providing a plurality of on-chip scan clocks to a plurality of cells under test includes: a receiving circuit, arranged for receiving an off-chip scan clock; and a clock processing circuit, coupled to the receiving circuit and arranged for generating the on-chip scan clocks according to the received off-chip scan clock; wherein clock edges of the on-chip scan clocks are staggered from each other, and the scan clock generator and the cells under test are set in a same chip.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening by a metal deposition process employing a target which includes metal and silicon. The metal-silicide layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening by a metal deposition process employing a target which includes metal and silicon. The metal-silicide layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.

Abstract: A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.