Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.

Abstract: An image sensor includes a semiconductor substrate and a toric microlens. The semiconductor substrate includes a pixel array having a plurality of rows of pixels and a plurality of columns of pixels. A pixel cell of the pixel array includes one or more pixels of the pixel array. The toric microlens is disposed on the semiconductor substrate and directly above a corresponding pixel cell of the pixel array.

Abstract: The invention discloses a method for fabricating pixels in an image sensor capable of detecting infrared light. A planarized dielectric layer is first formed on a first surface of a semiconductor substrate having a first photodiode and a second photodiode adjacent to the first photodiode. A recessed region is then formed in the planarized dielectric layer aligned with the second photodiode. Subsequently, a first color filter material is deposited on the planarized dielectric layer to form a first color filter aligned with the first photodiode. Thereafter, a second color filter material is deposited on the planarized dielectric layer and in the recessed region to form a second color filter aligned with the second photodiode. The first thickness of the first color filter is less than a second thickness of the second color filter.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: Provided are a semiconductor structure for a three-dimensional (3D) memory and a manufacturing method thereof. The semiconductor structure may be used in a 3D AND flash memory. The semiconductor structure includes a substrate, an insulating wall and a stacked structure. The substrate has an array region and a staircase region surrounding the array region. The insulating wall is disposed on the substrate and surrounds the array region and the staircase region. The stacked structure is disposed on the substrate in the array region and the staircase region, and includes a plurality of insulating layers and a plurality of conductive layers alternately stacked. The plurality of insulating layers and the plurality of conductive layers extend conformally onto the insulating wall.

Abstract: A phase detection autofocus (PDAF) pixel cell and an image sensor including a PDAF pixel cell is described. The PDAF pixel cell includes a photosensitive region including one or more photodiodes formed within a semiconductor material proximate to a backside surface of the semiconductor material, a microlens optically aligned with the photosensitive region; and a spectral filter disposed between the microlens and the metal shield. A first lateral width of the spectral filter is less than a second lateral width of the metal shield along a direction parallel to the backside surface to form a gap extending from an edge of the spectral filter toward an edge of the metal shield when viewed from a plan view.

Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate having a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter is disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter is disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.

Abstract: A storage environment monitoring device is capable of measuring and/or monitoring various parameters of an environment inside a storage area, such as airflow, temperature, and humidity, to increase the storage quality of semiconductor components stored in the storage area. The storage environment monitoring device is capable of measuring and/or monitoring the parameters of the environment inside the storage area without having to open an enclosure that is storing the semiconductor components in the storage area. This reduces exposure of the semiconductor components to contamination and other environmental factors.

Abstract: A storage environment monitoring device is capable of measuring and/or monitoring various parameters of an environment inside a storage area, such as airflow, temperature, and humidity, to increase the storage quality of semiconductor components stored in the storage area. The storage environment monitoring device is capable of measuring and/or monitoring the parameters of the environment inside the storage area without having to open an enclosure that is storing the semiconductor components in the storage area. This reduces exposure of the semiconductor components to contamination and other environmental factors.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.

Abstract: The invention disclose a pixel in an image sensor capable of detecting infrared light and associated fabrication method. The image sensor includes a semiconductor substrate has a first photodiode and a second photodiode adjacent to the first photodiode. A planarized dielectric layer having a recessed region is disposed on a first side of the semiconductor substrate. A first color filter disposed on the planarized dielectric layer aligned with the first photodiode and configured to transmit light of a first wavelength range. A second color filter disposed in the recessed region and on the planarized dielectric layer. The second color filter is aligned with the second photodiode, and configured to transmit light of a second wavelength range that is different from the first wavelength range. A first depth-wise thickness of the first color filter is less than a second depth-wise thickness of the second color filter.

Abstract: A method for operating a conveying system is provided. An overhead hoist transport (OHT) vehicle is provided, wherein the OHT vehicle includes a gripping member configured to grip and hold a carrier, and a receiver configured to receive a signal. The signal is transmitted to the receiver of the OHT vehicle. The OHT vehicle is moved toward the carrier, and the carrier is gripped by the gripping member of the OHT vehicle. A lifting force is determined based on a weight of a carrier, a number of workpieces in the carrier, or a vertical distance between the OHT vehicle and the carrier, and the lifting force is applied to the carrier.

Abstract: A storage environment monitoring device is capable of measuring and/or monitoring various parameters of an environment inside a storage area, such as airflow, temperature, and humidity, to increase the storage quality of semiconductor components stored in the storage area. The storage environment monitoring device is capable of measuring and/or monitoring the parameters of the environment inside the storage area without having to open an enclosure that is storing the semiconductor components in the storage area. This reduces exposure of the semiconductor components to contamination and other environmental factors.

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.

Abstract: A flare-suppressing image sensor includes a first pixel formed in a substrate and a refractive element located above the first pixel. The refractive element has, with respect to a top surface of the substrate, a height profile having at least two one-dimensional local maxima in each of a first cross-sectional plane and a second cross-sectional plane perpendicular to the first cross-sectional plane. Each of the first and second cross-sectional planes is perpendicular to the top surface and intersects the first pixel.

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

Abstract: An image sensor includes a photodiode array and a color filter array optically aligned with the photodiode array. The photodiode array includes a plurality of photodiodes disposed within respective portions of a semiconductor material. The color filter array includes a plurality of color filters arranged to form a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first color filter with a red spectral photoresponse, a second color filter with a yellow spectral photoresponse, and a third color filter with a panchromatic spectral photoresponse.