Patents by Inventor CHEN WEI SHIH

CHEN WEI SHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9680030
    Abstract: An enhancement-mode n-type field effect transistor is disclosed to have a metal oxide channel layer, a gate dielectric layer, a gate electrode, a source electrode, and a drain electrode. The metal oxide channel layer has a material selected from SnO2, ITO, ZnO, SnO2 and In2O3. The metal oxide channel layer has a thickness less than a threshold value to exhibit pinch-off behavior in transfer characteristics and has a mobility trend without saturation under positive operational voltage.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: June 13, 2017
    Assignee: Advanced Device Research Inc.
    Inventors: Chen-Wei Shih, Albert Chin
  • Publication number: 20170162570
    Abstract: A complementary transistor pair with an n-type enhancement-mode field effect transistor and a p-type field effect transistor is disclosed. The n-type enhancement-mode field effect transistor uses a metal oxide channel layer having a material selected from SnO2, ITO, ZnO, SnO2 and In2O3 while the p-type field effect transistor uses a germanium-containing channel layer.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 8, 2017
    Inventors: Chen-Wei Shih, Albert Chin
  • Publication number: 20170162710
    Abstract: A method for fabricating an enhancement-mode n-type field effect transistor is disclosed. The method involves forming a metal oxide channel layer, forming a gate dielectric layer, forming a gate electrode, and forming a source electrode and a drain electrode. The metal oxide channel layer has a material selected from SnO2, ITO, ZnO, SnO2 and In2O3 with a thickness less than a threshold value. With the thickness less than the threshold value the metal oxide channel layer exhibits pinch-off behavior in transfer characteristics and has a mobility trend without saturation under positive operational voltage.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 8, 2017
    Inventors: Chen-Wei Shih, Albert Chin
  • Publication number: 20170162698
    Abstract: An enhancement-mode n-type field effect transistor is disclosed to have a metal oxide channel layer, a gate dielectric layer, a gate electrode, a source electrode, and a drain electrode. The metal oxide channel layer has a material selected from SnO2, ITO, ZnO, SnO2 and In2O3. The metal oxide channel layer has a thickness less than a threshold value to exhibit pinch-off behavior in transfer characteristics and has a mobility trend without saturation under positive operational voltage.
    Type: Application
    Filed: December 2, 2015
    Publication date: June 8, 2017
    Inventors: Chen-Wei Shih, Albert Chin
  • Patent number: 8871234
    Abstract: Disclosed herein are UV-resistant gelatin/silica coated viral particles, methods for producing the same, and methods for controlling agricultural insect pests using the UV-resistant gelatin/silica coated viral particles.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: October 28, 2014
    Assignee: National Taiwan University
    Inventors: Chen Wei Shih, Hong-Ping Lin, Wen-Jer Wu, Shiang-Jiuun Chen, Rong-Nan Huang
  • Publication number: 20140086969
    Abstract: Disclosed herein are UV-resistant gelatin/silica coated viral particles, methods for producing the same, and methods for controlling agricultural insect pests using the UV-resistant gelatin/silica coated viral particles.
    Type: Application
    Filed: September 25, 2012
    Publication date: March 27, 2014
    Applicant: National Taiwan University
    Inventors: CHEN WEI SHIH, Hong-Ping Lin, Wen-Jer Wu, Shiang-Jiunn Chen, Rong-Nan Huang