Abstract: The present invention relates to an electrochemical machining apparatus for gear outline, which is used for trimming the gear outline of the gear part of a workpiece and comprises a first moving mechanism, a second moving mechanism, a cathode electrode, and a gear alignment member. The cathode electrode is disposed at the first moving mechanism. The second moving mechanism is connected with the gear alignment member. The gear alignment member includes a plurality of alignment gears for aligning the location of a plurality of teeth of the gear part of the workpiece. Thereby, the plurality of teeth of the workpiece may correspond to the cathode electrode. Then, the cathode electrode may perform electrochemical machining on the plurality of teeth, and thus, trimming the outline of the plurality of teeth.

Abstract: The present invention relates to an electrochemical machining device, which comprises a machining electrode, a driving module, a spacer, and a conductive electrode. The machining electrode includes an electrochemical machining zone. The driving module drives the machining electrode. The spacer is adjacent to the machining electrode. The conductive electrode is adjacent to the spacer. The spacer spaces the conductive electrode and the machining electrode. When the electrochemical machining device performs electrochemical processes, the driving module drives the machining electrode and moves a machining surface of the machining electrode.

Abstract: The present invention relates to a transmission apparatus, which comprises a base, a transmission module, a first protection sleeve, and a second protection sleeve. The transmission module is disposed on the base and includes a moving unit. The first protection sleeve is disposed around the outer periphery of the transmission module and on the base. One end of the second protection sleeve is covered by the first protection sleeve. The second protection sleeve is disposed around the moving unit and moves linkedly along the moving unit. Thereby, the transmission apparatus according to the present invention may protection the transmission module.

Abstract: The present invention provides an inductive electrochemical machining device, which comprises a base, an inductive machining electrode, and a negative cleaning module. The base includes a workpiece machining zone. The inductive machining electrode is disposed on the base and corresponds to said workpiece machining zone. The negative cleaning module is opposing to the inductive machining electrode. When the inductive machining electrode performs electrochemical machining, the generated induction current may be used for machining. In addition, the surface of the inductive machining electrode may be cleaned concurrently by the negative cleaning module.

Abstract: The present invention relates to a continuous electrochemical processing apparatus, which comprises an electrode transport module, an electrode module, and a material-tape conveying mechanism. The electrode module is connected with the electrode transport module and includes an electrode. The material-tape conveying mechanism is disposed corresponding to the electrode module and used for conveying a material tape. Thereby, the electrode of the electrode module may continuously electrochemical process the material tape.

Abstract: The present invention relates to an electrochemical processing system. The electrochemical processing system comprises a belt electrode and a clean module. The clean module is corresponding to one side of the belt electrode. The electrochemical processing system may be used for cleaning the surface of the belt electrode during an electrochemical process.

Abstract: A driving circuit includes: a switching element having a first terminal to receive an input voltage, and a second terminal; an inductor coupled to the second terminal of the switching element; a switch and a current sensing element coupled in series to the second terminal of the switching element; and a control module compensating a voltage sensed by the current sensing element based on at least one of the input voltage and an output voltage across the switching element and the inductor to generate a compensated signal, and switching the switch from an ON state to an OFF state when the compensated signal exceeds a reference threshold for a delay time.

Abstract: A driving circuit includes: a switching element having a first terminal to receive an input voltage, and a second terminal; an inductor coupled to the second terminal of the switching element; a switch and a current sensing element coupled in series to the second terminal of the switching element; and a control module compensating a voltage sensed by the current sensing element based on at least one of the input voltage and an output voltage across the switching element and the inductor to generate a compensated signal, and switching the switch from an ON state to an OFF state when the compensated signal exceeds a reference threshold for a delay time.

Abstract: Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+ doped drain region is disposed in the high-V N-well. A P+ diffused region and an N+ doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+ doped source region and the other end extending over the insulation region.

Abstract: Disclosed is a microfluidic chip and method using the same. The microfluidic chip comprises a substrate having a surface, and at least a tissue culture area formed on the surface of the substrate. The tissue culture area has a microfluidic channel formed by a plurality of connected geometrical structures (nozzle-type channels) having a predetermined depth. The microfluidic channel has an inlet and an outlet, which are at two ends of the microfluidic channel, for medium inputting and outputting, respectively. Additionally, at least an air-exchange hole is formed on the bottom of the microfluidic channel. By using the microfluidic chip for tissue culture, lateral flow speed and stress can be decreased, so as to prolong survival time of tissues (e.g. liver tissues).

Abstract: A turbine intake pressure release structure to control pressure release between a throttle and a first turbine boosted pressure outlet includes a pressure release valve which has a first pressure orifice, a second pressure orifice and a housing chamber, at least one controller which has a pressure detection end and a driven portion and a switch duct which has a first end opening, a second end opening and a third end opening. The first end opening is connected to a third turbine boosted pressure outlet. The second end opening leads to the atmosphere. The third end opening is connected to the second pressure orifice. The driven portion runs through the switch duct to close the second end opening through the driven portion drive a membrane to a first position or closes the first end opening through the driven portion to drive the membrane to a second position.

Abstract: Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+ doped drain region is disposed in the high-V N-well. A P+ diffused region and an N+ doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+ doped source region and the other end extending over the insulation region.

Abstract: Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+ doped drain region is disposed in the high-V N-well. A P+ diffused region and an N+ doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+ doped source region and the other end extending over the insulation region.

Abstract: A turbine intake pressure release structure to control pressure release between a throttle and a first turbine boosted pressure outlet includes a pressure release valve which has a first pressure orifice, a second pressure orifice and a housing chamber, at least one controller which has a pressure detection end and a driven portion and a switch duct which has a first end opening, a second end opening and a third end opening. The first end opening is connected to a third turbine boosted pressure outlet. The second end opening leads to the atmosphere. The third end opening is connected to the second pressure orifice. The driven portion runs through the switch duct to close the second end opening through the driven portion drive a membrane to a first position or closes the first end opening through the driven portion to drive the membrane to a second position.

Abstract: Disclosed is a microfluidic chip and method using the same. The microfluidic chip comprises a substrate having a surface, and at least a tissue culture area formed on the surface of the substrate. The tissue culture area has a microfluidic channel formed by a plurality of connected geometrical structures (nozzle-type channels) having a predetermined depth. The microfluidic channel has an inlet and an outlet, which are at two ends of the microfluidic channel, for medium inputting and outputting, respectively. Additionally, at least an air-exchange hole is formed on the bottom of the microfluidic channel. By using the microfluidic chip for tissue culture, lateral flow speed and stress can be decreased, so as to prolong survival time of tissues (e.g. liver tissues).

Abstract: Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices are presented. An IGBT-ESD device includes a semiconductor substrate and patterned insulation regions disposed on the semiconductor substrate defining a first active region and a second active region. A high-V N-well is formed in the first active region of the semiconductor substrate. A P-body doped region is formed in the second active region of the semiconductor substrate, wherein the high-V N-well and the P-body doped region are separated with a predetermined distance exposing the semiconductor substrate. A P+ doped drain region is disposed in the high-V N-well. A P+ diffused region and an N+ doped source region are disposed in the P-body doped region. A gate structure is disposed on the semiconductor substrate with one end adjacent to the N+ doped source region and the other end extending over the insulation region.