Patents by Inventor Chen-Wen Tsai
Chen-Wen Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060273441Abstract: Disclosed is an assembly structure of chip scale package, which can effectively avoid various yield and quality problems resulted from the poor control of epoxy during the process of chip scale package. A buffer zone whose planar size is smaller than that of the chip is disposed on the substrate, and the chip is then affixed to the buffer zone utilizing epoxy. Since the planar size of the buffer zone is smaller than that of the chip, the contamination of golden fingers and bonding pads due to the poor control of epoxy can be avoided, and furthermore the yield problems resulted from failed wire bonding and poor soldering are avoided. The assembly structure can be further applied to vertical stacking of multiple chips. A packaging method for the chip scale package is also provided.Type: ApplicationFiled: June 4, 2005Publication date: December 7, 2006Inventors: Yueh-Chiu Chung, Sheng-Chang Lin, Chen-Wen Tsai
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Patent number: 6838756Abstract: A chip-packaging substrate. The substrate is capable of reducing damage during packaging, shrinking its connecting portions so that the length of any of the gap slots between the packaging portion and the frame portion of the substrate is increased. Furthermore, a dummy layer is provided to one surface of the frame portion to flush the surface on the frame portion with that of the packaging portion as much as possible.Type: GrantFiled: August 26, 2002Date of Patent: January 4, 2005Assignee: Silicon Integrated Systems Corp.Inventors: Wei-Feng Lin, Chung-Ju Wu, Chen-Wen Tsai
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Patent number: 6653574Abstract: A multi-layered substrate having built-in capacitors is disclosed. The substrate comprises at least one high permittivity of dielectric material filled in the through holes between the power plane and the ground plane so as to form capacitors. The built in capacitors are to decouple high frequency noise due to the voltage fluctuation.Type: GrantFiled: August 23, 2001Date of Patent: November 25, 2003Assignee: Silicon Integrated Systems CorporationInventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Publication number: 20030075781Abstract: A chip-packaging substrate. The substrate is capable of reducing damage during packaging, shrinking its connecting portions so that the length of any of the gap slots between the packaging portion and the frame portion of the substrate is increased. Furthermore, a dummy layer is provided to one surface of the frame portion to flush the surface on the frame portion with that of the packaging portion as much as possible.Type: ApplicationFiled: August 26, 2002Publication date: April 24, 2003Inventors: Wei-Feng Lin, Chung-Ju Wu, Chen-Wen Tsai
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Patent number: 6524942Abstract: A bond pad structure and a method of fabricating such structure are disclosed in the invention. The bond pad structure is formed over a predetermined area defined on a semiconductor substrate. The bond pad structure includes at least two metal layers formed over the predetermined area and at least one sub-structure combination layer which each is formed over the predetermined area and formed between two corresponding first metal layers. Each sub-structure combination layer includes a dielectric layer formed over the predetermined area, formed-through via openings with special disposition on the dielectric layer, a first diffusion barrier layer formed over the dielectric layer and the sidewalls and bottom of the via openings, a metal material filled into the via openings to form via plugs, and a second diffusion barrier layer formed over the first diffusion barrier layer and via plugs.Type: GrantFiled: January 28, 2002Date of Patent: February 25, 2003Assignee: Silicon Integrated Systems Corp.Inventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Patent number: 6509646Abstract: An apparatus for reducing an electrical noise inside a ball grid array package is disclosed. The apparatus mainly comprises a substrate, a plurality of solder balls and a plurality of inside-connected capacitors. The substrate includes a contact layer, a power plane and a ground plane. The plurality of solder balls are fixed on the contact layer. The plurality of inside-connected capacitors are fixed on the contact layer, and a conductive glue is used to electrically connect the capacitors to the power plane and ground plane to reduce the electrical noise between the power plane and ground plane.Type: GrantFiled: May 22, 2000Date of Patent: January 21, 2003Assignee: Silicon Integrated Systems Corp.Inventors: Wei-Feng Lin, Chung-Ju Wu, Chen-Wen Tsai
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Patent number: 6498505Abstract: A testing jig for semiconductor components, mainly comprising a main jig body, wherein on its bottom is provided with a retrieving head. While on the center of the bottom of the retrieving head is provided with a concave space, around which is arranged a plurality of air holes which are connected with the internal airways and also connected with the air inlet on the top of the main body. Furthermore, on the bottom of the main jig body is provided with two buffer blocks on opposite sides, which can prevent the chip on the center of the base board from being contacted with external force or foreign objects in the process of retrieving the base board during testing.Type: GrantFiled: March 8, 2001Date of Patent: December 24, 2002Assignee: Silicon Integrated Systems CorporationInventors: Mu-Sheng Liao, Wei-Feng Lin, Chen-Wen Tsai, Ching-Jung Huang
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Publication number: 20020163073Abstract: A multi-layer substrate for an IC chip having a plurality of pads comprises a first layer having a plurality of conducting lines electrically connected to the pads of the IC chip, whereby a first current is generated in the conducting lines, and a second layer has a ground plane electrically connected to a ground, and a plurality of via holes penetrating the second layer and the conducting plane, wherein the via holes are arranged to make a second current in the conducting plane induced by the first current flowing to the ground.Type: ApplicationFiled: August 14, 2001Publication date: November 7, 2002Inventors: Chung-Ju Wu, Chia-Wen Shih, Chen-Wen Tsai, Wei-Feng Lin
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Publication number: 20020125902Abstract: The present invention relates to a testing jig for semiconductor components, mainly comprising a main jig body, wherein on its bottom is provided with a retrieving head. While on the center of the bottom of the retrieving head is provided with a concave space, around which is arranged a plurality of air holes which are connected with the internal airways and also connected with the air inlet on the top of the main body. Furthermore, on the bottom of the main jig body is provided with two buffer blocks on opposite sides, which can prevent the chip on the center of the base board from being contacted with external force or foreign objects in the process of retrieving the base board during testing.Type: ApplicationFiled: March 8, 2001Publication date: September 12, 2002Inventors: Mu-Sheng Liao, Wei-Feng Lin, Chen-Wen Tsai, Ching-Jung Huang
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Patent number: 6423577Abstract: A method for reducing electrical noise inside a ball grid array package for installing capacitors between a plurality of power pads and ground pads on a top side of a substrate of the ball grid array package coats solder paste on the plurality of power pads and ground pads, coats adhesive glue beneath the plurality of capacitors, fixes the plurality of capacitors on the power pads and ground pads with the adhesive glue and solder paste, and solidifies the adhesive glue in a reflow soldering stove.Type: GrantFiled: May 2, 2000Date of Patent: July 23, 2002Assignee: Silicon Integrated Systems Corp.Inventors: Cheng-Chung Cheng, Chen-Wen Tsai, Chia-Wen Shih
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Publication number: 20020064932Abstract: A bond pad structure and a method of fabricating such structure are disclosed in the invention. The bond pad structure is formed over a predetermined area defined on a semiconductor substrate. The bond pad structure includes at least two metal layers formed over the predetermined area and at least one sub-structure combination layer which each is formed over the predetermined area and formed between two corresponding first metal layers. Each sub-structure combination layer includes a dielectric layer formed over the predetermined area, formed-through via openings with special disposition on the dielectric layer, a first diffusion barrier layer formed over the dielectric layer and the sidewalls and bottom of the via openings, a metal material filled into the via openings to form via plugs, and a second diffusion barrier layer formed over the first diffusion barrier layer and via plugs.Type: ApplicationFiled: January 28, 2002Publication date: May 30, 2002Inventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Patent number: 6395996Abstract: A multi-layered substrate having built-in capacitors is used to decouple high frequency noise generated by voltage fluctuations between a power plane and a ground plane of a multi-layered substrate. At least one kind of dielectric material, which is filled in through holes between the power plane and the ground plane, with high dielectric constant is used to form the built-in capacitors.Type: GrantFiled: May 16, 2000Date of Patent: May 28, 2002Assignee: Silicon Integrated Systems CorporationInventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Publication number: 20020054467Abstract: A multi-layered substrate having built-in capacitors is disclosed. The substrate comprises at least one high permittivity of dielectric material filled in the through holes between the power plane and the ground plane so as to form capacitors. The built in capacitors are to decouple high frequency noise due to the voltage fluctuation.Type: ApplicationFiled: August 23, 2001Publication date: May 9, 2002Applicant: Silicon Integrated Systems CorporationInventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Patent number: 6365970Abstract: A bond pad structure and a method of fabricating such structure are disclosed in the invention. The bond pad structure is formed over a predetermined area defined on a semiconductor substrate. The bond pad structure includes at least two metal layers formed over the predetermined area and at least one sub-structure combination layer which each is formed over the predetermined area and formed between two corresponding first metal layers. Each sub-structure combination layer includes a dielectric layer formed over the predetermined area, formed-through via openings with special disposition on the dielectric layer, a first diffusion barrier layer formed over the dielectric layer and the sidewalls and bottom of the via openings, a metal material filled into the via openings to form via plugs, and a second diffusion barrier layer formed over the first diffusion barrier layer and via plugs.Type: GrantFiled: December 10, 1999Date of Patent: April 2, 2002Assignee: Silicon Integrated Systems CorporationInventors: Chen-Wen Tsai, Chung-Ju Wu, Wei-Feng Lin
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Patent number: 6116427Abstract: A tray is adapted to receive a plurality of ball grid array devices therein, and includes a base plate having a device-receiving portion and a peripheral portion around the device-receiving portion. The device-receiving portion has a top side formed with a device-receiving recess. The top side of the device-receiving portion is further formed with a partition unit in the device-receiving recess for dividing the device-receiving recess into a plurality of cavities adapted for receiving the ball grid array devices respectively therein. The device-receiving portion further has a bottom side formed with a plurality of openings. Each of the openings is aligned with a corresponding one of the cavities and is adapted to receive an array of ball contacts formed on a bottom side of the ball grid array device that is disposed in the corresponding one of the cavities therein.Type: GrantFiled: January 31, 2000Date of Patent: September 12, 2000Assignee: Silicon Integrated Systems Corp.Inventors: Chung-Ju Wu, Wei-Feng Lin, Chen-Wen Tsai
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Patent number: 5219802Abstract: Porous ceramic composition comprises 24-45 wt % of gairome, 25-45 wt % of chamotte, 2-10 wt % of low thermal expansivity component, 2-10 wt % of mineralizing agents, and 15-30 wt % of at least two kinds of organic components which provide porosity. The porous ceramic radiation plate is produced by sintering the composition, and the end result is a product that is high in quality and has an efficient thermal radiation transfer.Type: GrantFiled: May 4, 1992Date of Patent: June 15, 1993Assignee: Industrial Technology Research InstituteInventors: Ching-Sung Hsiao, Chen-Wen Tsai