Abstract: Embodiments of present disclosure relates to forming isolation structures in gate structures to prevent current leakage through source/drain regions (EPI), transistors, and silicon substrate. The isolation structures are arranged in a pattern with a long isolation structure adjacent a short isolation structure. The isolation structures may be formed in the gate structure prior to or after the replacement gate sequence.

Abstract: Embodiments of the present disclosure provide a bond stage for bonding a semiconductor integrated circuit (IC) die. The bond stage includes a bonding platform having a top surface and a bottom surface opposing the top surface, a first actuator operable to tilt the bonding platform about a first rotation axis, and a plurality of contact sensors disposed at the bonding platform.

Abstract: A structure includes a plurality of semiconductor regions, a first gate stack and a second gate stack immediately neighboring each other, a first fin isolation region in the first gate stack, and a second fin isolation region in the second gate stack. The first fin isolation region and the second fin isolation region have a sideway overlap having an overlap distance being equal to or greater than a pitch of the plurality of semiconductor regions. The overlap distance is measured in a direction parallel to lengthwise directions of the first gate stack and the second gate stack. A plurality of source/drain regions are on opposing sides of the first gate stack and the second gate stack to form a plurality of transistors.

Abstract: A pump health analysis method and a pump health analysis device using the same are provided. A standard vibration curve of a standard pump is obtained. The standard vibration curve is converted from a time domain to a frequency domain to obtain a first frequency distribution curve. A sample vibration curve of a sample pump is obtained. The sample vibration curve is converted from the time domain to the frequency domain to obtain a second frequency distribution curve. The first frequency distribution curve is compared with the second frequency distribution curve by using a cosine similarity algorithm to obtain a health index of the sample pump.

Abstract: Provided is a method for preparing an intervertebral disc annulus fibrosus implant, including: obtaining a sample having a plurality of ring-shaped collagen fiber layers; cutting and shaping the sample into a column having a top surface, an opposite bottom surface, and a peripheral surface connecting the top surface and the opposite bottom surface, wherein an area of the top surface is smaller than the area of the bottom surface; removing cells in the column; disinfecting, drying and shaping the column to prepare an column-shaped intervertebral disc annulus fibrosus implant. The present disclosure further provides an intervertebral disc annulus fibrosus implant and a method for transplanting an intervertebral disc annulus fibrosus implant. The disclosure can repair the damage of the intervertebral disc fibrous annulus and prevent the leakage of gel-like materials in the nucleus pulposus.

Abstract: A radiotherapy system includes a neutron acceptor, an aerosolization device for aerosolizing the neutron acceptor, and an energy beam generator. A method for treating cancer, including: administering to a subject in need thereof an effective amount of an aerosolized neutron acceptor; and irradiating the subject with neutrons. A method for diagnosing cancer, including: administering to a subject in need thereof an effective amount of an aerosolized radioactive agent; and receiving an energy beam signal from the subject. A method for delivering a neutron receptor to a subject during radiation therapy, including aerosolizing the neutron receptor and administering to the subject an effective amount of the neutron receptor.

Abstract: The present invention discloses a data access interface unit comprising: a physical storage device controller for receiving a first control signal from a first storage virtualization controller, and accordingly determining the first storage virtualization controller as the primary controller, and generating a first selection signal; a selector for receiving the first selection signal, and accordingly selecting data and signals from the first storage virtualization controller; and a clock generation circuit for providing a dedicated clock signal to the physical storage device, where when the physical storage device controller receives a re-set signal from a second storage virtualization controller, the physical storage device controller determines the second storage virtualization controller as the new primary controller, and accordingly generates a second selection signal so as to control the selector to select data and signals from the second storage virtualization controller.

Abstract: An end-to-end design method for designing a free-form surface system comprises: S1, providing an initial plane system, solving a first-order geometric structure according to the initial plane system, the first-order geometric structure comprising multiple curved surfaces, and determining an optical focal length of each curved surface according to a field curvature equation and the focal length equation; S2, determining the optical focal length of each curved surface and adjusting the position of the curved surface using a flat field condition and a linear astigmatism elimination equation; S3, determining a fast design strategy for the first-order geometric structure, a design strategy meets at least one of the following three conditions: a focal length of the system is equal to a given value; and S4, constructing the free-form surface system using a surface normal correction method.

Abstract: Aspects of the disclosure provide for automatically generating labels for sensor data. For instance, first sensor data for a vehicle may be identified. This first sensor data may have been captured by a first sensor of the vehicle at a first location during a first point in time and may be associated with a first label for an object. Second sensor data for the vehicle may be identified. The second sensor data may have been captured by a second sensor of the vehicle at a second location at a second point in time outside of the first point in time. The second location is different from the first location. A determination may be made as to whether the object is a static object. Based on the determination that the object is a static object, the first label may be used to automatically generate a second label for the second sensor data.

Abstract: Methods for isolating two adjacent transistors are disclosed. A substrate has a first semiconducting fin on a first region and a second semiconducting fin on a second region, and the first semiconducting fin and the second semiconducting fin contact each other at a jog region. A dummy gate within or adjacent the jog region is removed to expose a portion of the first semiconducting fin and form an isolation volume. Etching is performed to remove the exposed portion of the first semiconducting fin and create a trench in the substrate. The trench and the isolation volume are filled with at least one dielectric material to form an electrically isolating structure between the first region and the second region. Additional dummy gates in each region can be removed and replaced with an electrically conductive material to form two adjacent transistors electrically isolated from each other.

Abstract: A hub motor includes an axle, a stator, a rotor, a casing, a sleeve, and a mounting seat. The axle has a first end, a second end, and a bump protruding out of a radial-outer-side surface of the axle. The bump is located on a side close to the second end in the extension direction. The stator is fixed to the axle and is close to the first end. The rotor is sleeved on the axle and pivots around the stator with the axle as an axis. The casing is sleeved on the axle, is driven by the rotor to pivot with the axle serving as an axis, and accommodates the stator and the rotor. The sleeve is rotatably sleeved on the second end of the axle and is connected to the casing. The mounting seat is connected to the axle and sleeved on the bump.

Abstract: Continuous polysilicon on oxide diffusion edge (CPODE) processes are described herein in which one or more semiconductor device parameters are tuned to reduce the likelihood of etching of source/drain regions on opposing sides of CPODE structures formed in a semiconductor device, to reduce the likelihood of depth loading in the semiconductor device, and/or to reduce the likelihood of gate deformation in the semiconductor device, among other examples. Thus, the CPODE processes described herein may reduce the likelihood of epitaxial damage to the source/drain regions, may reduce current leakage between the source/drain regions, and/or may reduce the likelihood of threshold voltage shifting for transistors of the semiconductor device. The reduced likelihood of threshold voltage shifting may provide more uniform and/or faster switching speeds for the transistors, more uniform and/or lower power consumption for the transistors, and/or increased device performance for the transistors, among other examples.

Abstract: A hub motor includes an axle, a rotor, a stator, and a casing. The axle is fixed to a frame of a bicycle. The rotor is sleeved on the axle and pivots with the axle. The stator is fixed to the axle and adjacent to the rotor. The casing is sleeved on the axle and driven by the rotor to pivot with the axle. The casing has an accommodating space, a first perforation, and a second perforation. The accommodating space accommodates the stator and the rotor. The axle includes a first component and a second component. The first component is sleeved on the second component. The first component is arranged to pass through the first perforation. The second component is arranged to pass through the second perforation. The first component and the second component cannot rotate relative to each other after being sleeved.

Abstract: The present disclosure provides a method for optimizing parameters of a ladder-type carbon trading mechanism based on an improved particle swarm optimization (IPSO) algorithm. The method first obtains information and operating data of a park-level integrated energy system, establishes equipment models and constraints of the park-level integrated energy system, and establishes a ladder-type carbon trading model; then encapsulates a process of optimized low-carbon dispatching of the park-level integrated energy system as a fitness function whose input is parameters of a carbon trading mechanism and output is a carbon emission of the system; and finally, introduces an IPSO algorithm to optimize the fitness function, and outputs optimization result information of the algorithm. The present disclosure verifies effectiveness and rationality of the model and the method that give full play to a role of the ladder-type carbon trading mechanism in the park-level integrated energy system through example analysis.

Abstract: A static random-access memory (SRAM) circuit and associated read operation method and write operation method are provided. The SRAM circuit includes memory units arranged in M columns and N rows, M bit lines, N row-voltage selection lines, N word lines, and a control circuit. The control circuit includes a controller, a voltage source, a voltage selection module, a word-line driving module, and a bit-line driving module. The voltage source provides a first voltage and a second voltage. When the control circuit performs access to the memory unit located in the mth column and the nth row, the voltage selection module transmits one of the first voltage and the second voltage to an nth row-voltage selection line. The voltage selection module transmits the second voltage to the other (N?1) row-voltage selection lines. The variables M, N, m, and n are positive integers.

Abstract: Provided is a method of producing human induced pluripotent stem cells from human somatic cells, including a step of homologous recombination and a step of integrase-mediated reaction.

Abstract: A continuous metal on diffusion edge (CMODE) may be used to form a CMODE structure in a semiconductor device after a replacement gate process that is performed to replace the polysilicon dummy gate structures of the semiconductor device with metal gate structures. The CMODE process described herein includes removing a portion of a metal gate structure (as opposed to removing a portion of a polysilicon dummy gate structure) to enable formation of the CMODE structure in a recess left behind by removal of the portion of the metal gate structure.