Abstract: A temperature sensing device includes a substrate, a first reflective module, a first window cover, and a dual thermopile sensor. The first reflective module is disposed on the substrate, including a first mirror chamber with a narrow field of view (FOV), and the first reflective module focuses a thermal radiation from measured object to a first image plane in the first mirror chamber. The first window cover is disposed on the first reflective module, and the first window cover allows a selected band of the thermal radiation to pass through. The dual thermopile sensor is disposed on the substrate and located in the first mirror chamber, and the dual thermopile sensor senses a temperature data from the first image plane. Additional second reflective module, LED source plus pin hole with same FOV of dual thermopile sensor can illuminate the measured object for ease of placement of object to be heated.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A negative electrode material for a lithium ion battery comprises a carbon material, a silicon nanomaterial, and a first solvent. The carbon material comprises carbon nanotubes. The carbon material and the silicon nanomaterial are uniformly mixed in the first solvent. The weight percentage of the silicon nanomaterial is between 1% and 30%, and the amount of the carbon material is 1% to 30% of the amount of the silicon nanomaterial. A negative electrode composite slurry for a lithium ion battery comprises the negative electrode material and a graphite mixture material. The graphite mixture material comprises graphite and a second solvent. The graphite is uniformly mixed in the second solvent, and the weight percentage of the graphite is between 20% and 40%.

Abstract: A conductive slurry for plating comprises a carbon material, a dispersant, a binder, and a solvent. The carbon material, the dispersant and the binder are uniformly mixed in the solvent. The weight percentage of the carbon material is between 0.1% and 1%. The carbon material comprises a carbon nanotube, graphene, or a combination thereof. A plating method for a circuit board, which utilizes the conductive slurry, is also disclosed. The circuit board comprises at least a through hole. The plating method comprises a coating step, a first cleaning step, a first drying step, a first micro-etching step, a second cleaning step, an anti-oxidation step, a third cleaning step, a plating step, and a second drying step.

Abstract: A negative electrode material for a lithium ion battery comprises a carbon material, a silicon nanomaterial, and a first solvent. The carbon material comprises carbon nanotubes. The carbon material and the silicon nanomaterial are uniformly mixed in the first solvent. The weight percentage of the silicon nanomaterial is between 1% and 30%, and the amount of the carbon material is 1% to 30% of the amount of the silicon nanomaterial. A negative electrode composite slurry for a lithium ion battery comprises the negative electrode material and a graphite mixture material. The graphite mixture material comprises graphite and a second solvent. The graphite is uniformly mixed in the second solvent, and the weight percentage of the graphite is between 20% and 40%.

Abstract: A sensing material for sensing a physiological parameter includes a carbon black material, a graphene material and a glue material, wherein the carbon black material, the graphene material and the glue material are mixed together based on a specific weight ratio.

Abstract: The invention provides a solar energy system. A flexible transparent body includes a top surface, a bottom surface and two edges, wherein the top surface is a light receiving surface for receiving light with a first wave-length. A plurality of solar cells is disposed on at least one of the edges of the flexible transparent body, wherein the solar cells can covert light having a second wave-length into electrical energy. A wavelength converting layer is provided for converting light with the first wave-length to light with the second wave-length.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Abstract: A flexible light source module including a flexible substrate, a flexible light guide film and a plurality of point light sources is provided. The flexible light guide film including light-guiding portions is disposed on the point light sources. Each of the light-guiding portions includes a light incident surface and a light emitting surface. The light incident surface includes light incident sub-surfaces. The light emitting surface includes light emitting sub-surfaces, and the one closest to the geometric center of the light-guiding portion is a first light emitting sub-surface. The absolute values of the tangent slopes of the first light emitting sub-surface are ascending with approaching the geometric center of the light-guiding portion. The light beams emitted from the point light sources exit out of the flexible light source module via the flexible light guide film so that the flexible light source module provides a uniform planar light source.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.

Abstract: A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength.

Abstract: A collimating light emitting device comprises a patterned optical layer able to redirect divergent light to light beam with uniform direction without utilizing external lenses thereby decreasing the size. The collimating light emitting device of the present invention may be utilized as a micro array projection device. The patterned optical layer may also be utilized in a single-die light-emitting device, thereby enhancing collimation. The manufacturing methods of the collimating light emitting device are also presented.

Abstract: A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.

Abstract: A flexible light source module including a flexible substrate, a flexible light guide film and a plurality of point light sources is provided. The flexible light guide film including light-guiding portions is disposed on the point light sources. Each of the light-guiding portions includes a light incident surface and a light emitting surface. The light incident surface includes light incident sub-surfaces. The light emitting surface includes light emitting sub-surfaces, and the one closest to the geometric center of the light-guiding portion is a first light emitting sub-surface. The absolute values of the tangent slopes of the first light emitting sub-surface are ascending with approaching the geometric center of the light-guiding portion. The light beams emitted from the point light sources exit out of the flexible light source module via the flexible light guide film so that the flexible light source module provides a uniform planar light source.

Abstract: A light emitting unit array including a plurality of micro-light emitting diodes (?-LEDs) is provided. The micro-light emitting diodes are arranged in an array on a substrate, and each of the micro-light emitting diodes includes a reflection layer, a light emitting structure, and a light collimation structure. The light emitting structure is disposed on the reflection layer, and includes a first type doped semiconductor layer, an active layer, and a second type doped semiconductor layer that are stacked sequentially. At least a portion of the first type doped semiconductor layer, the active layer, and the second type doped semiconductor layer are sandwiched between the reflection layer and the light collimation structure.

Abstract: The invention provides a solar energy system. A flexible transparent body includes a top surface, a bottom surface and two edges, wherein the top surface is a light receiving surface for receiving light with a first wave-length. A plurality of solar cells is disposed on at least one of the edges of the flexible transparent body, wherein the solar cells can covert light having a second wave-length into electrical energy. A wavelength converting layer is provided for converting light with the first wave-length to light with the second wave-length.