Abstract: Methods of forming self-aligned patterns for performing oppositely doped deep implantations in a semiconductor substrate are disclosed. The semiconductor substrate has implantation and non-implantation regions. The methods include forming a hardmask pattern for a first implantation with a first conductivity-type dopant, depositing an etch stop layer, filling trenches between the hardmask pattern with a sacrificial filler material having a higher wet etch resistance than the hardmask, removing a top portion of the sacrificial filler material and the etch stop layer over a top surface of the hardmask pattern, removing the hardmask pattern in the implantation region by wet etching, and performing a second ion implantation with a second conductivity type dopant opposite of the first conductivity type.

Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.

Abstract: Methods of forming self-aligned patterns for performing oppositely doped deep implantations in a semiconductor substrate are disclosed. The semiconductor substrate has implantation and non-implantation regions. The methods include forming a hardmask pattern for a first implantation with a first conductivity-type dopant, depositing an etch stop layer, filling trenches between the hardmask pattern with a sacrificial filler material having a higher wet etch resistance than the hardmask, removing a top portion of the sacrificial filler material and the etch stop layer over a top surface of the hardmask pattern, removing the hardmask pattern in the implantation region by wet etching, and performing a second ion implantation with a second conductivity type dopant opposite of the first conductivity type.

Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.