Patents by Inventor Chen Yap Tan

Chen Yap Tan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11301311
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to embodiments of the disclosure. The method includes: receiving at least one first read command from a host system; and determining, according to a total data amount of to-be-read data indicated by the at least one first read command, whether to start a pre-read operation. The pre-read operation is configured to pre-read data stored in at least one first logical unit, and the first logical unit is mapped to at least one physical unit.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: April 12, 2022
    Assignee: PHISON ELECTRONICS CORP.
    Inventor: Chen Yap Tan
  • Publication number: 20210064449
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to embodiments of the disclosure. The method includes: receiving at least one first read command from a host system; and determining, according to a total data amount of to-be-read data indicated by the at least one first read command, whether to start a pre-read operation. The pre-read operation is configured to pre-read data stored in at least one first logical unit, and the first logical unit is mapped to at least one physical unit.
    Type: Application
    Filed: October 4, 2019
    Publication date: March 4, 2021
    Applicant: PHISON ELECTRONICS CORP.
    Inventor: Chen Yap Tan
  • Patent number: 10884660
    Abstract: An exemplary embodiment of the disclosure provides a memory management method for a rewritable non-volatile memory module. The method includes: receiving a first type command from a host system and temporarily storing the first type command to a first command queue; after receiving the first type command, receiving a second type command from the host system and temporarily storing the second type command to a second command queue; if the first command queue meets a preset condition, performing a programming operation for programming the rewritable non-volatile memory module according to the first type command in the first command queue; and after performing the programming operation, transmitting a response message corresponding to the second type command in the second command queue to the host system.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: January 5, 2021
    Assignee: PHISON ELECTRONICS CORP.
    Inventor: Chen Yap Tan
  • Publication number: 20200081653
    Abstract: An exemplary embodiment of the disclosure provides a memory management method for a rewritable non-volatile memory module. The method includes: receiving a first type command from a host system and temporarily storing the first type command to a first command queue; after receiving the first type command, receiving a second type command from the host system and temporarily storing the second type command to a second command queue; if the first command queue meets a preset condition, performing a programming operation for programming the rewritable non-volatile memory module according to the first type command in the first command queue; and after performing the programing operation, transmitting a response message corresponding to the second type command in the second command queue to the host system.
    Type: Application
    Filed: October 25, 2018
    Publication date: March 12, 2020
    Applicant: PHISON ELECTRONICS CORP.
    Inventor: Chen Yap Tan
  • Patent number: 8533385
    Abstract: A method for preventing read-disturb happened in non-volatile memory and a controller thereof are disclosed. The non-volatile memory includes a plurality of blocks, and each block includes a plurality of pages. The method includes storing a program code executed by a controller of the non-volatile memory storage device for controlling the non-volatile memory storage device into at least a first block of the blocks; and copying the program code stored in the first block into at least a second block of the blocks when power is supplied to the non-volatile memory storage device.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: September 10, 2013
    Assignee: Phison Electronics Corp.
    Inventor: Chen Yap Tan