Patents by Inventor Chen-Yen KAO

Chen-Yen KAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of defect inspection
    Patent number: 11624985
    Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: April 11, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ta-Ching Yu, Shih-Che Wang, Shu-Hao Chang, Yi-Hao Chen, Chen-Yen Kao, Te-Chih Huang, Yuan-Fu Hsu
  • METHODS OF DEFECT INSPECTION
    Publication number: 20210018848
    Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Inventors: Ta-Ching YU, Shih-Che WANG, Shu-Hao CHANG, Yi-Hao CHEN, Chen-Yen KAO, Te-Chih HUANG, Yuan-Fu HSU
  • Methods of defect inspection
    Patent number: 10795270
    Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ta-Ching Yu, Shih-Che Wang, Shu-Hao Chang, Yi-Hao Chen, Chen-Yen Kao, Te-Chih Huang, Yuan-Fu Hsu
  • METHODS OF DEFECT INSPECTION
    Publication number: 20190064675
    Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
    Type: Application
    Filed: December 6, 2017
    Publication date: February 28, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ta-Ching YU, Shih-Che WANG, Shu-Hao CHANG, Yi-Hao CHEN, Chen-Yen KAO, Te-Chih HUANG, Yuan-Fu HSU