Abstract: A method of manufacturing a semiconductor microstructure comprises: forming a standard CMOS wafer with at least one micro-electro-mechanical structure on a top surface of a silicon substrate, forming at least one sacrificial layer and one resist layer sequentially on the top surface of the CMOS wafer; forming an etching resist layer on a lower rear surface of the silicon substrate, etching the lower rear surface of the silicon base by deep reactive ion etching or wet etching to form a space corresponding to the micro-electro-mechanical structure, and etching the CMOS wafer and the sacrificial layer, respectively, to cause suspension of the micro-electro-mechanical structure. Such arrangements effectively prevent the occurrence of undercut, reduce the exposure and possibility of damage of the micro-electro-mechanical structure, and effectively save the package cost.