Abstract: A visual inspection method of a curved object executed by a visual inspection system. The visual inspection system includes a robotic arm, a camera mounted at a tail end of the robotic arm, a fixing unit mounted under the camera, and a control unit electrically connected to the robotic arm and the camera. Specific steps of the visual inspection method of the curved object are described hereinafter. Fix a curved object which is to be inspected by the fixing unit. Capture the object which is to be inspected with a plurality of groups of preset parameters by the camera. Use the control unit to calculate a better shooting parameter. Use the better shooting parameter by the camera to proceed with visual inspections of the curved objects which are to be inspected in batches.

Abstract: A radar reflective vehicle breakdown warning sign comprises primarily a body and a projecting lamp, and a remote control for connecting to the body and the projecting lamp. In an interior of the body is disposed a control circuit and a transmission component connected to the control circuit. The transmission component is pivotally connected to a vehicle breakdown warning sign. On the vehicle breakdown warning sign are disposed radar wave reflecting patches which may reflect the radar waves emitted by a vehicle with an autonomous driving function. In an interior of the projecting lamp is disposed a control circuit and a light emitting component connected to the control circuit.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: Etch uniformity is improved by providing a thermal pad between an insert ring and electrostatic chuck in an etching chamber. The thermal pad provides a continuous passive heat path to dissipate heat from the insert ring and wafer edge to the electrostatic chuck. The thermal pad helps to keep the temperature of the various components in contact with or near the wafer at a more consistent temperature. Because temperature may affect etch rate, such as with etching hard masks over dummy gate formations, a more consistent etch rate is attained. The thermal pad also provides for etch rate uniformity across the whole wafer and not just at the edge. The thermal pad may be used in an etch process to perform gate replacement by removing hard mask layer(s) over a dummy gate electrode.

Abstract: A decoding apparatus includes an input power estimating circuit, an error correction decoder and a controller. The input power estimating circuit generates multiple estimated input powers for multiple sets of data included in a packet that needs to be corrected, and calculates respective power differences between the multiple estimated input powers and a reference power. The controller determines one or multiple candidate error positions according to one of the multiple power differences that is higher than a predetermined threshold. The error correction decoder performs a decoding process on the packet according to the one or multiple candidate error positions.

Abstract: A decoding apparatus includes a differential decoder, an error correction decoder and a controller. The differential decoder performs differential decoding according to a differential encoding dependency to generate a differential decoding result. The error correction decoder performs a decoding process on multiple packets that need to be corrected according to the differential decoding result to accordingly generate respective error correction records, wherein the packets are generated according to the differential decoding results, and the packets include a first packet and a second packet. When the error correction record of the first packet indicates that the decoding process of the first packet is unsuccessful, the controller generates a set of error position information according to the error correction record of the second packet, and requests the error correction decoder to perform another decoding process on the first packet according to the error position information.

Abstract: A decoding apparatus includes an input power estimating circuit, an error correction decoder and a controller. The input power estimating circuit generates multiple estimated input powers for multiple sets of data included in a packet that needs to be corrected, and calculates respective power differences between the multiple estimated input powers and a reference power. The controller determines one or multiple candidate error positions according to one of the multiple power differences that is higher than a predetermined threshold. The error correction decoder performs a decoding process on the packet according to the one or multiple candidate error positions.

Abstract: A decoding apparatus includes a differential decoder, an error correction decoder and a controller. The differential decoder performs differential decoding according to a differential encoding dependency to generate a differential decoding result. The error correction decoder performs a decoding process on multiple packets that need to be corrected according to the differential decoding result to accordingly generate respective error correction records, wherein the packets are generated according to the differential decoding results, and the packets include a first packet and a second packet. When the error correction record of the first packet indicates that the decoding process of the first packet is unsuccessful, the controller generates a set of error position information according to the error correction record of the second packet, and requests the error correction decoder to perform another decoding process on the first packet according to the error position information.

Abstract: A method for determining impulsive interference applicable to an orthogonal frequency division multiple access (OFDMA) signal receiver is provided. The receiving method includes calculating a subcarrier noise of a first symbol, calculating a subcarrier noise of a second symbol, calculating a first ratio of the subcarrier noise of the first symbol to the subcarrier noise of the second symbol, determining whether the ratio is greater than a first threshold, and recognizing that the first symbol suffers from impulsive interference when the first ratio is greater than the first threshold.

Abstract: A method for determining impulsive interference applicable to an orthogonal frequency division multiple access (OFDMA) signal receiver is provided. The receiving method includes calculating a subcarrier noise of a first symbol, calculating a subcarrier noise of a second symbol, calculating a first ratio of the subcarrier noise of the first symbol to the subcarrier noise of the second symbol, determining whether the ratio is greater than a first threshold, and recognizing that the first symbol suffers from impulsive interference when the first ratio is greater than the first threshold.

Abstract: A channel estimating technique is applied to an Orthogonal Frequency-Division Multiplexing (OFDM) communication system which receives a plurality of OFDM symbols. In one aspect, a channel estimating method includes performing Inverse Fast Fourier Transform (IFFT) with a second number of sampling points and a phase shift on each of preliminarily estimated frequency-domain channel responses including a first number of response values corresponding to each of the OFDM symbols, so as to obtain a first time-domain channel impulse response corresponding to each of the OFDM symbols, where the first number is lager than the second number. The method also generates a plurality of frequency-domain channel responses corresponding to the OFDM symbols according to the time-domain channel impulse responses.

Abstract: A channel estimating technique is applied to an Orthogonal Frequency-Division Multiplexing (OFDM) communication system which receives a plurality of OFDM symbols. In one aspect, a channel estimating method includes performing Inverse Fast Fourier Transform (IFFT) with a second number of sampling points and a phase shift on each of preliminarily estimated frequency-domain channel responses including a first number of response values corresponding to each of the OFDM symbols, so as to obtain a first time-domain channel impulse response corresponding to each of the OFDM symbols, where the first number is lager than the second number. The method also generates a plurality of frequency-domain channel responses corresponding to the OFDM symbols according to the time-domain channel impulse responses.

Abstract: A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.