Patents by Inventor Chen-Yong Lin

Chen-Yong Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7355015
    Abstract: The invention is directed to a method of detecting a malignancy or a pre-malignant lesion in breast or other tissue, or a pathologic condition, by detecting the presence of single-chain or two-chain forms of matriptase in the tissue. The invention is further directed to a method of treating malignancies, which have the phenotype of matriptase production by administering a tumor formation inhibiting effective amount of concentrate of Bowman-Birk inhibitor (BBIC), or other matriptase inhibitor. The invention also is directed to nucleic acids encoding a matriptase protein or fragments thereof, and their use for structure elucidation and modeling to identify other inhibitors of matriptase, as well as to methods of identifying matriptase modulating agents, including activators and inhibitors.
    Type: Grant
    Filed: March 10, 2000
    Date of Patent: April 8, 2008
    Assignee: Georgetown University School of Medicine
    Inventors: Robert B. Dickson, Chen-Yong Lin, Michael Johnson, Shaomeng Wang, Istvan Enyedy
  • Patent number: 7037776
    Abstract: A method of fabricating a DRAM cell, comprising the following steps. A substrate is provided. An isolation structure is formed within the substrate. The substrate is patterned to form nodes adjacent the isolation structure. Doped regions are formed with the substrate adjacent the nodes. A gate dielectric layer is formed over the patterned substrate, lining the nodes. A conductive layer is formed over the gate dielectric layer, filling the nodes. The conductive layer is patterned to form: a top electrode capacitor within the nodes; and respective word lines over the substrate adjacent the top electrode capacitor; each word line having exposed side walls. Source/drain regions are formed adjacent the word lines.
    Type: Grant
    Filed: December 19, 2002
    Date of Patent: May 2, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jenn-Ming Huang, Chen-Yong Lin
  • Publication number: 20040121533
    Abstract: A method of fabricating a DRAM cell, comprising the following steps. A substrate is provided. An isolation structure is formed within the substrate. The substrate is patterned to form nodes adjacent the isolation structure. Doped regions are formed with the substrate adjacent the nodes. A gate dielectric layer is formed over the patterned substrate, lining the nodes. A conductive layer is formed over the gate dielectric layer, filling the nodes. The conductive layer is patterned to form: a top electrode capacitor within the nodes; and respective word lines over the substrate adjacent the top electrode capacitor; each word line having exposed side walls. Source/drain regions are formed adjacent the word lines.
    Type: Application
    Filed: December 19, 2002
    Publication date: June 24, 2004
    Applicant: Taiwan Semiconductor Manufacturing Company
    Inventors: Jenn-Ming Huang, Chen-Yong Lin
  • Patent number: 6677377
    Abstract: The present invention relates to a method of inhibiting carcinoma progression wherein matriptase plays a role in a subject in need of such inhibition including administering to a subject an effective amount of a compound comprising two positively charged groups, which are the same or different. The groups are linked by a chemical group having a length of between 5 and 30 A, and preferably between 15 and 24 A. Diagnostic methods based on matriptase action and therapeutic methods involving inhibition of matriptase activity are provided.
    Type: Grant
    Filed: June 21, 2001
    Date of Patent: January 13, 2004
    Assignee: Georgetown University School of Medicine
    Inventors: Chen-Yong Lin, Robert B. Dickson, Shaomeng Wang, Istvan Enyedy, Sheau-Ling Lee
  • Publication number: 20030170245
    Abstract: The present invention provides an in vitro method of diagnosing the presence of a pre-malignant lesion, a malignancy, or other pathologic condition, in a subject, which is characterized by the presence of activated matriptase including the steps of: (A) obtaining a biological sample from a subject that is to be tested for a pre-malignant lesion, a malignancy, or other pathologic condition; B) exposing the biological sample to a detectable agent which recognizes and binds to activated matriptase; and (D) determining whether said detectable agent is bound to the biological sample. Preferably, the detectable agent is an antibody which specifically binds to activated matriptase. More preferably the antibody is selected from M69 and M123.
    Type: Application
    Filed: March 5, 2002
    Publication date: September 11, 2003
    Inventors: Robert B. Dickson, Chen-Yong Lin, Christelle Benaud, Michael Oberst
  • Publication number: 20030092752
    Abstract: The present invention relates to a method of inhibiting carcinoma progression wherein matriptase plays a role in a subject in need of such inhibition including administering to a subject an effective amount of a compound comprising two positively charged groups, which are the same or different. The groups are linked by a chemical group having a length of between 5 and 30 A, and preferably between 15 and 24 A. Diagnostic methods based on matriptase action and therapeutic methods involving inhibition of matriptase activity are provided.
    Type: Application
    Filed: June 21, 2001
    Publication date: May 15, 2003
    Inventors: Chen-Yong Lin, Robert B. Dickson, Shaomeng Wang, Istvan Enyedy, Sheau-Ling Lee
  • Patent number: 6338998
    Abstract: Within a method for fabricating an embedded dynamic random access memory (DRAM) semiconductor integrated circuit microelectronic fabrication there is formed contacting a second source/drain region within a field effect transistor (FET) memory semiconductor integrated circuit microelectronic fabrication device a storage capacitor prior to forming within a field effect transistor (FET) logic semiconductor integrated circuit microelectronic fabrication device a pair of first source/drain regions. By employing such a process ordering, the field effect transistor (FET) logic semiconductor integrated circuit microelectronic device, and the embedded dynamic random access memory (DRAM) semiconductor integrated circuit microelectronic fabrication, are fabricated with enhanced performance.
    Type: Grant
    Filed: November 15, 2000
    Date of Patent: January 15, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd
    Inventors: Chen-Jong Wang, Chen-Yong Lin, Kevin Chiang
  • Patent number: 6077938
    Abstract: Compositions of the instant invention comprise a monoclonal antibody designated as 21-9 which binds selectively with an 80 kDa matrix-degrading proteinase having an average molecular weight of about 80 kDa, which is active in the presence of Ca.sup.2, Mg.sup.2+ and Mn.sup.2+.
    Type: Grant
    Filed: October 27, 1997
    Date of Patent: June 20, 2000
    Assignee: Georgetown University
    Inventors: Robert B. Dickson, Chen-Yong Lin