Abstract: Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

Abstract: A cooling and heating structure for a fiber optic transceiver is disclosed. In the cooling and heating structure, a field programmable gate array (FPGA) chip reads a temperature value of a small form-factor pluggable transceiver (SFP) cage from a sensor, a digital to analog converter (DAC) converts the temperature value into a voltage value, a processing chip converts the voltage value into an output-voltage value, and a thermoelectric cooler (TEC) adjusts a working wattage thereof according to the output-voltage value, so as to control the TEC to cool or heat the SFP cage, thereby achieving the technical effect of using the TEC to cool and heat the SFP cage to prevent link down and instability of the fiber optic transceiver during signal transmission in the high-temperature environment and the low-temperature environment from occurring.