Patents by Inventor Chen-Yuan Hsu

Chen-Yuan Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10874002
    Abstract: The present application relates to a method for computing illumination mixed lights. The method includes the following. Acquire a first chromaticity coordinate point corresponding to a first colored light, and acquire a second chromaticity coordinate point corresponding to a second colored light. Acquire a target chromaticity coordinate point, and compute a first lumen mixing ratio of the first colored light and the second colored light. Determine a middle chromaticity coordinate point corresponding to a middle-colored light obtained by mixing according to the first lumen mixing ratio. Determine a first compensation colored light and a second compensation colored light which are matched with the middle chromaticity coordinate point. Conduct compensation computation on the middle colored light, and determine a second lumen mixing ratio corresponding to the first compensation colored light, the second compensation colored light and the middle colored light when mixed to the target chromaticity coordinate point.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: December 22, 2020
    Assignee: DONGGUAN STAR MOUNT TRADING CO., LTD.
    Inventors: Chen-Yuan Hsu, Shou-Cheng Wu
  • Publication number: 20200253009
    Abstract: The present application relates to a method for computing illumination mixed lights. The method includes the following. Acquire a first chromaticity coordinate point corresponding to a first colored light, and acquire a second chromaticity coordinate point corresponding to a second colored light. Acquire a target chromaticity coordinate point, and compute a first lumen mixing ratio of the first colored light and the second colored light. Determine a middle chromaticity coordinate point corresponding to a middle-colored light obtained by mixing according to the first lumen mixing ratio. Determine a first compensation colored light and a second compensation colored light which are matched with the middle chromaticity coordinate point. Conduct compensation computation on the middle colored light, and determine a second lumen mixing ratio corresponding to the first compensation colored light, the second compensation colored light and the middle colored light when mixed to the target chromaticity coordinate point.
    Type: Application
    Filed: May 23, 2019
    Publication date: August 6, 2020
    Applicant: DONGGUAN STAR MOUNT TRADING CO., LTD.
    Inventors: CHEN-YUAN HSU, SHOU-CHENG WU
  • Publication number: 20130161298
    Abstract: The present invention provides a plasma torch device. The device comprises a front electrode, a back electrode and a vortex flow generator. The torch roots of the back electrode are moved by fixed magnets. By controlling the magnets coordinated with vortex air flow, the torch roots are moved back and forth periodically on inner surface of the back electrode. The torch roots do not stay at the same place for long for preventing increasing local heat burden of the electrode. Thus, life time and maintenance cycle of the electrode is prolonged with reduced operational cost of plasma torch and enhanced reliability of the device.
    Type: Application
    Filed: August 22, 2012
    Publication date: June 27, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Jyh-Ming Yan, Ming-Song Yang, Chin-Ching Tzeng, Yo-Ming Chang, Kuo-Chao Liang, Chen-Yuan Hsu, Shao-Yang Lu
  • Patent number: 6656796
    Abstract: Within a method for fabricating a split gate field effect transistor (FET) device there is employed a two step etch method for forming a floating gate electrode. Within the two step etch method there is employed a patterned first masking layer and a blanket second masking layer to assist in providing the floating gate electrode with a sharply pointed tip within at least either an upper edge of the floating gate electrode or sidewall of the floating gate electrode. The sharply pointed tip provides the split gate field effect transistor (FET) device with enhanced data erasure performance.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: December 2, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Bor-Wen Chan, Yu-I Wang, Chen-Yuan Hsu, Hun-Jan Tao
  • Publication number: 20030134435
    Abstract: Within a method for fabricating a split gate field effect transistor (FET) device there is employed a two step etch method for forming a floating gate electrode. Within the two step etch method there is employed a patterned first masking layer and a blanket second masking layer to assist in providing the floating gate electrode with a sharply pointed tip within at least either an upper edge of the floating gate electrode or sidewall of the floating gate electrode. The sharply pointed tip provides the split gate field effect transistor (FET) device with enhanced data erasure performance.
    Type: Application
    Filed: January 14, 2002
    Publication date: July 17, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bor-Wen Chan, Yu-I Wang, Chen-Yuan Hsu, Hun-Jan Tao