Abstract: This disclosure provides a display panel including pixels and a metal layer below the pixels. The metal layer includes a body portion at the center of the display panel and a mesh portion at the edge of the display panel and adjacent to the body portion. The contour of the body portion defines a first region, where first pixels are disposed in the first region and electrically connected to the body portion. The contour of the mesh portion defines a second region, where second pixels are disposed in the second region and electrically connected to the mesh portion. The mesh portion and the body portion are electrically connected to each other, the density of metal distribution of the first region is higher than that of the second region, and the area of the second region is 20% to 40% of the area of the display panel.

Abstract: The present disclosure provides a display panel including a substrate, a pixel pad layer above the substrate, and a contact stack above the substrate and electrically connected the pixel pad layer. The contact stack includes a first metal layer, a second metal layer above the first metal layer, and a first interlayer insulation layer between the first metal layer and the second metal layer. The first interlayer insulation layer includes a first top portion covering an edge of a top surface of the first metal layer. The second metal layer is electrically connected to the top surface of the first metal layer exposed by the first interlayer insulation layer. A sidewall of the first interlayer insulation layer is recessed from a sidewall of the substrate by a first distance greater than zero.

Abstract: A display apparatus includes a driving backplane and a light-emitting element. The driving backplane includes a substrate, a pixel driving circuit disposed on the substrate and a pad electrically connected to the pixel driving circuit. The pad has a first metal layer, a first intermetallic layer and a first diffusion barrier layer, wherein the first metal layer, the first intermetallic layer and the first diffusion barrier layer are sequentially stacked along a direction away from the substrate. The light-emitting element includes an electrode and a conductive bump electrically connected to the electrode. The conductive bump has a second intermetallic layer, and the first diffusion barrier layer is located between the second intermetallic layer and the first intermetallic layer.

Abstract: A display panel has a plurality of pixel areas and a peripheral area surrounding the pixel areas, and includes a substrate, at least two planarization layers, a plurality of pads, a first dummy pattern, and a plurality of light-emitting devices. The substrate has a first substrate edge extending in a first direction. The at least two planarization layers are disposed on the substrate. The pads are disposed on the at least two planarization layers, and are located in the pixel areas. The pads include at least one first edge pad closest to the first substrate edge. The first dummy pattern is disposed on the at least two planarization layers, and extends in the peripheral area between the at least one first edge pad and the first substrate edge. The light-emitting devices are electrically connected to the pads.

Abstract: A pixel structure includes a substrate, a thin film transistor disposed on the substrate and having a first end, a second end and a control end, a first signal line electrically connected to the first end of the thin film transistor, a second signal line electrically connected to the control end of the thin film transistor, a pixel electrode electrically connected to the second end of the thin film transistor, and a light shielding layer. At least one of the first end of the thin film transistor, the second end of the thin film transistor, the control end of the thin film transistor, the first signal line and the second signal line is formed of a conductive layer. The light shielding layer is disposed on a top surface and a sidewall of the conductive layer. The light shielding layer includes a photoresist and particles mixed within the photoresist.

Abstract: A pixel structure includes a substrate, a thin film transistor disposed on the substrate and having a first end, a second end and a control end, a first signal line electrically connected to the first end of the thin film transistor, a second signal line electrically connected to the control end of the thin film transistor, a pixel electrode electrically connected to the second end of the thin film transistor, and a light shielding layer. At least one of the first end of the thin film transistor, the second end of the thin film transistor, the control end of the thin film transistor, the first signal line and the second signal line is formed of a conductive layer. The light shielding layer is disposed on a top surface and a sidewall of the conductive layer. The light shielding layer includes a photoresist and particles mixed within the photoresist.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

Abstract: The present invention discloses a method for modificating a fluoropolymer. First, a fluoropolymer is provided, and then a hydrogen plasma treatment is performed on the fluoropolymer, so that C—H group is introduced to the surface of the fluoropolymer to form an intermediate. Next, an ozone treatment is performed on the intermediate, wherein the C—H group serves as ozone accessible site to form peroxide, and a first modified fluoropolymer is then formed. Finally, a grafting polymerization is initiated from the peroxide of the first modified fluoropolymer in the presence of a composition comprising at least one functional monomer, so as to form a second modified fluoropolymer. Furthermore, this invention also discloses methods for fabricating metal-clad laminates.