Patents by Inventor Chen-Yui Yang
Chen-Yui Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250307088Abstract: Concepts and technologies are disclosed for deploying a virtual network function (VNF) that provides a service in a cellular network. A processor allocates hardware resources at one or more sites to host the VNF based on a redundancy policy that defines a three-layer redundancy profile comprising intra-site, inter-site, and internal redundancy. The allocation includes assigning a geographic location, a pod, and a rack for the hardware resources. The processor deploys the VNF to the allocated hardware resources based on a placement policy that defines affinity and anti-affinity rules for distributing virtual machines associated with the VNF. The disclosed technologies improve fault tolerance and service continuity in virtualized cellular network environments.Type: ApplicationFiled: June 17, 2025Publication date: October 2, 2025Applicant: Shopify Inc.Inventors: Chen-Yui YANG, Paritosh BAJPAY, David H. LU, Chaoxin QIU
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Publication number: 20250301767Abstract: A semiconductor device includes a first plurality of channel layers. The first plurality of channel layers extend along a first direction. The semiconductor device includes a second plurality of channel layers. The second plurality of channel layers also extend along the first direction. The semiconductor de123329-vice includes a first dielectric fin structure that also extends along the first direction. The semiconductor device includes a first gate structure that extends along a second direction. The first gate structure comprises a first portion that wraps around each of the first plurality of channel layers and a second portion that wraps around each of the second plurality of channel layers. The first dielectric fin structure separates the first and second portions from each other. The first gate structure comprises a third portion that connects the first and second portions to each other and is vertically disposed below the first dielectric fin structure.Type: ApplicationFiled: June 5, 2025Publication date: September 25, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Chen-Ping Chen, Chen-Yui Yang, Hsiao Wen Lee, Ming-Ching Chang
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Patent number: 12367120Abstract: Concepts and technologies are disclosed related to allocation of hardware resources for virtual network function (VNF) deployment at sites based on templates. A design template defines hardware resources to allocate for a service, and a deployment policy defines deployment of the virtual network functions (VNFs) associated with the service to the hardware resources. Hardware resources are allocated at one or more sites based on the design template to host VNFs for the service, and VNFs are deployed to the hardware resources based upon the deployment policy.Type: GrantFiled: March 21, 2024Date of Patent: July 22, 2025Assignee: Shopify Inc.Inventors: Chen-Yui Yang, Paritosh Bajpay, David H. Lu, Chaoxin Qiu
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Patent number: 12336271Abstract: A semiconductor device includes a first plurality of channel layers. The first plurality of channel layers extend along a first direction. The semiconductor device includes a second plurality of channel layers. The second plurality of channel layers also extend along the first direction. The semiconductor de123329-vice includes a first dielectric fin structure that also extends along the first direction. The semiconductor device includes a first gate structure that extends along a second direction. The first gate structure comprises a first portion that wraps around each of the first plurality of channel layers and a second portion that wraps around each of the second plurality of channel layers. The first dielectric fin structure separates the first and second portions from each other. The first gate structure comprises a third portion that connects the first and second portions to each other and is vertically disposed below the first dielectric fin structure.Type: GrantFiled: August 28, 2021Date of Patent: June 17, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Chen-Ping Chen, Chen-Yui Yang, Hsiao Wen Lee, Ming-Ching Chang
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Publication number: 20250176251Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: ApplicationFiled: January 27, 2025Publication date: May 29, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
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Patent number: 12230545Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: GrantFiled: November 30, 2023Date of Patent: February 18, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
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Publication number: 20240272997Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: ApplicationFiled: March 21, 2024Publication date: August 15, 2024Applicant: Shopify Inc.Inventors: Chen-Yui YANG, Paritosh BAJPAY, David H. LU, Chaoxin QIU
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Patent number: 11960370Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: GrantFiled: December 2, 2022Date of Patent: April 16, 2024Assignee: SHOPIFY, INC.Inventors: Chen-Yui Yang, Paritosh Bajpay, David H. Lu, Chaoxin Qiu
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Publication number: 20240096705Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: ApplicationFiled: November 30, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
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Patent number: 11842929Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: GrantFiled: August 30, 2021Date of Patent: December 12, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Yu Kao, Shih-Yao Lin, Chen-Ping Chen, Chih-Chung Chiu, Chen-Yui Yang, Ke-Chia Tseng, Hsien-Chung Huang, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
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Patent number: 11693749Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: GrantFiled: December 21, 2021Date of Patent: July 4, 2023Assignee: SHOPIFY, INC.Inventors: Chen-Yui Yang, Paritosh Bajpay, David H. Lu, Chaoxin Qiu
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Publication number: 20230099659Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: ApplicationFiled: December 2, 2022Publication date: March 30, 2023Applicant: Shopify Inc.Inventors: Chen-Yui YANG, Paritosh BAJPAY, David H. LU, Chaoxin QIU
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Patent number: 11616697Abstract: Virtual machine server clusters are managed using self-healing and dynamic optimization to achieve closed-loop automation. The technique uses adaptive thresholding to develop actionable quality metrics for benchmarking and anomaly detection. Real-time analytics are used to determine the root cause of KPI violations and to locate impact areas. Self-healing and dynamic optimization rules are able to automatically correct common issues via no-touch automation in which finger-pointing between operations staff is prevalent, resulting in consolidation, flexibility and reduced deployment time.Type: GrantFiled: June 14, 2021Date of Patent: March 28, 2023Assignee: AT&T Intellectual Property I, L.P.Inventors: Chen-Yui Yang, David H. Lu, Scott Baker, Anthony M. Srdar, Gabriel Bourge
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Publication number: 20230067425Abstract: A semiconductor device includes a first plurality of channel layers. The first plurality of channel layers extend along a first direction. The semiconductor device includes a second plurality of channel layers. The second plurality of channel layers also extend along the first direction. The semiconductor de123329-vice includes a first dielectric fin structure that also extends along the first direction. The semiconductor device includes a first gate structure that extends along a second direction. The first gate structure comprises a first portion that wraps around each of the first plurality of channel layers and a second portion that wraps around each of the second plurality of channel layers. The first dielectric fin structure separates the first and second portions from each other. The first gate structure comprises a third portion that connects the first and second portions to each other and is vertically disposed below the first dielectric fin structure.Type: ApplicationFiled: August 28, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Yao Lin, Chen-Ping Chen, Chen-Yui Yang, Hsiao Wen Lee, Ming-Ching Chang
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Publication number: 20230060825Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Yu Kao, Shih-Yao Lin, Chen-Ping Chen, Chih-Chung Chiu, Chen-Yui Yang, Ke-Chia Tseng, Hsien-Chung Huang, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
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Publication number: 20220237092Abstract: Faults are managed in a virtual machine network. Failure of operation of a virtual machine among a plurality of different types of virtual machines operating in the virtual machine network is detected. The virtual machine network operates on network elements connected by transport mechanisms. A cause of the failure of the operation of the virtual machine is determined, and recovery of the virtual machine is initiated based on the determined cause of the failure.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Inventors: Chen-Yui Yang, Paritosh Bajpay, Chang-Han Jong, Chaoxin Charles Qiu
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Publication number: 20220114065Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: ApplicationFiled: December 21, 2021Publication date: April 14, 2022Inventors: Chen-Yui Yang, Paritosh Bajpay, David H. Lu, Chaoxin Qiu
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Patent number: 11301342Abstract: Faults are managed in a virtual machine network. Failure of operation of a virtual machine among a plurality of different types of virtual machines operating in the virtual machine network is detected. The virtual machine network operates on network elements connected by transport mechanisms. A cause of the failure of the operation of the virtual machine is determined, and recovery of the virtual machine is initiated based on the determined cause of the failure.Type: GrantFiled: October 5, 2020Date of Patent: April 12, 2022Assignee: AT&T Intellectual Property I, L.P.Inventors: Chen-Yui Yang, Paritosh Bajpay, Chang-Han Jong, Chaoxin Charles Qiu
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Patent number: 11237926Abstract: Concepts and technologies are disclosed herein for providing a network virtualization policy management system. An event relating to a service can be detected. A first policy that defines allocation of hardware resources to host the virtual network functions can be obtained, as can a second policy that defines deployment of the virtual network functions to the hardware resources. The hardware resources can be allocated based upon the first policy and the virtual network functions can be deployed to the hardware resources based upon the second policy.Type: GrantFiled: February 3, 2020Date of Patent: February 1, 2022Assignee: Shopify Inc.Inventors: Chen-Yui Yang, Paritosh Bajpay, David H. Lu, Chaoxin Qiu
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Publication number: 20210306222Abstract: Virtual machine server clusters are managed using self-healing and dynamic optimization to achieve closed-loop automation. The technique uses adaptive thresholding to develop actionable quality metrics for benchmarking and anomaly detection. Real-time analytics are used to determine the root cause of KPI violations and to locate impact areas. Self-healing and dynamic optimization rules are able to automatically correct common issues via no-touch automation in which finger-pointing between operations staff is prevalent, resulting in consolidation, flexibility and reduced deployment time.Type: ApplicationFiled: June 14, 2021Publication date: September 30, 2021Inventors: Chen-Yui Yang, David H. Lu, Scott Baker, Anthony M. Srdar, Gabriel Bourge