Abstract: Embodiments of the present disclosure relate to the field of electronic device manufacturing, and in particular, to multi-layered epitaxial stacks, such as complementary field-effect-transistors (cFETs). A method is used to fabricate a layered middle dielectric isolation (MDI) structure and carbon-doping of epitaxially grown silicon germanium layers together in the cFETs. In some embodiments, by integrating the layered MDI structure together with carbon-doping of SiGe layers into the cFETs, relaxation, wafer bow, and defects in a stack have been significantly reduced when compared to traditional stacks. Advantageously, multi-layered epitaxial stacks incorporate a greater number of silicon channels (e.g., pMOS and nMOS channels) when compared to traditional stacks. Furthermore, the selectivity in the downstream processes is improved by an order of magnitude.

Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise a self-aligned low-? inner spacer adjacent to the replacement metal gate. The method includes growing the source/drain epitaxial material without an inner spacer and then forming a low-? inner spacer material after dummy gate removal and nanosheet release.

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

Abstract: Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.

Abstract: A method for forming an anode of a sodium ion battery includes a step of heat treating the red phosphorus precursor and reduced graphene oxide powder at a first temperature that vaporizes the red phosphorus precursor such that red phosphorus structures grow on the reduced graphene oxide powder. Another method for forming an anode of a sodium ion battery includes steps of placing a red phosphorus precursor and a graphene oxide precursor in a reaction chamber; establishing a reducing environment in the reaction chamber; and heating the red phosphorus precursor and a graphene oxide precursor to a first temperature that is sufficient temperature to form a composite of red phosphorus and reduced graphene oxide. Characteristically, red phosphorus deposition and graphene oxide reduction are completed simultaneously in a single-step heat treatment. A method for making a black phosphorus-composite for sodium-ion batter anodes is also provided.

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a fluorine-free metallic tungsten film. The fluorine-free metallic tungsten film is exposed to a second process condition to deposit a tungsten film on the fluorine-free metallic tungsten film.

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

Abstract: A method for forming an anode of a sodium ion battery includes a step of heat treating the red phosphorus precursor and reduced graphene oxide powder at a first temperature that vaporizes the red phosphorus precursor such that red phosphorus structures grow on the reduced graphene oxide powder. Another method for forming an anode of a sodium ion battery includes steps of placing a red phosphorus precursor and a graphene oxide precursor in a reaction chamber; establishing a reducing environment in the reaction chamber; and heating the red phosphorus precursor and a graphene oxide precursor to a first temperature that is sufficient temperature to form a composite of red phosphorus and reduced graphene oxide. Characteristically, red phosphorus deposition and graphene oxide reduction are completed simultaneously in a single-step heat treatment. A method for making a black phosphorus-composite for sodium-ion batter anodes is also provided.