Patents by Inventor Cheng-An Peng

Cheng-An Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10636967
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: April 28, 2020
    Assignee: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • Publication number: 20190334087
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Application
    Filed: July 11, 2019
    Publication date: October 31, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • Publication number: 20170256712
    Abstract: A method for manufacturing an electrode including the following steps is provided. A conductive layer is formed on a base material. A radio frequency physical vapor deposition (RF PVD) transition metal compound layer is formed on the conductive layer by using a RF PVD. A sacrificial layer is formed on the RF PVD transition metal compound layer. A planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer.
    Type: Application
    Filed: September 13, 2016
    Publication date: September 7, 2017
    Applicant: Winbond Electronics Corp.
    Inventors: Yi-Chung Chen, Cheng-An Peng, Shuo-Che Chang, Sung-Ying Wen
  • Patent number: 6736696
    Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: May 18, 2004
    Assignee: ProMOS Technologies Inc.
    Inventors: Cheng-An Peng, Guan-Jiun Yi
  • Publication number: 20030203709
    Abstract: A method of improving uniformity control in chemical mechanical polishing (CMP). A CMP apparatus is provided with at least a platen, a polishing pad disposed on the platen and at least a polishing carrier installed over the platen. The platen rotates in a first rotating direction, and the polishing carrier is used to press a wafer on the polishing pad and drive the wafer to rotate. First, in a first-CMP step, the polishing carrier rotates in a second rotating direction. Then, in a second-CMP step, the polishing carrier rotates in a third rotating direction different from the second rotating direction.
    Type: Application
    Filed: April 30, 2002
    Publication date: October 30, 2003
    Inventors: Cheng-An Peng, Guan-Jiun Yi
  • Patent number: 6478659
    Abstract: A fixed abrasive chemical polishing method uses an aqueous solution that has a variable pH. During polishing the pH of the aqueous solution is changed so that the polishing process can be more precisely controlled. The removal rate and removal selectivity between oxide and nitride can be controlled by varying the pH of the aqueous solution.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: November 12, 2002
    Assignee: Promos Technologies, Inc.
    Inventors: Cheng-An Peng, Jiun-Fang Wang
  • Publication number: 20020072238
    Abstract: A fixed abrasive chemical polishing method uses an aqueous solution that has a variable pH. During polishing the pH of the aqueous solution is changed so that the polishing process can be more precisely controlled. The removal rate and removal selectivity between oxide and nitride can be controlled by varying the pH of the aqueous solution.
    Type: Application
    Filed: December 13, 2000
    Publication date: June 13, 2002
    Inventors: Cheng-An Peng, Jiun-Fang Wang
  • Patent number: 5925576
    Abstract: A plug for plugging selected perforations in a carrier assembly used in a chemical mechanical polishing system for polishing semiconductor wafers is disclosed. The plug comprises a pressure-resistant portion; a bottom portion attached to the pressure-resistant portion; and a leak-resistant portion extending from the pressure-resistant portion, dimensioned to fit snugly into the bottom portion.
    Type: Grant
    Filed: August 19, 1998
    Date of Patent: July 20, 1999
    Assignee: ProMOS Technologies, Inc.
    Inventor: Cheng-An Peng