Patents by Inventor Cheng-Chan Tsai

Cheng-Chan Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240135184
    Abstract: Aspects of the disclosure provide an evolutionary neural architecture search (ENAS) method. For example, the ENAS method can include steps (a) performing one or more evolutionary operations on an initial population of neural architectures to generate offspring neural architectures, (b) evaluating performance of each of the offspring neural architectures to obtain at least one evaluation value of the offspring neural architecture with respect to a performance metric, (c) adjusting the evaluation values of the offspring neural architectures based on at least one constraint on the evaluation values, (d) selecting at least one of the offspring neural architectures as a new population of neural architectures, and (e) outputting the new population of neural architectures as a last population of neural architectures when a stopping criterion is achieved, or (f) iterating steps (a) to (d) with the new population of neural architectures being taken as the initial population of neural architectures.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 25, 2024
    Applicant: MEDIATEK INC.
    Inventors: Yun-Chan TSAI, Min-Fong HORNG, Chia-Hsiang LIU, Cheng-Sheng CHAN, ShengJe HUNG
  • Publication number: 20240079268
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.
    Type: Application
    Filed: November 10, 2023
    Publication date: March 7, 2024
    Inventors: Chih-Hui Huang, Cheng-Hsien Chou, Cheng-Yuan Tsai, Kuo-Ming Wu, Sheng-Chan Li
  • Patent number: 6257854
    Abstract: A double screw rotor assembly includes two screw rotors meshed in a bushing inside a casing. The threads of the screw rotors have a uniform pitch, and define with the bushing a plurality of air chambers in the pitch. The volumes of the air chambers reduce gradually from the inlet toward the output due to the reduce of tooth high so that the outer diameter defined by the tooth tip of the thread of each screw rotor has the shape of an invertedly disposed cone. Adjustable spring means is provided to impart an axial spring force to the bushing relative to the casing, guide means is provided to guide axial movement of the bushing relative to the casing, and a O-ring is disposed between the top wall of the bushing and the casing. Adjusting the pre-loading of the spring means controls the dimension of the clearance between the inside wall of the bushing and the tooth tip of the thread of each screw rotor.
    Type: Grant
    Filed: June 8, 2000
    Date of Patent: July 10, 2001
    Assignee: Industrial Technology Research Institute
    Inventors: Hong-Sheng Fang, Ming-Hsin Liu, Cheng-Chan Tsai
  • Patent number: 6176694
    Abstract: A power-saving, low-noise double screw rotor assembly, which includes a casing and a pair of screw rotors, wherein the casing has an inside wall defining a compression chamber, an inlet port and an outlet port communicating with the compression chamber. The screw rotors are mounted in the compression chamber and meshed together, each having a spiral thread around the periphery. The thread defines an equidistant pitch. The addendum of the thread defines an outside diameter and is abutted against the inside wall of the casing, the dedendum defines a root diameter. A thread height is defined between the addendum of thread and the dedendum of thread, the thread height gradually reduces in direction from the inlet port toward the outlet port. The dedendum of thread and side walls of the thread of each screw rotor define with the inside wall of the casing at least one transfer chamber having a volume gradually reducing in direction from the inlet port toward the outlet port.
    Type: Grant
    Filed: August 12, 1999
    Date of Patent: January 23, 2001
    Assignee: Industrial Technology Research Institute
    Inventors: Hong-Sheng Fang, Zhang-Hua Fong, Hann-Tsong Wang, Cheng-Chan Tsai, Jiun-Hung Chen, Ming-Fong Chen
  • Patent number: 6155502
    Abstract: A nozzle device for purging a vacuum pump includes a nozzle, the top portion of the nozzle is a tapered portion, two sides of the tapered portion are installed with nozzle holes for guiding the exhausted air sub-flow to be exhausted from the two sides of vent end.
    Type: Grant
    Filed: August 23, 1999
    Date of Patent: December 5, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Shinn Liou, Tean-Mu Shen, Cheng-Chan Tsai, Jung-Chen Chien, Tsung-Hsin Lin