Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A near-eye display device, including a substrate, a light-emitting element, an active element, an optical layer, and a light guide structure, is provided. The light-emitting element is located on the substrate and includes a first type semiconductor pattern. The active element is located adjacent to the light-emitting element. A channel layer of the active element and the first type semiconductor pattern of the light-emitting element belong to the same layer. The optical layer covers the light-emitting element and the active element. The light guide structure is located on the optical layer and includes an in-coupling portion and an out-coupling portion, wherein an orthogonal projection of the in-coupling portion on the substrate is overlapped with an orthogonal projection of the light-emitting element on the substrate. A manufacturing method of the near-eye display device is also provided.

Abstract: A display device includes a first image generating unit and a first waveguide glass. The first image generating unit is configured to emit first light. The first waveguide glass faces toward the first image generating unit. The first waveguide glass includes a first microstructure, two second microstructures and a third microstructure. The first microstructure is located between two ends at the same side of the two second microstructures. The third microstructure is located between the two second microstructures. The third microstructure has a first grating and a second grating. An extending direction of the first grating is different from an extending direction of the second grating. The second microstructure is configured to receive the first light of the first image generating unit transmitted through the first microstructure and transmit the first light to the third microstructure.

Abstract: A head-up display includes an image generating unit and a waveguide glass. The waveguide glass faces toward the image generating unit. The waveguide glass includes a first microstructure, a second microstructure and a third microstructure. The first microstructure has a first width. The second microstructure is adjacent to the first microstructure. The third microstructure is adjacent to the second microstructure. The third microstructure has tiling areas adjacent to each other. A gap between the two adjacent tiling areas is less than half of the first width.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A polarizer substrate includes a substrate, a reflective layer, and a metal pattern layer. The reflective layer is located on the substrate and has a transmission area and a reflective area. The metal pattern layer is located on the reflective layer and the substrate. The metal pattern layer includes a polarizer structure and a microstructure. The polarizer structure includes a plurality of grid lines overlapping the transmission area. A thickness of each of the grid lines is 200 nm to 500 nm, a width of each of the grid lines is 30 nm to 70 nm, and a distance between each adjacent two of the grid lines is 30 nm to 70 nm. The microstructure overlaps the reflective area, and a thickness of the microstructure is 20 nm to 500 nm.

Abstract: An active device substrate including a substrate, first metal grid wires, a first transparent conductive layer, a gate insulating layer, a semiconductor layer, a source, and a drain is provided. The first metal grid wires are located on the substrate. The first transparent conductive layer includes a scan line and a gate connected to the scan line. The scan line and/or the gate is directly connected to at least a part of the first metal grid wires. The gate insulating layer is located on the first transparent conductive layer. The semiconductor layer is located on the gate insulating layer and overlapped with the gate. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A polarizer substrate includes a substrate, a reflective layer, and a metal pattern layer. The reflective layer is located on the substrate and has a transmission area and a reflective area. The metal pattern layer is located on the reflective layer and the substrate. The metal pattern layer includes a polarizer structure and a microstructure. The polarizer structure includes a plurality of grid lines overlapping the transmission area. A thickness of each of the grid lines is 200 nm to 500 nm, a width of each of the grid lines is 30 nm to 70 nm, and a distance between each adjacent two of the grid lines is 30 nm to 70 nm. The microstructure overlaps the reflective area, and a thickness of the microstructure is 20 nm to 500 nm.

Abstract: An active device substrate including a substrate, first metal grid wires, a first transparent conductive layer, a gate insulating layer, a semiconductor layer, a source, and a drain is provided. The first metal grid wires are located on the substrate. The first transparent conductive layer includes a scan line and a gate connected to the scan line. The scan line and/or the gate is directly connected to at least a part of the first metal grid wires. The gate insulating layer is located on the first transparent conductive layer. The semiconductor layer is located on the gate insulating layer and overlapped with the gate. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A photosensitive device includes a display panel, a photosensitive element substrate, and a first quarter wave plate. The photosensitive element substrate is located on the back of the display panel. The photosensitive element substrate includes a first substrate, a plurality of first light emitting diodes, a plurality of photosensitive elements, and a first polarizer structure. The first light emitting diodes and the photosensitive elements are located on the first substrate. The first polarizer structure is located on the first light emitting diodes and the photosensitive elements. The first quarter wave plate is located between the first polarizer structure and the display panel.