Abstract: A power supply unit supplies power to a load, and the power supply unit includes a power factor corrector, a DC conversion module, and an isolated conversion module. The power factor corrector is plugged into a first main circuit board and converts an AC power into a DC power. The DC conversion module is plugged into the first main circuit board and converts the DC power into a main power. The isolated conversion module includes a bus capacitor, the bus capacitor is coupled to the DC conversion module through a first power copper bar, and coupled to the power factor corrector through a second power copper bar. The first power copper bar and the second power copper bar are arranged on a side opposite to the first main circuit board, and are arranged in parallel with the first main circuit board.

Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip structure. The method may be performed by forming a plurality of interconnect layers within a first interconnect structure disposed over an upper surface of a first semiconductor substrate. An edge trimming process is performed to remove parts of the first interconnect structure and the first semiconductor substrate along a perimeter of the first semiconductor substrate. The edge trimming process results in the first semiconductor substrate having a recessed surface coupled to the upper surface by way of an interior sidewall disposed directly over the first semiconductor substrate. A dielectric capping structure is formed onto a sidewall of the first interconnect structure after performing the edge trimming process.

Abstract: A power supply device includes a power supply housing having an accommodating space and an accommodating opening, a hybrid wire-to-wire connector structure and a circuit board disposed in the accommodating space. The hybrid wire-to-wire connector structure includes a connecting seat and an adapter seat. The connecting seat has a signal line terminal and a power line terminal. The connecting seat is disposed in the accommodating opening through an annular rib. The adapter seat has a signal conduction end and a power conduction end. The adapter seat has formed a hook corresponding to the annular rib. The connecting seat and the adapter seat are combined through the signal conduction end inserted in the signal line terminal, the power conduction end inserted in the power line terminal and the hook clamped with the annular rib. Therefore, the power and signal connectors are integrated so as to simplify the assembly.

Abstract: A power supply device includes a power supply housing having an accommodating space and an accommodating opening, a hybrid wire-to-wire connector structure and a circuit board disposed in the accommodating space. The hybrid wire-to-wire connector structure includes a connecting seat and an adapter seat. The connecting seat has a signal line terminal and a power line terminal. The connecting seat is disposed in the accommodating opening through an annular rib. The adapter seat has a signal conduction end and a power conduction end. The adapter seat has formed a hook corresponding to the annular rib. The connecting seat and the adapter seat are combined through the signal conduction end inserted in the signal line terminal, the power conduction end inserted in the power line terminal and the hook clamped with the annular rib. Therefore, the power and signal connectors are integrated so as to simplify the assembly.