Abstract: A manufacturing method of an electronic package includes the following steps. A first interfacial dielectric layer is formed to cover sides of multiple first conductive vias and multiple second conductive vias. Multiple chips are directly bonded to the first and second conductive vias. A base dielectric layer is formed to fill a gap between the adjacent chips. A bridge element is directly bonded to the first conductive vias, such that the bridge element partially overlaps the adjacent chips respectively. A second interfacial dielectric layer and multiple third conductive vias are formed on the first interfacial dielectric layer and the bridge element. A redistribution circuit structure is formed on the second interfacial dielectric layer and the third conductive vias. Multiple conductive bumps are formed on the redistribution circuit structure. An electronic package is also provided.

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. A metallic cross-linker is used with the metallic photoresist. The cross-linker comprises a metal core and a plurality of ligands. The ligands may comprise at least one vinyl group or at least one acetylene group; or comprise an acrylate; or comprise a cinnamate; or be unable to participate in a crosslinking reaction. Upon radiation exposure, the ligands separate from the metal core, and the metal core can crosslink, or the ligands may crosslink. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.

Abstract: Pixels in an organic light-emitting diode (OLED) display may be microcavity OLED pixels having optical cavities. The optical cavities may be defined by a partially transparent cathode layer and a reflective anode structure. The anode of the pixels may include both the reflective anode structure and a supplemental anode that is transparent and that is used to tune the thickness of the optical cavity for each pixel. Organic light-emitting diode layers may be formed over the pixels and may have a uniform thickness in each pixel in the display. Pixels may have a conductive spacer between a transparent anode portion and a reflective anode portion, without an intervening dielectric layer. The conductive spacer may be formed from a material such as titanium nitride that is compatible with both anode portions. The transparent anode portions may have varying thicknesses to control the thickness of the optical cavities of the pixels.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A multi-radar based detection device and detection method for a target object are provided. In the detection method, a first detection result corresponding to a first detection space and a second detection result corresponding to a second detection space are received. The first detection space entering a first status is determined in response to the first detection result indicating that the target object in the first detection space moves to an overlapping area between the first detection space and the second detection space. First information is output in response to determining that the first detection space enters the first status. The second detection space entering a second status is determined in response to the second detection result indicating that the target object not in the second detection space appears in the overlapping area. Second information is output in response to determining that the second detection space enters the second status.

Abstract: A system having a Reconfigurable ReflectArray (RRA) structure includes a radiation layer and a control layer. The radiation layer includes at least one P-Intrinsic-N (P-I-N) diode and a plurality of reconfigurable reflective units. At least one part of the reconfigurable reflective units is electrically connected to the at least one P-I-N diode. The control layer includes at least one switch element and at least one control unit. The at least one switch element is electrically connected to the radiation layer. The at least one control unit is electrically connected to the at least one switch element. The number of the reconfigurable reflective units is different from the number of the at least one switch element.

Abstract: The present invention provides a preparation method of pharmaceutical composition for treating chronic stroke, involving injection via brain into the cranium of a patient having chronic stroke for six months or more; the pharmaceutical composition is a suspension at least comprising adipose-derived stem cells treated by cell expansion, an active synergistic component and a growth factor, wherein the expression level of CD34 and CD45 of the adipose-derived stem cells treated by cell expansion is 10% or less, and the expression level of CD90 and CD105 is 90% or more; the active synergistic component is an extracellular vesicle; the growth factor is at least one selected from the group consisting of HGF, G-CSF, Fractalkine, IP-10, EGF, IL-1?, IL-1?, IL-4, IL-5, IL-13, IFN?, TGF? and sCD40L. The present invention overcomes the limitations of previous cell therapy and provides a cell-based preparation that is clinically safe and therapeutically effective for chronic cerebral stroke.

Abstract: An illumination module includes a light source configured to emit an illumination light beam, a reflective light valve disposed on a path of the illumination light beam and configured to form a plurality of pixels, a lens, and an image sensing module. Each pixel is adapted to be switched between a first state and a second state. The pixels in the first state among the pixels are configured to reflect the illumination light beam into an effective light beam. The pixels in the second state among the pixels are configured to reflect the illumination light beam into a complementary light beam. The lens is disposed on a path of the effective light beam and configured to project the effective light beam to an area to be illuminated. The image sensing module is disposed on a path of a complementary light beam from the reflective light valve and configured to sense the complementary light beam.

Abstract: A magnet-guiding switching system includes a lane magnetic field device, a switching controlling module and a route controlling center. As the switching controlling unit informs the magnetic field switching unit to turn on the first switching electromagnets and to turn off the second switching electromagnets according to the driving signal, the vehicle is guided by magnetic fields of the first switching electromagnets to drive from the first section of the first route to the second section along the guiding section; as the switching controlling unit informs the magnetic field switching unit to turn on the second switching electromagnets and to turn off the first switching electromagnets according to the driving signal, the vehicle is guided by magnetic fields of the second switching electromagnets to drive from the first section of the first route to the continuous section of the second route along the switching section.

Abstract: A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.

Abstract: An electronic device includes: a body, including opposite outer and inner surfaces, and a through opening passing through the outer and inner surfaces; a fan, disposed on the outer surface and having an air outlet; a heat sink assembly, disposed at the air outlet and corresponding to the through opening; a first thermal tube, having one end assembled on the heat sink assembly and located on the side of the outer surface; a first heat source, disposed corresponding to the other end of the first thermal tube; a thermal plate, disposed in the body and corresponding to the through opening, having one side abutting against the heat sink assembly and the inner surface; a second thermal tube, having one end connected to the other side of the thermal plate; and a second heat source, disposed corresponding to the other end of the second thermal tube.

Abstract: Disclosed herein is a drug complex having a synthetic peptide, which has an amino acid sequence of SEQ ID: NO.1; a metal chelator coupled to the synthetic peptide; and a peptide chain disposed between the synthetic peptide and the metal chelator, wherein the peptide chain is composed of plural glutamate molecules.

Abstract: A semiconductor device includes two source/drain regions, two isolation elements, a channel feature, at least one semiconductor layer and a gate feature. The source/drain regions are spaced apart from each other, and are respectively disposed above the isolation elements. The channel feature includes at least one effective channel layer and at least one dummy channel layer that are spaced apart from each other. Each of the at least one effective channel layer extends between the source/drain regions. Each of the at least one dummy channel layer extends between the isolation elements. The at least one semiconductor layer at least covers a lower surface of a bottommost one of the at least one dummy channel layer. The gate feature is disposed around the at least one effective channel layer, such that two opposite surfaces of each of the at least one effective channel layer are adjacent to the gate feature.

Abstract: This document describes systems and techniques directed at extending touch-sensitive regions in electronic devices. In aspects, an electronic device includes a cover layer, a touch sensor panel, and an electronic visual display panel (“display panel”). The cover layer includes a top face and a side face. The touch sensor panel has a first sensing region corresponding to a surface of the top face and a second sensing region at least partially corresponding to a second surface of the side face. The display panel has an active area corresponding at least partially to the first surface of the top face. The active area of the touch sensor panel is greater than an active area of the display panel. Despite the display panel and the touch sensor panel having different active area sizes, an integrated circuit is configured to control both of them, maximizing an internal volumetric efficiency.

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. Multiple different additive types are described for use with the metallic photoresist. The additives can be applied to the photoresist as part of existing solutions, or applied as an ingredient in a treatment solution during various steps for applying, patterning, and developing the metallic photoresist. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.

Abstract: A piezoelectric speaker includes: a peripheral rectangular frame having four sides; a central rectangular frame disposed on the peripheral rectangular frame, wherein the central rectangular frame has four corners and four sides, and the four corners are connected to the four sides of the peripheral rectangular frame; four central triangular cantilevers disposed within the central rectangular frame, wherein each of the central triangular cantilevers has a vibrating end and a fixed end opposite to the vibrating end, and each of the fixed ends of the central triangular cantilevers is connected to the four sides of the central rectangular frame, the four vibrating ends of the four central triangular cantilevers are close to each other, and the four central triangular cantilevers have different dimensions of their respective areas defined within the central rectangular frame; and four peripheral triangular cantilevers disposed between the peripheral rectangular frame and the central rectangular frame.

Abstract: An object detection device and a confidence threshold method adjustment method are provided. The object detection device includes an optical camera, multiple sensors, and a processor. The optical camera and sensors are used to respectively capture a real-time video and environmental value of a detection area. The processor performs an object recognition model and at least one second recognition model. The object recognition model determines whether an object exists in the detection area based on the real-time video to generate a first recognition result and a corresponding first confidence value. The at least one second recognition model generates a second result based on the environmental value respectively. The processor dynamically adjusts a confidence threshold value based on a value of the second result and a correlation degree between the object and the second result.

Abstract: The present invention provides a piezoelectric speaker, including: a frame; a cantilever plate actuator disposed on the frame; a spring connected to the frame and the cantilever plate actuator; and a central diaphragm connected to the spring, wherein when the cantilever plate actuator vibrates, the central diaphragm vibrates with the spring.

Abstract: In a semiconductor package having a redistribution structure, two or more semiconductor dies are connected to a first side of the redistribution structure and an encapsulant surrounds the two or more semiconductor dies. An integrated passive device (IPD) is connected on a second side of the redistribution structure. The second side is opposite to the first side and the IPD is electrically coupled to the redistribution structure. An interconnect device is connected on the second side of the redistribution structure and is electrically coupled to the redistribution structure. Two or more external connections are on the second side of the redistribution structure and are electrically coupled to the redistribution structure.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The method includes forming a metal gate stack wrapped around multiple semiconductor nanostructures, and the semiconductor nanostructures are adjacent to an epitaxial structure. The method also includes forming a dielectric layer over the metal gate stack and the epitaxial structure and partially removing the dielectric layer to form a contact opening exposing the epitaxial structure. The method further includes forming a first protective layer over sidewalls of the contact opening and forming a second protective layer over the first protective layer. The first protective layer has a lower dielectric constant than that of the second protective layer. In addition, the method includes forming a conductive contact over the second protective layer and the epitaxial structure to fill the contact opening.