Abstract: A ring of an edge ring assembly for an etching system and methods of using the ring are described. In some embodiments, the ring includes a top portion including a side surface defining an opening sized to receive a center portion of a substrate support supporting a semiconductor wafer, and the top portion has a first constant thickness. The ring further includes a bottom portion integrally connected to the top portion, and the bottom portion has a second constant thickness that is about 15 percent to about 115 percent of the first constant thickness.

Abstract: An electronic package and a manufacturing method thereof are provided, in which an electronic element is disposed on a carrier structure, then a cladding layer is formed to cover the electronic element, and a shielding layer is formed on the cladding layer to cover the electronic element. The cladding layer is bonded to a shielding structure, and the shielding structure is located between the shielding layer and the electronic element, so as to prevent the electronic element from being subjected to external electromagnetic interference via multiple shielding mechanisms of the shielding structure and the shielding layer.

Abstract: A circuit includes one or more functional circuits, and a clock generation circuit operatively coupled to the one or more functional circuits. The clock generation circuit is configured to: receive a control signal to switch the one or more functional circuits between a first operation mode and a second operation mode; receive a first clock signal and a second clock signal corresponding to the first operation mode and the second operation mode, respectively; and output, to the one or more functional circuits, a clock pulse signal based on either the first clock signal or the second clock signal. The clock generation circuit is configured to generate either a first conduction path to output the clock pulse signal or a second conduction path to output the clock pulse signal. Each of the first and second conduction paths includes a predefined number of gate delays.

Abstract: An integrated circuit (IC) with conductive structures and a method of fabricating the IC are disclosed. The method includes depositing a first dielectric layer on a semiconductor device, forming a conductive structure in the first dielectric layer, removing a portion of the first dielectric layer to expose a sidewall of the conductive structure, forming a barrier structure surrounding the sidewall of the conductive structure, depositing a conductive layer on the barrier structure, and performing a polishing process on the barrier structure and the conductive layer.

Abstract: A semiconductor device includes a 2-D material channel layer, a gate structure, and source/drain electrodes. The gate structure is over a channel region of the 2-D material channel layer. The source/drain electrodes are over source/drain regions of the 2-D material channel layer, respectively. Each of the source/drain electrodes includes a 2-D material electrode and a metal electrode. The 2-D material electrode is below a bottom surface of a corresponding one of the source/drain regions of the 2-D material channel layer. The metal electrode is over a top surface of the corresponding one of the source/drain regions of the 2-D material channel layer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a channel layer and source/drain electrodes. The first dielectric layer is over the substrate. The channel layer is over the first dielectric layer. Source/drain electrodes are over the channel layer. The source/drain electrodes comprise a 2D semimetal material. The channel layer comprises a 2D semiconductor material interfacing the 2D semimetal material of the source/drain electrodes.

Abstract: An aromatic liquid crystal polyester, having repeating units represented by formulae (1) and (2), respectively: where R?, Ar1, Ar2, Ar3, X, Y1, Y2 and Z are those as defined in the specification. Also, a liquid crystal polyester composition including the aromatic liquid crystal polyester and a solvent. The composition has an improved viscosity stability. Also, a liquid crystal polyester film prepared from the liquid crystal polyester composition and a method for manufacturing the same. The liquid crystal polyester film has excellent properties such as a low hygroscopicity and a low dissipation factor (Df).

Abstract: A computing system may access first alpha values associated with first pixels in a first pixel region of an image and determine a bit budget for encoding the first alpha values. The computing system may then select a first alpha-encoding mode for the first alpha values to reflect a determination that the first alpha values are all fully transparent or all fully opaque, and encode the first alpha values by storing the selected first alpha-encoding mode as part of a metadata without using the bit budget to encode the first alpha values individually. The computing system may then update a record of unallocated bits available for allocation based on the bit budget unused in the encoding of the first alpha values, and allocate, based on the record of unallocated bits, bits to encode a set of alpha values different from the first alpha values.

Abstract: A memory circuit includes a plurality of bitcells coupled to a plurality of bitlines, a plurality of wordlines, a plurality of source lines, and a control line. A first of the bitcells and a second of the bitcells are coupled to a first of the bitlines. The first bitcell is coupled to a first of the source lines. The second bitcell is coupled to a second of the source lines. The first source line is different from the second source line.

Abstract: Provided is a filter, including a substrate layer and a near-infrared absorption layer on the substrate layer, wherein the near-infrared absorption layer includes a copper complex formed from a copper compound for supplying copper ion, phosphonric acid represented by formula 1 herein, and at least one phosphorus-containing compound represented by formulas 2 to 4 herein, wherein the OD value of the filter for the incident light wavelength from 930-950 nm is greater than 4. In the present disclosure, by setting a specific near-infrared absorption layer on the filter, the filter is able to efficiently absorb near-infrared and exhibit excellent visible light transmittance, and the burden of film post-processing can be reduced.

Abstract: Provided is an ultraviolet-absorbing resin composition, including 35 to 45 wt % of a fluorocarbon resin, 5 to 25 wt % of an isocyanate curing agent, 1 to 5 wt % of an ultraviolet absorbent, and a residual solvent accounting for the balance, based on the total weight of the ultraviolet-absorbing resin composition. Provided is also an ultraviolet-absorbing resin, an ultraviolet-absorbing structure including the same, and the method for preparing the same. The present disclosure obtains an ultraviolet-absorbing resin with a specific composition from a specific resin composition formula, and the ultraviolet-absorbing resin efficiently absorbs ultraviolet and has excellent visible light transmittance, as well as high stability.

Abstract: A micro-structure film and a light emitting module are disclosed. A plurality of micro-structures with at least one predefined shape are uniformly distributed on at least one of surfaces of two opposite sides of the micro-structure film. The light emitting module includes a substrate, a plurality of light sources, and a package layer. The substrate has a first surface. The plurality of light sources are arranged on the first surface. The package layer is arranged on the first surface to contact with and cover the light sources. A plurality of micro-structures with at least one predefined shape are uniformly distributed on an other side of the package layer opposite to the first surface.

Abstract: A method includes forming a first active fin structure and a second active fin structure on a substrate. A dummy fin structure is formed on the substrate, the dummy fin structure being interposed between the first active fin structure and the second active fin structure. The dummy fin structure is removed to expose a first portion of the substrate, the first portion of the substrate being disposed directly below the dummy fin structure. A plurality of protruding features is formed on the first portion of the substrate. A shallow trench isolation (STI) region is formed over the first portion of the substrate, the STI region covering the plurality of protruding features, at least a portion of the first active fin structure and at least a portion of the second active fin structure extending above a topmost surface of the STI region.

Abstract: An illustrative snapshot management accesses data representative of a set of snapshot rules defining various separate snapshot requirements that collectively specify a first set of snapshots of a dataset, determines, based on at least one flexibility in the various separate snapshot requirements defined by the set of snapshot rules, a second set of snapshots of the dataset that satisfy the various separate snapshot requirements, wherein the second set of snapshots is different from the first set of snapshots, and generates the second set of snapshots of the dataset.

Abstract: Provided are a composite photosensitive element and a method for preparing a composite photosensitive element, and the composite photosensitive element includes a photosensitive element and a near-infrared absorption layer pasted on the photosensitive element, wherein the near-infrared absorption layer includes a copper complex, and the copper complex is formed from a copper compound providing copper ions, phosphoric acid represented by formula 1 herein, and at least one phosphorus-containing compound represented by formulas 2 to 4 herein, wherein the OD value of the near-infrared absorption layer for the incident light wavelength from 930-950 nm is greater than 4. The present disclosure forms a filtering film directly on the photosensitive element instead of using a traditional filter assembly to reduce the size of the assembled product. The filtering film can be further processed and shaped to have functions of micro-lens.

Abstract: Provided is a filter lens and a method for preparing the filter lens. The filter lens includes a copper complex, wherein the copper complex is formed from a copper compound providing copper ions, phosphoric acid represented by formula 1 herein, and at least one phosphorus-containing compound represented by formulas 2 to 4 herein, wherein the OD value of the filter lens for the incident light wavelength of 930 nm to 950 nm is greater than 4. The present disclosure enables a filter lens to have the function of filtering out near-infrared instead of using a traditional filter component and thus the size of the assembled optical lens module is reduced. The filter lens can further filter out light having other specific wavelengths, and thereby the number of lenses in the assembled optical lens module is reduced.

Abstract: Provided is a lens module with an integrated structure, including a first lens and a second lens, a first substrate and a second substrate, an optical bonding layer, a first absorption layer and a second absorption layer, wherein the first absorption layer includes a copper complex, which is formed from a copper compound, a phosphonic acid represented by formula 1 herein, and at least one phosphorus-containing compound represented by formulas 2 to 4 herein. Due to the integrated structure, the lens module can be reduced in size. The manufacturing process is simplified because no assembly process is required. The lens module of the present disclosure exhibits high transmittance for visible light and low transmittance for near-infrared, showing an excellent near-infrared cut-off effect. In addition, while the incident light irradiates the lens module at different angles, the transmittance curve only is slightly shifted.

Abstract: An integrated circuit includes a substrate, at least one n-type semiconductor device, and at least one p-type semiconductor device. The n-type semiconductor device is present on the substrate. The n-type semiconductor device includes a gate structure having a bottom surface and at least one sidewall. The bottom surface of the gate structure of the n-type semiconductor device and the sidewall of the gate structure of the n-type semiconductor device intersect to form an interior angle. The p-type semiconductor device is present on the substrate. The p-type semiconductor device includes a gate structure having a bottom surface and at least one sidewall. The bottom surface of the gate structure of the p-type semiconductor device and the sidewall of the gate structure of the p-type semiconductor device intersect to form an interior angle smaller than the interior angle of the gate structure of the n-type semiconductor device.

Abstract: A method of controlling a feedback control system of a semiconductor process chemical fluid in a storage tank includes performing a fluid quality measurement of fluid by a spectrum analyzer positioned adjacent to a dispensing port of the storage tank, and determining whether a variation in fluid quality measurement of the fluid is within an acceptable range. The method further includes in response to a variation in fluid quality measurement that is not within the acceptable range of variation in fluid quality measurement, automatically adjusting a configurable parameter of the semiconductor process chemical fluid in the storage tank to set the variation in fluid quality measurement of the fluid within the acceptable range.

Abstract: An optical structure is provided. The optical structure includes a substrate and a light-emitting element disposed on the substrate. The optical structure also includes a cap disposed on the substrate and covering the light-emitting element. The cap has a top portion and a sidewall connected to the top portion. The optical structure further includes a first micro-structure disposed on a first side of the top portion facing the light-emitting element. The first micro-structure is periodically arranged.