Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes providing a substrate for an interposer, and forming a conductive interconnect structure in and on the substrate for connecting a group of selected IC dies. The method includes forming warpage-reducing trenches in non-routing regions of the interposer, wherein the warpage-reducing trenches are sized and positioned based on a warpage characteristic to reduce the warpage of the chip package structure. The method also includes depositing a warpage-relief material in the warpage-reducing trenches according to the warpage characteristic to reduce the warpage of the chip package structure, and bonding the group of selected IC dies to the interposer to form a chip package structure.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A solar control film with improved moisture resistance function is provided. The solar control film includes a flexible substrate, at least one infrared-reflective composite layer and an outer dielectric layer. The infrared-reflective composite layer includes a dielectric sublayer and a metal sublayer. The dielectric sublayer is disposed on the flexible substrate, and the material of the dielectric sublayer includes TiO2. The metal sublayer is disposed on the dielectric sublayer, and includes 8.3-16.4 atomic % Ag, 0.5-1.0 atomic % Ti, 81.0-90.9 atomic % N, and 0.3-0.6 atomic % noble metal, and the noble metal is Au, Pd or any combinations thereof. The outer dielectric layer is disposed on the infrared-reflective composite layer, and the material of the outer dielectric layer includes TiO2. In this way, the provided solar control film can effectively suppress of forming white spots without significantly sacrificing its original function and characteristics.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A solar control film with improved moisture resistance function is provided. The solar control film includes a flexible substrate, at least one infrared-reflective composite layer and an outer dielectric layer. The infrared-reflective composite layer includes a dielectric sublayer and a metal sublayer. The dielectric sublayer is disposed on the flexible substrate, and the material of the dielectric sublayer includes TiO2. The metal sublayer is disposed on the dielectric sublayer, and includes 8.3-16.4 atomic % Ag, 0.5-1.0 atomic % Ti, 81.0-90.9 atomic % N, and 0.3-0.6 atomic % noble metal, and the noble metal is Au, Pd or any combinations thereof. The outer dielectric layer is disposed on the infrared-reflective composite layer, and the material of the outer dielectric layer includes TiO2. In this way, the provided solar control film can effectively suppress of forming white spots without significantly sacrificing its original function and characteristics.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.

Abstract: The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced.

Abstract: A method for manufacturing a solar control film includes: a step of applying an arc-plasma coating process to deposit a first dielectric layer on a soft substrate, the first dielectric layer containing Ti; a step of depositing a first metal layer on the first dielectric layer; a step of applying the arc-plasma coating process to deposit a second dielectric layer on the first metal layer, the second dielectric layer containing the Ti; a step of depositing a second metal layer on the second dielectric layer; and, a step of applying the arc-plasma coating process to deposit a third dielectric layer on the second metal layer, the third dielectric layer containing the Ti. In addition, a solar control film is also provided.

Abstract: A method for measuring a thickness of a thin film includes: a step of basing on a training database to establish an artificial neural network, the training database including a plurality of modified spectra and a plurality of film thicknesses corresponding individually to the plurality of modified spectra; a step of measuring a sample having a coated film so as to obtain a spectrum; and, a step of running the artificial neural network already trained by the plurality of modified spectra so as to use the spectrum to estimate a thickness of the coated film on the sample. In addition, a system related to the method for measuring a thickness of a thin film is provided to include a measuring unit, a spectrometer and a processing unit.

Abstract: The present invention discloses a method for fabricating an electrochromic device, which adopts the vacuum cathodic arc-plasma deposition to comprise five layers with an ionic conduction layer (electrolyte) in contact with an electrochromic (EC) layer and an ion storage (complementary) layer, all sandwiched between two transparent conducting layers sequentially on a substrate. The method owns superior deposition efficiency and the fabricated thin film structures have higher crystalline homogeneity. In addition, thanks to the nanometer pores in the thin film structures, the electric capacity as well as the ion mobility are greater. Consequently, the reaction efficiency for bleaching or coloring is enhanced.

Abstract: A vacuum coating apparatus includes at least a chamber, an arc discharge plasma source, a feeding-reeling unit, and a roller set. The first and second openings are connecting with the feeding or reeling unit so as to allow the substrate to enter and leave the chamber therethrough, respectively. The arc discharge plasma source located inside the chamber generates the plasma, which discharges radially from the arc discharge plasma source as its center. The roller set includes a plurality of the first rollers, which are located in the chamber and enclosing the arc discharge plasma source. A first surface of the substrate is facing the plurality of the first rollers and contacts tightly on the periphery of the first rollers so that the first rollers can rotate by the moving of the substrate. The material evaporated and emitted by the plasma is attached onto the first surface of the substrate.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A high frequency plasma apparatus includes a reaction chamber, a first electrode, a second electrode, and a plurality of feed points located at one of the two electrodes at least. The feed points are used to simultaneously generate a first standing wave and a second standing wave, with different temporal and spatial patterns. By adjusting amplitudes of the two standing waves and the temporal and spatial phase differences between the two standing waves appropriately, plasma uniformity of the high frequency plasma apparatus can be effectively improved.

Abstract: The present invention relates to a roll-to-roll hybrid plasma modular coating system, which comprises: at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit, a metallic film and at least one substrate feeding unit. Each of the arc plasma processing unit is formed with a first chamber and an arc plasma source. Each of the magnetron sputtering plasma processing unit is formed with a second chamber and at least one magnetron sputtering plasma source. The metallic film is disposed in the arc plasma processing unit to avoid chamber wall being deposited by the arc plasma source; There are at least one arc plasma processing unit, at least one magnetron sputtering plasma processing unit and at least one winding/unwinding unit connected in series to lay at least one thin layer by arc plasma deposition or by magnetron sputtering plasma onto substrate material.

Abstract: A large-area plasma generating apparatus is disclosed, which includes a reaction chamber; a first electrode disposed in the reaction chamber; a second electrode parallel with the first electrode and disposed in the reaction chamber; and a discharge region formed between the first and second electrodes and a plasma can be formed therein; wherein a travelling wave or a traveling-wave-like electromagnetic field is generated via at least one of the first and second electrodes and travels from one end of the discharge region to its opposite end, so as to uniform the plasma in the discharge region.