Abstract: In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.

Abstract: A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.

Abstract: A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.

Abstract: A method for in-situ removing photoresist material. An etching process for patterning a passivation layer of a CMOS photosensor is performed on an etching machine. Oxygen is in-situ used to remove the parched photoresist material. The etching process and the in-situ O2 process are performed, for example, on a Tegal-903 etching machine. The Tegal-903 has better stability than an Asher etching machine for removing the parched photoresist material using oxygen plasma. A stable etching rate is thus obtained to prevent the acrylic material layer from being damaged by over-etching and to prevent the photoresist material from remaining.