Patents by Inventor Cheng-Chen Huseh

Cheng-Chen Huseh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and method for forming a passivation layer thereon
    Patent number: 7157360
    Abstract: A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.
    Type: Grant
    Filed: September 29, 2003
    Date of Patent: January 2, 2007
    Assignee: Macronix International Co., Ltd.
    Inventors: Hung-Yu Chiu, U-Way Tseng, Wen-Pin Lu, Cheng-Chen Huseh, Pei-Ren Jeng, Fu-Hsiang Hsu
  • Memory device and method for forming a passivation layer thereon
    Patent number: 6867466
    Abstract: A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.
    Type: Grant
    Filed: September 13, 2002
    Date of Patent: March 15, 2005
    Assignee: Macronix International Co., Ltd.
    Inventors: Hung-Yu Chiu, U-Way Tseng, Wen-Pin Lu, Cheng-Chen Huseh, Pei-Ren Jeng, Fu-Hsiang Hsu
  • Memory device and method for forming a passivation layer thereon
    Publication number: 20040056360
    Abstract: A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.
    Type: Application
    Filed: September 29, 2003
    Publication date: March 25, 2004
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Hung-Yu Chiu, U-Way Tseng, Wen-Pin Lu, Cheng-Chen Huseh, Pei-Ren Jeng, Fu-Hsiang Hsu
  • Memory device and method for forming a passivation layer thereon
    Publication number: 20030173670
    Abstract: A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the semiconductor substrate to connect with the memory units, and a passivation structure over the surface of the interconnect structure. The passivation structure comprises a dielectric layer over the surface of the interconnect structure and a silicon-oxy-nitride (SiOxNy) layer over the surface of the dielectric layer.
    Type: Application
    Filed: September 13, 2002
    Publication date: September 18, 2003
    Inventors: Hung-Yu Chiu, U-Way Tseng, Wen-Pin Lu, Cheng-Chen Huseh, Pei-Ren Jeng, Fu-Hsiang Hsu