Patents by Inventor Cheng-Cheng Kuo

Cheng-Cheng Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240288489
    Abstract: The present disclosure provides a wafer. The wafer includes a die, a scribe line adjacent to the die, and a test circuit adjacent to the scribe line. The test circuit includes a first switch configured to simultaneously couple a first DUT of a first set of DUTs arranged in a first column and a second DUT of a second set of DUTs arranged in a second column to a signal supply node. The test circuit includes a second switch configured to simultaneously couple the first DUT and the second DUT to a signal receive node. The second switch has a node directly coupled to the first DUT, the second DUT, and the first switch. There is no switch connected between the first DUT and the second DUT.
    Type: Application
    Filed: May 6, 2024
    Publication date: August 29, 2024
    Inventors: CHIA-WEI HUANG, WEI-JHIH WANG, CHENG-CHENG KUO, YUAN-YAO CHANG
  • Patent number: 12007431
    Abstract: The present disclosure provides a wafer. The wafer includes a die, a scribe line adjacent to the die, and a test circuit adjacent to the scribe line. The test circuit includes a first switch, a second switch, and a third switch. The first switch has a first node coupled to a first device-under-test and a second node coupled to a first signal supply node. The second switch has a first node coupled to the second DUT and a second node coupled to the first signal supply node. The third switch has a first node directly coupled to the first DUT and the second DUT. The third switch has a second node coupled to a second signal supply node. The third switch selectively couples both of the first DUT and the second DUT to the second signal supply node.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia-Wei Huang, Wei-Jhih Wang, Cheng-Cheng Kuo, Yuan-Yao Chang
  • Patent number: 11990531
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hay-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Publication number: 20230066905
    Abstract: The present disclosure provides a wafer. The wafer includes a die, a scribe line adjacent to the die, and a test circuit adjacent to the scribe line. The test circuit includes a first switch, a second switch, and a third switch. The first switch has a first node coupled to a first device-under-test and a second node coupled to a first signal supply node. The second switch has a first node coupled to the second DUT and a second node coupled to the first signal supply node. The third switch has a first node directly coupled to the first DUT and the second DUT. The third switch has a second node coupled to a second signal supply node. The third switch selectively couples both of the first DUT and the second DUT to the second signal supply node.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: CHIA-WEI HUANG, WEI-JHIH WANG, CHENG-CHENG KUO, YUAN-YAO CHANG
  • Patent number: 11392745
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: July 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20210296471
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 23, 2021
    Inventors: Harry-Hay-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Patent number: 11011621
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Publication number: 20210089697
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 25, 2021
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Patent number: 10853552
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: December 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20200020788
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Patent number: 10490654
    Abstract: Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends vertically from a substrate. A drain region is in a bottommost portion of the protrusion. A source region is in a topmost portion of the protrusion. A gate stack that wraps a middle portion of the protrusion. The gate stack further wraps around a portion of the source region and a portion of the drain region. Spacers are along a portion of the topmost portion of the protrusion. The TFET further includes a drain contact coupled to the drain region, a gate contact coupled to the gate stack, and a source contact coupled to the source region. The source contact has a width that is greater than a width of the source region. The source contact is disposed on the source region and a portion of the spacers.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: November 26, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Chi-Wen Liu, Ming Zhu
  • Patent number: 10424652
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: September 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Publication number: 20190258770
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: May 6, 2019
    Publication date: August 22, 2019
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Patent number: 10282504
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20190123184
    Abstract: Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends vertically from a substrate. A drain region is in a bottommost portion of the protrusion. A source region is in a topmost portion of the protrusion. A gate stack that wraps a middle portion of the protrusion. The gate stack further wraps around a portion of the source region and a portion of the drain region. Spacers are along a portion of the topmost portion of the protrusion. The TFET further includes a drain contact coupled to the drain region, a gate contact coupled to the gate stack, and a source contact coupled to the source region. The source contact has a width that is greater than a width of the source region. The source contact is disposed on the source region and a portion of the spacers.
    Type: Application
    Filed: December 20, 2018
    Publication date: April 25, 2019
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Chi-Wen Liu, Ming Zhu
  • Patent number: 10164076
    Abstract: A method for forming a tunneling field-effect transistor (TFET) is disclosed. The method includes etching a semiconductor substrate to form a semiconductor protrusion that protrudes out from a top surface of the semiconductor substrate, forming a drain region in lower portion of the semiconductor protrusion, and patterning a gate stack layer to form a gate stack. The gate stack has a gating surface that directly contacts and wraps around a middle portion of the semiconductor protrusion. The method further includes forming a source region in an upper portion of the semiconductor protrusion and forming a source contact over the source region, the source contact have a first width that is larger than a width of the source region.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Chi-Wen Liu, Ming Zhu
  • Patent number: 10026656
    Abstract: A semiconductor die comprises two or more active regions over a substrate. A first set of dummy blocks are over the substrate, in contact with one another, and completely surrounding at least one of the two or more active regions. A second set of dummy blocks are over the substrate and farther from the at least one active region surrounded by the first set of dummy blocks than the dummy blocks of the first set of dummy blocks. Each of the dummy blocks of the first set of dummy blocks has individual surface areas, each of the dummy blocks of the second set of dummy blocks has individual surface areas, and the individual surface areas of each of the dummy blocks of the second set of dummy blocks is larger than the individual surface areas of each of the dummy blocks of the first set of dummy blocks.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: July 17, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo
  • Publication number: 20180096090
    Abstract: A method of manufacturing an integrated circuit (IC) includes receiving a layout of the IC having a first region interposed between two second regions. The layout includes a first layer having first features and second and third layer having second and third features in the first region. The second and third features collectively form cut patterns for the first features. The method further includes modifying the second and third features by a mask house tool, resulting in modified second and third features, which collectively form modified cut patterns for the first features. The modifying of the second and third features meets at least one of following conditions: total spacing between adjacent modified second (third) features is greater than total spacing between adjacent second (third) features, and total length of the modified second (third) features is smaller than total length of the second (third) features.
    Type: Application
    Filed: January 20, 2017
    Publication date: April 5, 2018
    Inventors: Yun-Lin Wu, Cheng-Cheng Kuo, Chia-Ping Chiang, Chih-Wei Hsu, Hua-Tai Lin, Kuei-Shun Chen, Yuan-Hsiang Lung, Yan-Tso Tsai
  • Publication number: 20180069096
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features are formed on the substrate. A drain region is disposed over the substrate adjacent to the protrusion structure and extends to a bottom portion of the protrusion structure as a raised drain region. A drain contact is disposed over the drain region and overlap with the isolation feature.
    Type: Application
    Filed: October 30, 2017
    Publication date: March 8, 2018
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Ming Zhu
  • Patent number: 9853125
    Abstract: A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. A drain region is disposed over the substrate adjacent to the frustoconical protrusion structure and extends to a bottom portion of the frustoconical protrusion structure as a raised drain region. A gate stack is disposed over the substrate. The gate stack has a planar portion, which is parallel to the surface of substrate and a gating surface, which wraps around a middle portion of the frustoconical protrusion structure, including overlapping with the raised drain region. An isolation dielectric layer is disposed between the planar portion of the gate stack and the drain region. A source region is disposed as a top portion of the frustoconical protrusion structure, including overlapping with a top portion of the gating surface of the gate stack.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: December 26, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Cheng-Cheng Kuo, Chi-Wen Liu, Ming Zhu